대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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InGaAs/InAlAs 다중 양자우물을 이용한 표면 반사형 전광 스위치의 해석

Analysis of Surface Reflection All-Optical Switches using InGaAs/InAlAs Multiple Quantum Wells

  • 최용호 (延世大學校 電氣電子工學科) ;
  • 김경환 (延世大學校 電氣電子工學科) ;
  • 최우영 (延世大學校 電氣電子工學科)
  • Choi, Yong-Ho (Dept. of Electrical and Electronic Eng., Yonsei University) ;
  • Kim, Kyung-Whan (Dept. of Electrical and Electronic Eng., Yonsei University) ;
  • Choi, Woo-Young (Dept. of Electrical and Electronic Eng., Yonsei University)
  • 발행 : 2000.09.01
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초록

본 논문에서는 InGaAs/InAlAs 다중 양자우물을 이용한 두가지 타입의 비대칭 Fabry-Perot 전광 스위치에 대한 해석을 시도하였다. 전광 스위치의 동작을 해석하기 위해서 먼저 양자우물의 광 흡수계수와 굴절율의 변화 특성을 계산하였다. 양자우물의 비선형성 해석 결과를 토대로 전광 수위치의 ON/OFF 비와 스위칭 속도를 비교하였다. 시뮬레이션 결과로부터, DBR을 이용한 구조의 전광 수위치는 DBR이 없는 형태의 전광 수위치보다 ON/OFF 비를 향상시킬 수 있을 뿐만 아니라 스위칭 시간도 단축시킬 수 있음을 알 수 있었다.

The performance of two types of surface reflecting all-optical switches with InGaAs/InAlAs multiple quantum wells are investigated. The absorption spectra and the refractive index changes of the quantum well are calculated for various pump and probe beam intensities and device conditions. From theses results, on ON/OFF ratio and switching speed of the two switches are compared. It is shown that the switch using DBR has higher ON/OFF ratio and higher switching speed than the switch without DBR.

키워드

참고문헌

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