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Thermal Effusion of Implanted Inert Gas Ions from Si(100)  

Jo Sam K. (Department of Chemistry, Kyung Won University)
Publication Information
Journal of the Korean Vacuum Society / v.15, no.1, 2006 , pp. 73-80 More about this Journal
Abstract
Thermally-driven effusion of inert gases out from Si(100), into which energetic $\~l keV\;He^+,\;Ne^+,\;A^r+,\;and\;Kr^+ ions$ had been implanted at a moderate substrate temperatures of $\~400 K$, was investigated by means of temperature-programmed desorption (TPD) mass spectrometry. While He effused out broadly over $500\~1,100 K$, Ne, Ar, and Kr effusion occurred sharply at 810, 860, and 875 K, respectively. Hydrogen adsorption/desorption analysis for the ion-treated Si(100) surfaces indicated minimal to severe damage by ions with increasing mass from He to Kr. Implications of these results in light of literature reports are discussed.
Keywords
Si(100); Inert gas; ion implantion; TPD; Thermal evolution; Defect;
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