• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2002.04a
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• pp.660-665
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• 2002

Mirror surface finish of Si-wafers has been achieved by rotary in-feed machining with cup-type wheels in ELID grinding. But the diameter of the workpiece is limited with the diameter of grinding wheel in the in-feed machining method. In this study, grinding experiments by the rotary surface grinding machine with straight type wheels ware conducted, by which the possible grinding area of the workpiece is independent of the diameter of the wheels. For the purpose of investigating the grinding characteristics of large scale diametrical silicon wafer, grinding conditions such as rotation speed of grinding wheels and revolution of workpieces are varied, and grinding machine used in this experiment is rotary type surface grinding n/c equipment with an ELID wit. The surface ground using the SD8000 wheels showed that mirror like surface roughness can be attained near 2 - 6 nm in Ra.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.1
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• pp.1-5
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• 2013

Wafer-to-Wafer (W2W) integration technology is an emerging technology promising many benefits, such as reduced size, improved performance, reduced power, lower cost, and divergent integration. As the maturity of W2W technology progresses, new applications will become more viable. However, at present the cost for W2W integration is still very high and both manufacturing yield and reliability issues have not been resolved yet for high volume manufacturing (HVM). Especially for WTW integration resolving compound yield issue can be a key factor for HVM. To have the full benefits of WTW integration technology more than simple wafer stacking technologies are necessary. In this paper, the manufacturing yield for W2W integration is described and the challenges of WTW integration will be discussed.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.2
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• pp.49-53
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• 2018

Recently, technologies for integrating various devices such as a flexible device, a transparent device, and a MEMS device have been developed. The key processes of heterogeneous device manufacturing technology are chip or wafer-level bonding process, substrate grinding process, and thin substrate handling process. In this study, the effect of Si substrate grinding process on the electrical properties of tin oxide thin films applied as transparent thin film transistor or flexible electrode material was investigated. As the Si substrate thickness became thinner, the Si d-spacing decreased and strains occurred in the Si lattice. Also, as the Si substrate thickness became thinner, the electric conductivity of tin oxide thin film decreased due to the lower carrier concentration. In the case of the thinner tin oxide thin film, the electrical conductivity was lower than that of the thicker tin oxide thin film and did not change much by the thickness of Si substrate.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1998.04a
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• pp.91-96
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• 1998

In recent years, the tribological behavior of coated ceramic material has been the topic of much interest. Particularly, the understanding of the tribological performance of thin film under light load is important for potential applications in MEMS. In this work under light load and low speed, the tribological behavior of coated silicon was investigated. The results show that both adhesive and abrasive wear occur depending on the sliding condition. Also the effect of humidity on friction was influenced by the apparent ares of contact between the two surfaces. Finally, undulations on the silicon wafer were found to be effective in trapping wear particles.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.946-949
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• 2001

Mirror surface finish of Si-wafers has been achieved by rotary in-feed machining with cup-type wheels in ELID grinding. But the diameter of the workpiece is limited with the diameter of the grinding wheel in the in-feed machining method. In this study, some grinding experiments by the rotary surface grinding machine with straight type wheels were conducted, by which the possible grinding area of the workpiece is independent of the diameter of the wheels. For the purpose of investigating the grinding characteristics of large scale diametral silicon wafer, grinding conditions such as rotation speed of grinding wheels and revolution of workpiece are varied, and grinding machine used in this experiment is rotary type surface grinding m/c equipped with an ELID unit. The surface ground using the SD8000 wheels showed that mirror like surface roughness can be attained near 2~6nm in Ra.

• Journal of the Korean Society for Precision Engineering
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• v.13 no.6
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• pp.45-51
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• 1996

Silicon wafers are required to be finished under the roughness of nanometer order for the subsequent chip fabrication processes. Recently, the finish grinding techniques have been researched for the improvement of accuracy and surface roughness simultaneously. Among them, the grinding technique using fine abrasive has been known as an easily accessible method. However, the manufacture of the fine grit grinding wheel has been very difficult because of the coherence of the grits. In this paper, the development of the ultrafine grit silica($SiO_2$) grinding wheel by the combination of the binder coating and the vacuum forming techniques is reported. And, the mechanochemical removal effects of the grinding conditions are discussed. Finally, a successful result of Ra O.4nm. Rmax 4nm in the ground surface roughness of a 6 inch silicon wafer was achieved.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.81-85
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• 2005

In this paper, the structural design optimization of a wafer grinding machine using a multi-step optimization with genetic algorithm is presented. The design problem, in this study, is to find out the optimum configuration and dimensions of structural members which minimize the static compliance, the dynamic compliance, and the weight of the machine structure simultaneously under several design constraints. The first design step is shape optimization, in which the best structural configuration is found by getting rid of structural members that have no contributions to the design objectives from the given initial design configuration. The second and third steps are sizing optimization. The second design step gives a set of good design solutions having higher fitness for lightweight and minimum static compliance. Finally the best solution, which has minimum dynamic compliance and weight, is extracted among those good solution set. The proposed design optimization method was successfully applied to the structural design optimization of a high precision wafer grinding machine. After optimization, both static and dynamic compliances are reduced more than $92\%\;and\;93\%$ compared with the initial design, which was designed empirically by experienced engineers. Moreover the weight of the optimized structure are also slightly reduced than before.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.12
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• pp.1285-1289
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• 2012

This study has been focused on application of ELID lapping process for mirror-surface machining of sapphire wafer. Sapphire wafer is a superior material with optic properties of high performance as light transmission, thermal conductivity, hardness and so on. High effective surface machining technology is necessary to use sapphire as various usages. The interval ELID lapping process has been set up for lapping of the sapphire material. According to the ELID lapping experimental results, it shows that 12.5 kg of load for lapping is most pertinent to ELID lapping. the surface of sapphire can be eliminated by metal bonded wheel with micron abrasives and the surface roughness of 60 nmRa can be gotten using grinding wheel of 2,000 mesh in 4.5 um, depth of cut. In this study, the chemical experiments after ELID grinding also has been conducted to check chemical reaction between workpiece and grinding wheel on ELID grinding process. It shows that the chemical reaction has not happened as the results of the chemical experiments.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.218-223
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• 2001

The chemical-mechanical polishing process was carried out for 2"-dia. sapphire wafer grown by horizontalBridgman method on the urethane lapping pad with the silica sol. The polished wafer shows the full-width at halfmaximum of 200~400 arcsec in double-crystal X-ray diffraction, indicating that the slicing, grinding and lapping processes before the polishing process affected the crystalline structural property of the wafer surface by the mechanical residual stress. For the inclusion of surface treatments after chemical-mechanical polishing such as the thermal annealing at the temperature of $1,200^{\circ}C$for 4 hrs. and chemical etching, the crystalline quality was sigdicantly enhanced with the reduced full-width at half maximum up to 8.3 arcsec.arcsec.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1999.05a
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• pp.128-133
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• 1999

In recent years, LSI devices have become more powerful and lower-priced, caused by a development of various wafer materials and an increase in the diameter of wafers. On the other hand, these have created some serious problems in manufacturing of wafers because materials used as semiconductor substrate are very brittle. In view of this fact, there are some trials to apply shear-mode(or ductile-mode) grinding for efficient manufacturing of semiconductor wafers instead of conventional lapping process. In fact grinding process that has not only more excellent degree of accuracy but also more adaptable to fully automated manufacturing than lapping, is already used in Si machining field. This paper described the elementary studies to establish the grinding technology of wafers. First, we investigated the variation of grinding force and the transition of grinding mode as various grinding conditions. Then, it was inspected that the change of grinding force affected the integrity such as the topography and the roughness of ground surfaces, and led to the chemical defects generation and distribution in damaged layer. The degree of defects was estimated by FT-IR(Fourier Transformed Infrared) Spectroscopy and Auger Electron Spectroscopy