• Title/Summary/Keyword: 우물

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Growth and photoluminescence of the strained ZnTe/ZnMnTe single quantum well (스트레인을 받는 ZnTe/ZnMnTe 단일양자우물의 성장과 광발광 특성)

    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.12 no.6
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    • pp.269-269
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    • 2002
  • ZnTe/ZnMnTe single quantum well of high quality was grown by hot-wall epitaxy, in which ZnMnTe layer was used as a barrier. It was found that ZnTe well layer was under severe strain. Very sharp luminescent peaks of the heavy-hole exciton (el-hhl) and the light-hole exciton (el-lhl) were observed from the photoluminescence (PL) measurement. As the well layer thickness increases, the peaks associated with excitons of (el-hhl) and (el-lhl) were shifted toward the lower energy side. The temperature dependence of the PL peak intensity was well explained by the thermal activation theory.

Growth and photoluminescence of the strained ZnTe/ZnMnTe single quantum well (스트레인을 받는 ZnTe/ZnMnTe 단일양자우물의 성장과 광발광 특성)

  • 최용대
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.12 no.6
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    • pp.267-271
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    • 2002
  • ZnTe/ZnMnTe single quantum well of high quality was grown by hot-wall epitaxy, in which ZnMnTe layer was used as a barrier. It was found that ZnTe well layer was under severe strain. Very sharp luminescent peaks of the heavy-hole exciton (el-hhl) and the light-hole exciton (el-lhl) were observed from the photoluminescence (PL) measurement. As the well layer thickness increases, the peaks associated with excitons of (el-hhl) and (el-lhl) were shifted toward the lower energy side. The temperature dependence of the PL peak intensity was well explained by the thermal activation theory.

Effect of Stripe Width on Threshold in Single Quantum Well Laser Diodes (단일양자우물 Laser Diode에서 Stripe 폭이 문턱치에 미치는 영향)

  • 이성재
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.19 no.3
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    • pp.591-596
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    • 1994
  • Threshold dependence on stripe width in gain-guided single quantum well lasers has been examined by complex domain effective index method. It is found, in narrow stripe regime, that the lateral optical confinement estimated by newly introduced parameters decreases very rapidly as the transverse optical confinement factor decreases. Thus, in a single quantum well laser with a usually very small, the optical confinement may become very poor depending on stripe width not only in the transverse but also in the lateral direction, further enhancing the gain saturation and often leading to an anomalously high threshold current. The understanding of rather anomalous threshold dependence on stripe width will be very important in optimization of quantum well laser diode structure.

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Fabrication of dual wavelength photodetector using quantum well intermixing (다중양자우물의 상호 섞임 현상을 이용한 다중 파장 검출기의 제작)

  • 여덕호;윤경훈;김항로;김성준
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.02a
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    • pp.10-11
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    • 2000
  • 광통신을 이용한 근거리 전송과 장거리 전송에서 1.3 및 1.55 $mu extrm{m}$ 파장 영역의 빛이 사용되고 있다. 향후, 각 가정마다 광선로를 연결하는 Fiber-to-the-home (FTTH)의 개념과 광CATV가 발전함에 따라 1.3 및 1.55 $\mu\textrm{m}$ 빛을 검출하는 소자와 송신하는 소자가 필요하게 된다. 본 논문에서는 이러한 다중파장을 검출할 수 있는 집적소자를 제작 및 측정하였다. 본 논문에서 사용된 epitaxial layer의 구조는 N-InP 기판 위에 1 $\mu\textrm{m}$의 n-InP buffer층, 5층의InGaAs/InGaAsP 다중양자우물과 0.2 $\mu\textrm{m}$ InGaAsP separate confinement heterostructure (SCH) 층, 0.5$\mu\textrm{m}$ InP clad층과 0.1 $\mu\textrm{m}$ InGaAs cap 층으로 구성되어있다. 모든 epi 층은 InP 기판에 격자 정합이 되어있다. 다중양자우물구조는 84 $\AA$의 InGaAs 우물층과 100 $\AA$의 InGaAsP 장벽층으로 구성되며, 상온에서 0.787 eV (1.575 $\mu\textrm{m}$)의 bandgap energy를 갖도록 설계하였다. (중략)

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The Effect of Quantum Well Structure on the Characteristics of GaN-based Light-Emitting Diode (양자 우물 구조가 GaN 기반 LED 특성에 미치는 영향)

  • Lee, Jae-Hyun;Yeom, Keesoo
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.10a
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    • pp.251-254
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    • 2012
  • In this paper, the output characteristics of GaN-based LED considering quantum well structure are analyzed. The basic structure of the LED consists of active region of GaN barrier and InGaN quantum well between AlGaN EBL(Electron Blocking Layer) and AlGaN HBL(Hole Blocking Layer) on GaN buffer layer. The output power, internal quantum efficiency characteristics of LED active region considering thickness of quantum well, number of quantum well and doping of barrier are analyzed using ISE-TCAD.

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Analysis of Surface Reflection All-Optical Switches using InGaAs/InAlAs Multiple Quantum Wells (InGaAs/InAlAs 다중 양자우물을 이용한 표면 반사형 전광 스위치의 해석)

  • Choi, Yong-Ho;Kim, Kyung-Whan;Choi, Woo-Young
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.9
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    • pp.23-30
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    • 2000
  • The performance of two types of surface reflecting all-optical switches with InGaAs/InAlAs multiple quantum wells are investigated. The absorption spectra and the refractive index changes of the quantum well are calculated for various pump and probe beam intensities and device conditions. From theses results, on ON/OFF ratio and switching speed of the two switches are compared. It is shown that the switch using DBR has higher ON/OFF ratio and higher switching speed than the switch without DBR.

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The Evaluation of Groundwater Pumping Capacity at a Catchment Area with Interrelated Wells in Volcanic Island: I. Without Consideration of Water Quality (상관우물들이 분포하는 화산섬 집수역에 대한 지하수 양수능의 평가 I. 수질(水質)을 고려하지 않은 경우)

  • Lee, Sunhoon;Machida, Isao;Imoto, Yukari
    • Journal of Environmental Impact Assessment
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    • v.12 no.3
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    • pp.189-198
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    • 2003
  • The purpose of this paper is to evaluate the groundwater pumping capadty at a catchment area containing interrelated wells without considering their qualities by using numerical simulation in Miyake Island, young volcanic island with very complicated hydro-geological formations. The groundwater pumping capadties of each well and over entire study area were estimated as the IMY(i,t) by individual withdrawals and the SSMY(t) by simultaneous withdrawals. These results can be used to secure a sure source for taking a plan for supplying water use in young volcanic island as Miyake Island. In simultaneous withdrawals, the withdrawals from well no. 5 and 6 should have the roles as the barrier wells against the intrusion of the groundwater of the part adjacent to Tairo Pond into the inner part of study area. Therefore, it can be suggested to adopt the simultaneous withdrawals as the optimal approach of groundwater management for supplying water use with respect to quantity and quality.

Species of Woods Excavated from the Wells dated between the Unified Silla and the Joseon period - Bongnyong-dong site, Sangju - (통일신라~조선시대 우물지 출토 목재의 수종 - 상주(尙州) 복룡동(伏龍洞) 유적 -)

  • Lee, Hyosun;Oh, Seungjun
    • Conservation Science in Museum
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    • v.10
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    • pp.63-74
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    • 2009
  • During excavations of the historic sites in Bongnyong-dong, Sangju, a total of 81 ancient wells constructed during the Unified Silla (668 - 935), Goryeo (918 - 1392) and Joseon (1392 - 1910) periods were found. Wood was mainly used for the bottom structure of the well beneath the stone walls. A total of 136 pieces of wood from the wells were analyzed to ascertain their species, and six species were identified: 116 pieces, accounting for 85.9% of the total, of Pinus densiflora, one piece of Platycarya strobilacea Sieb.et Zucc., nine pieces of Castanea sp., three pieces of Quercus acutissima Carruth., one piece of Quercus serrata Thunb., and five pieces of Acer sp. The fact that most of the pieces of wood were pine indicates that pine was considered a suitable wood for the construction of wells in pre-modern period.

Fabrication of Nanowellstructured and Nanonetstructured Metal Films using Anodic Porous Alumina Film (다공성 알루미나 박막을 이용한 금속 나노우물과 나노그물 구조의 박막 제작)

  • Noh, Ji-Seok;Chin, Won-Bai
    • Journal of the Korean Vacuum Society
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    • v.15 no.5
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    • pp.518-526
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    • 2006
  • Nanoporous alumina film was fabricated by anodization of an aluminum sheet. Highly ordered nanowellstructured and nanonets-tructured metal films were fabricated by vacuum evaporation of several metals(Al, Sn, and Co) using the anodic nanoporous alumina film as a template. In this experiment, an anodic porous alumina film with the cell size of 100 nm and the pore diameter of 60 nm was used. The resistance heating method was adopted for evaporating a desired metal, and vapor deposition was carried out under the base pressure of torr. It was founded that whether the structure fabricated by vacuum evaporation is nanowell or nanonet is dependent on the amount of deposited material. When an anodic porous alumina film with the cell size of 100 nm and the pore diameter of 60 nm was used, a nanowell-structured film was fabricated when a sufficient amount of metal was suppled to cover the surface pores. On the other hand, nanonet-structured film was fabricated bellow a half the amount of metal required for nanowell-structured film.

Well Loss in Fractured Rock Formation with Radial Flow during Pumping Test (양수시험시 방사상흐름을 보이는 균열암반 대수층에서의 우물손실)

  • 이철우;이대하;정지곤;김구영;김용제
    • Journal of Soil and Groundwater Environment
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    • v.7 no.4
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    • pp.17-23
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    • 2002
  • Pumping tests were carried out from seven wells in fractured rocks. The time-drawdown data were obtained from pumping wells and corrected for the elapsed time of step drawdown test using Cooper-Jacob's method. A statistical method. the least square of error, was used to yield the coefficient of aquifer losses, the coefficient of well losses, and the power which indicates the severity of the turbulence. The values of the power range from 1.65 to 6.48. The well losses result mainly from turbulent flow caused by radial flow nearby pumping wells. The turbulent flow depends on Reynolds number. Since the hydraulic characteristics of fractured rocks control the fluid velocity, the value of the power is an important factor to understand the aquifer system of fractured rocks.