• Title/Summary/Keyword: 이온주입범위

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Thermal Effusion of Implanted Inert Gas Ions from Si(100) (Si(100)에 주입된 불활성 기체 이온들의 방출 특성)

  • Jo Sam K.
    • Journal of the Korean Vacuum Society
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    • v.15 no.1
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    • pp.73-80
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    • 2006
  • Thermally-driven effusion of inert gases out from Si(100), into which energetic $\~l keV\;He^+,\;Ne^+,\;A^r+,\;and\;Kr^+ ions$ had been implanted at a moderate substrate temperatures of $\~400 K$, was investigated by means of temperature-programmed desorption (TPD) mass spectrometry. While He effused out broadly over $500\~1,100 K$, Ne, Ar, and Kr effusion occurred sharply at 810, 860, and 875 K, respectively. Hydrogen adsorption/desorption analysis for the ion-treated Si(100) surfaces indicated minimal to severe damage by ions with increasing mass from He to Kr. Implications of these results in light of literature reports are discussed.

Crystal Growth of rutiles doped with Impurity Ions by Floating Zone Method (부유대용융법에 의한 불순이온 주입된 $TiO_2$단결정 성장 연구)

  • 이성영;유영문;김병호
    • Proceedings of the Korea Crystallographic Association Conference
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    • 1999.04a
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    • pp.1-1
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    • 1999
  • 부유대용융법에 의하여 불순이온의 종류와 각 이온의 주입 농도를 달리하는 Rutile 단결정을 성장하였다. 성장된 결정으로부터 제조한 박편시료를 이용하여 결정결함과 광투과도에 미치는 각 불순이온의 영향을 조사하였다. 결정성장용 주원료로 99.99%의 TiO2를 사용하고, 불순이온 주입을 위한 원료로서 99.99%의 Al2O3, H3BO3, Ga2O3, Sc2O3, V2O5, Fe2O3, ZrO2, Er2O3, Cr2O3를 각각 사용하였다. 불순이온의 종류에 따르는 영향을 조사하기 위하여 TiO2 99.8 atomic%-불순이온 0.2atomic%의 조성이 되도록 각 이온별로 원료를 정밀하게 평량하고 균일 혼합하였다. 불순 이온의 첨가량에 따르는 영향을 조사하기 위하여 Al2O3는 각각 pure, 0.2, 0.4, 0.6 atomic%를, Cr2O3는 pure, 0.003, 0.05, 0.2 atomic%를 각각 치환하여 원료를 조합하였다. 균일 혼합된 원료를 직경 8mm의 고무 튜브에 넣고 CIP(Cold Isostatic Press0에서 2000kg/$\textrm{cm}^2$의 압력으로 성형한 후 150$0^{\circ}C$에서 1시간 소결함으로서 결정성장용 다결정 원료를 합성하였다. 합성된 다결정을 double ellipsoidal mirror 내에 설치하고,halogen lamp로 가열하여 원료의 한쪽 끝을 용융한 다음, 20rpm의 회전속도, 3-5mm/hr의 성장속도로 하는 유속 1$\ell$/min의 O2 분위기속에서 부유대용융법에 의하여 결정을 성장하였다. 성장된 결정을 성장축에 수직한 방향으로 각각 절단, 연삭, 연마한 박편을 이용하여 편광하에서 low-angle grain boundaries 및 기타의 결정결함을 관찰하였으며, 0.3$\mu\textrm{m}$~0.8$\mu\textrm{m}$ 범위 및 0.6$\mu\textrm{m}$~3.4$\mu\textrm{m}$ 범위에서의 투과 및 흡수 스펙트럼을 측정하였다. 결정 성장 결과 B3+, Er3+, Cr3+ 이온은 Ti4+ 이온과 이온의 크기 차이가 심하여 결정의 정상적인 성장을 방해하는 물성을 나타냈고, V5+, Cr3+ 이온은 흑색의 결정, Fe3+ 이온은 적갈색의 결정으로 성장되었다. Al3+, Zr4+, Al3+의 순서로 투과도가 높아지는 것이 관찰되었다. 불순이온의 농도에 따른 영향으로서 Al3+ 이온의 경우 주입농도가 높아질수록 low angle boundary와 oxygen deficiency가 감소하였고, 투과율은 조금 감소하거나 큰 차이가 없는 것으로 나타났다. 반면에 Cr3+ 이온을 주입한 경우 0.003 atomic%에서 최적의 물성을 보였으며, 주입농도가 높아질수록 결정성장이 어려워지고 광의 투과도가 급격히 저하되었다.

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Deviation of Threshold Voltage and Conduction Path for the Ratio of Top and Bottom Oxide Thickness of Asymmetric Double Gate MOSFET (비대칭 DGMOSFET의 상하단 산화막 두께비에 따른 문턱전압 및 전도중심의 변화)

  • Jung, Hakkee
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2014.10a
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    • pp.765-768
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    • 2014
  • 본 연구에서는 비대칭 이중게이트 MOSFET의 상하단 게이트 산화막 두께 비에 대한 문턱전압 및 전도중심의 변화에 대하여 분석하고자한다. 비대칭 이중게이트 MOSFET는 상하단 게이트 산화막의 두께를 다르게 제작할 수 있어 문턱전압이하 영역에서 전류를 제어할 수 있는 요소가 증가하는 장점이 있다. 상하단 게이트 산화막 두께 비에 대한 문턱전압 및 전도중심을 분석하기 위하여 포아송방정식을 이용하여 해석학적 전위분포를 구하였다. 이때 전하분포는 가우스분포함수를 이용하였다. 하단게이트 전압, 채널길이, 채널두께, 이온주입범위 및 분포편차를 파라미터로 하여 문턱전압 및 전도중심의 변화를 관찰한 결과, 문턱전압은 상하단 게이트 산화막 두께 비에 따라 큰 변화를 나타냈다. 특히 채널길이 및 채널두께의 절대값보다 비에 따라 문턱전압이 변하였으며 전도중심이 상단 게이트로 이동할 때 문턱전압은 증가하였다. 또한 분포편차보단 이온주입범위에 따라 문턱전압 및 전도중심이 크게 변화하였다.

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Changes of the surface hardness and the light transmittance of PET film by ion implantations (이온 주입에 의한 PET막의 표면경도변화 및 광 투과도 변화)

  • 박재원;이재형;이재상;장동욱;최병호;한준희
    • Journal of the Korean Vacuum Society
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    • v.10 no.2
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    • pp.241-246
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    • 2001
  • Single or dual ion implantations were performed onto the transparent polyethylene terephthalate(PET) sheet, and the surface hardness and the light transmittance in the visual-UV range were examined. Nanoindentation showed that the surface hardness was the highest at about 50 nm depth from the surface and was increased by about 3 times when nitrogen ions were implanted with energy and dose of 90 keV and $1\times10^{15}\textrm{/cm}^2$ respectively. When dual ions such as He+N and N+C ions were implanted into PET, the hardness was increased even more than the case only N ions were implanted. Especially, when PET were implanted with N+C dual ions, the surface hardness of PET increased 5 times more as compared to when implanted with N ions alone. The light at the 550 nm wavelength(visual range) transmitted more than 85%, which is close to that of as-received PET, and at the wavelength below 300 nm(UV range) the rays were absorbed more than 95% as traveling through the sheet. implying that there are processing parameters which the ion implanted PET maintains the transparency and absorbs the UV rays. It can be considered that the increase in the hardness of polymeric materials is attributed to not only cross linking but also forming hard inclusions such as hard C-N compounds, as evidenced by the formation of the highest hardness when both N and C ions are implanted onto PET.

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The study on the change of wear resistance of STD11 steel by nitrogen implantation (질소이온 주입에 의한 STD 11강의 내마모 특성변화에 관한 연구)

  • Han, Jeon G.;Song, Keun;Park, Jin Y.
    • Journal of the Korean Vacuum Society
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    • v.3 no.4
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    • pp.449-456
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    • 1994
  • 산업용 주요 냉간금형 소재인 STD 11 강에 질소이온주입하여 이온조입조거에 따른 질화물형성 거동, 경도 및 내마모성 변화에 관해 연구하였다. XRD분석결과 90keV 에너지로 5$\times$1017 ions/cm2 조사 량 이상에서 Fe2N형태의 질화물이 형성되었으며 3$\times$1016 ions/cm2 범위의 모든 조사량에서 경도 및 조 사량에서 경도 및 내마모성 향상효과를 얻었다. Al2O3와의 ball-on-disc 마모거동 분석결과 STD 11모재 는 응착마모와 산화마모의 혼합형태로 마모되는 반면 질소이온주입한 경우 산화마모 경향이 강하게 나 타났다.

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Color Enhancement of Titanium with Nitrogen ion Implantation (질소이온주입을 이용한 티타늄 발색 향상)

  • 송오성;이기영;이정임
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.4 no.1
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    • pp.13-16
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    • 2003
  • We implanted $N^+ion$ into TiO$_2$/Ti substrates with 70 keV by varying dose of 0, 2, 5, and $10{\times}10^{17}/cm$^2$$. In addition, $N^+ion$implanted TiO$_2$ specimens were annealed at $600^{\circ}C$ for 2 hours in Atmosphere. We investigated the color evolution, surface roughness, and hardness of specimens with doses. We report that the color changed from white into dark-yellow as dose increased. ion implanted surfaces became smooth when they were annealed. Moreover, hardness increased up to 10% when we annealed ion implanted TiO$_2$. Our results imply that we may enhanced titanium color and surface hardness.

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Phenomenal study on the dopant activation behavior in polysilicon thin films doped by non-mass separated ion mass doping technique (비질량 분리 이온 질량 주입법으로 도핑시킨 다결정 박막의 도판트 활성화 거동)

  • Yoon, Jin-Young;Choi, Duck-Kyun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.1
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    • pp.143-150
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    • 1997
  • The electrical properties of polysilicon thin films implanted with $B_2H_6$ diluted in $H_2$ as dopant source using ion mass doping technique and the effect of radiation damage on the dopant activation behavior were investigated. Comparing the SIMS profiles of boron in polysilicon films with that obtained from computer simulation using TRIM92 the most probable ion species were $B_2H_x\;^+$(x=1, 2, 3‥‥) type molecular ions. As a result of the Implantation of energetic massive ions, a continuous amorphized layer was created in polysilicon films where the fraction of amorphized layer varied with doping time. This amorphization comes from the fact that mass separation of implanting species is not employed in this ion mass doping technique. In the dopant activation behavior, reverse annealing phenomenon appeared in the intermediate annealing temperature range for a severely damaged specimen. The experimental result showed that the off-state current of the p-channel polysilicon thin film transistor is dependent on the degree of radiation damage.

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Determination of Total Chlorine Residuals by Flow Injection Analysis (흐름 주입 분석법에 의한 총 잔류염소의 정량)

  • Choi, Yong Wook
    • Journal of the Korean Chemical Society
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    • v.43 no.4
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    • pp.430-437
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    • 1999
  • The determination of total chlorine residuals in drinking water by flow injection analysis(FIA) with iodometric UV detection was investigated. The pH of the acid stream, the concentration of the iodide ion,the length of the mixing and reaction coils, the injection sample size, and flowrate were optimized as parameters for determining total chlorine residuals by FIA method. lodide was selectively oxidized to iodine by hypochlorite at pH 8.3 Ethylenediamine as masking agent for masking interference ions from the sample was given the best efficency. Calibration curve presented linear range of 0.03-3 mg/L for hypochlorite ion with a correlation coefficient of 0.999 or better. The detection limit was found to be 0.007 mg/L for hypochlorite ion. Under these analytical conditions, total chlorine residuals in several tap water sampled in the city of Jeonju were analyzed.

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Photometric Determination of Chlorite ion by Flow Injection Analysis (흐름주입 분석에 의한 아염소산 이온의 분광광도법 정량)

  • Choi, Yong Wook;Lee, Su Young;Kim, Mi Kyung;Park, Sung Ho
    • Journal of the Korean Chemical Society
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    • v.44 no.6
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    • pp.556-562
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    • 2000
  • The determination of chlorite ion by flow injection analysis(FIA) with iodometric UV detection were investigated. Under rather acidic condition, chlorite ion react with iodide ion to form iodine and itself is reduced to chloride ion. The chlorite ion was determined indirectly by measuring absorbance of yellow colored iodine at 370 nm. The lengths of the mixing coil and the reaction coil, the pH of the acid stream, the concentration of the iodide ion, the injection loop volume, temperature, and flowrate were optimized as parameters for selectively determining a sort of inorganic disinfection by-product, chlorite ion by using FIA-UV detection setup. Masking agents for removing oxidants or interferences from the prepared water were tested. Independent calibration curve presented linear range of 0.002-0.2 mg/L for chlorite ion with a correlation coefficient of 0.999 or better. The limit of detection(LOD) was 0.18 ${\mu}g/L$ for chlorite ion.

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Threshold Voltage Shift for Doping Profile of Asymmetric Double Gate MOSFET (도핑분포함수에 따른 비대칭 이중게이트 MOSFET의 문턱전압이동현상)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.19 no.4
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    • pp.903-908
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    • 2015
  • This paper has analyzed threshold voltage shift for doping profile of asymmetric double gate(DG) MOSFET. Ion implantation is usually used in process of doping for semiconductor device and doping profile becomes Gaussian distribution. Gaussian distribution function is changed for projected range and standard projected deviation, and influenced on transport characteristics. Therefore, doping profile in channel of asymmetric DGMOSFET is affected in threshold voltage. Threshold voltage is minimum gate voltage to operate transistor, and defined as top gate voltage when drain current is $0.1{\mu}A$ per unit width. The analytical potential distribution of series form is derived from Poisson's equation to obtain threshold voltage. As a result, threshold voltage is greatly changed by doping profile in high doping range, and the shift of threshold voltage due to projected range and standard projected deviation significantly appears for bottom gate voltage in the region of high doping concentration.