• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.307-313
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• 2010

One-dimensional cubic phase silicon carbide nanowires (${\beta}$-SiC NWs) were efficiently synthesized by thermal chemical vapor deposition (TCVD) with mixtures containing Si powders and nickel chloride hexahydrate $(NiCl_2{\cdot}6H_2O)$ in an alumina boat with a carbon source of methane $(CH_4)$ gas. SEM images are shown that the growth temperature (T) of $1,300^{\circ}C$ is not enough to synthesize the SiC NWs owing to insufficient thermal energy for melting down a Si powder and decomposing the methane gas. However, the SiC NWs could be synthesized at T>$1,300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is T=$1,400^{\circ}C$. The synthesized SiC NWs have the diameter with an average range between 50~150 nm. Raman spectra clearly revealed that the synthesized SiC NWs are forming of a cubic phase (${\beta}$-SiC). Two distinct peaks at 795 and $970 cm^{-1}$ in Raman spectra of the synthesized SiC NWs at T=$1,400^{\circ}C$ represent the TO and LO mode of the bulk ${\beta}$-SiC, respectively. XRD spectra are also supported to the Raman spectra resulting in the strongest (111) peaks at $2{\Theta}=35.7^{\circ}$, which is the (111) plane peak position of 3C-SiC. Moreover, the gas flow rate of 300 sccm for methane is the optimal condition for synthesis of a large amount of ${\beta}$-SiC NW without producing the amorphous carbon structure shown at a high methane flow rate of 800 sccm. TEM images are shown two kinds of the synthesized ${\beta}$-SiC NWs structures. One is shown the defect-free ${\beta}$-SiC NWs with a (111) interplane distance of 0.25 nm, and the other is the stacking-faulted ${\beta}$-SiC NWs. Also, TEM images exhibited that two distinct SiC NWs are uniformly covered with $SiO_2$ layer with a thickness of less 2 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.379.2-379.2
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• 2014

열 화학기상증착법은 여러 가지 그래핀의 제작방법 중 대면적으로 양질의 그래핀을 효과적으로 합성할 수 있는 방법으로 널리 이용되고 있다. 이 방법으로 그래핀을 합성할 경우, 주요 변수로 성장 온도와 촉매 금속이 있으며 이를 적절히 조절함으로써 합성되는 그래핀의 결정성과 층수를 조절할 수 있다[1-3]. 본 연구에서는 탄소 용해도가 작은 두꺼운 촉매 금속 기판 위에 선택적인 위치에 탄소 용해도가 큰 얇은 촉매 금속을 증착하여 그래핀의 층수를 적절하게 제어하고자 한다. 그래핀을 합성하기 위해 온도를 증가시키는 과정에서 두 층의 촉매 금속은 표면 에너지를 낮추기 위해 합금을 형성하게 되며, 이 때 탄소 용해도가 변화할 것으로 예상된다. 이 변화하는 탄소 용해도에 맞추어 탄소 공급원인 메탄 가스를 주입하는 시기를 적절히 조절하게 되면, 합성되는 그래핀의 층수 조절이 가능할 것이라 예상한다. 탄소 용해도가 큰 금속으로 니켈을, 탄소 용해도가 작은 금속으로 구리를 선택하였다. 우선 니켈의 확산 거리를 계산하여 메탄 가스를 주입하는 적절한 온도를 결정하였으며, 이 온도를 기준으로 표면에서의 니켈의 함량을 분석하였다. 니켈의 함량과 표면에서의 탄소의 구성비의 관계를 조사한 결과, 본 실험에서 이용한 방법으로 그래핀의 층수를 조절하는 것이 가능하다는 것을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.570-570
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• 2012

그래핀(graphene)은 육각형의 탄소원자 한층으로 이루어진 이차원 구조체로써 우수한 물리적, 전기적 특성으로 인해 다양한 분야에서 응요을 위한 연구가 활발히 진행되고 있다. 특히, 그래핀과 금속 나노입자의 복합구조는 수소 저장체, 가스센서, 연료전지, 화학 촉매등의 다양한 분야에서 응용이 가능하다. 현재까지 그래핀/금속나노입자 복합구조의 제작 방법에는 열증발(thermal evaporation), 전기도금법(electrodeposition), 표면 기능화(surface functionalization)를 이용한 방법이 보고되었다. 하지만 이러한 방법은 긴 공정시간이 요구되며, 나노입자의 크기 분포가 넓다는 단점을 지닌다. 본 연구에서는 화학기상증착법을 통해 합성된 그래핀이 전사된 SiO2 (300nm)/Si 기판에 염화기가 포함된 백금 화합물 분산용액을 스핀코팅(spin-coating)하고 MeV 전자빔을 조사하여 Pt/grapheme 복합구조를 형성하였다. 이 방법은 균일한 크기 분포의 나노입자의 형성이 가능하며, 간단하고, 대면적 공정이 가능하며, 다른 방법에 비해 그래핀의 결함형성이 적다는 장점을 지닌다. Pt/grapheme 의 기하학적 구조를 주사전자현미경(scanning electron microscopy)와 투과전자현미경(transimission)을 통해 분석하였고, Pt와 graphene의 일함수(workfunction)의 차이에 의해 야기되는 전하이동에 의한 도핑(doping)현상을 라만 분광기(Raman spectroscopy)와 X-선 광전자 분광기(X-ray photoelectron spectroscopy)를 통해 분석하였다.

• Elastomers and Composites
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• v.45 no.4
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• pp.298-308
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• 2010

The mechanical properties and surface characteristics of parylene thin film were improved using Xylydene-based dimers (DPX-C, DPX-D, and DPX-N). A single-parylene-C, D, N film and a hybrid chemical and physical parylene thin films in which two types are mixed were manufactured for each dimer by adjusting the deposition conditions and the thickness of the thin film by input. Parylene was deposited by chemical vapor deposition (CVD) and the thermal characteristics of the single thin film and the hybrid thin film were compared by thermal analysis. The mechanical properties of the thin films were characterized by tensile strength, elongation, and tear force tests, and the surface characteristics of the thin films were evaluated by contact angle and surface energy measurements. The hybrid chemical parylene thin film in which two types are mixed can complement the strengths and weaknesses of the different dimers, while the physical parylene thin film can freely adjust the thin film characteristics of the coated surface and the opposite surface.

• Korean Chemical Engineering Research
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• v.46 no.2
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• pp.389-396
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• 2008

The effect of thermal cycling on bond strength and residual stress at the interface between benzocyclobutene (BCB) and plasma enhanced chemical vapor deposited (PECVD) silicon dioxide ($SiO_2$) coated silicon wafers were evaluated by four point bending and wafer curvature techniques. Wafers were bonded using a pre-established baseline process. Thermal cycling was done between room temperature and a maximum peak temperature. In thermal cycling performed with 350 and $400^{\circ}C$ peak temperature, the bond strength increased substantially during the first thermal cycle. The increase in bond strength is attributed to the relaxation in residual stress by the condensation reaction of the PECVD $SiO_2$: this relaxation leads to increases in deformation energy due to residual stress and bond strength.

• Korean Chemical Engineering Research
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• v.46 no.3
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• pp.619-625
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• 2008

The effects of thermal cycling on residual stresses in both inorganic passivation/insulating layer that is deposited by plasma enhanced chemical vapor deposition (PECVD) and organic thin film that is used as a bonding adhesive are evaluated by 4 point bending method and wafer curvature method. $SiO_2/SiN_x$ and BCB (Benzocyclobutene) are used as inorganic and organic layers, respectively. A model about the effect of thermal cycling on residual stress and bond strength (Strain energy release rate), $G_c$, at the interface between inorganic thin film and organic adhesive is developed. In thermal cycling experiments conducted between $25^{\circ}C$ and either $350^{\circ}C$ or $400^{\circ}C$, $G_c$ at the interface between BCB and PECVD $ SiN_x $ decreases after the first cycle. This trend in $G_c$ agreed well with the prediction based on our model that the increase in residual tensile stress within the $SiN_x$ layer after thermal cycling leads to the decrease in $G_c$. This result is compared with that obtained for the interface between BCB and PECVD $SiO_2$, where the relaxation in residual compressive stress within the $SiO_2$ induces an increase in $G_c$. These opposite trends in $G_cs$ of the structures including either PECVD $ SiN_x $ or PECVD $SiO_2$ are caused by reactions in the hydrogen-bonded chemical structure of the PECVD layers, followed by desorption of water.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.377-382
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• 2007

In this study, we report the synthesis of the single-walled carbon nanotubes(SWCNTs) using laminated catalyst(Al/Fe/Al) layer deposited by sputter on Si(001). SWCNTs are grown by thermal chemical vapor deposition (TCVD) method. As the results of scanning electron microscopy(SEM), high resolution transmission electron microscopy(HR-TEM) and Raman spectroscopy, we confirmed the SWCNTs bundles with narrow diameter distribution of $1.14{\sim}1.32\;nm$ and average G&D ratio of 22.76. Compare to the sample having Fe/Al catalyst layer, it can be proposed that the top-aluminum incorporated with iron catalyst plays an important role in growing process of CNTs as a agglomeration barrier of the Fe catalyst. Thus, we suggest that a proper quantity of aluminium metal incorporated in Fe catalyst induce small and uniform iron catalysts causing SWCNTs with narrow diameter distribution.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.212-216
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• 1999

SiC(3C) photodiodes (PDs) were fabricated on p-type Si(111) substrates using chemical vapor deposition (CVD) technique by pyrolyzing tetramethylsilane (TMS) with $H_{2}$ carrier gas. Electrical properties of SiC(3C) were investigated by Hall measurement and current-voltage (I-V) characteristics. SiC(3C) layers exhibited n-type conductivity. Ohmic contact was formed by thermal evaporation Al metal through a shadow-mask. The optical gain $(G_{op})$ of the SiC(3C)/Si PD was measured as a function of the incident wavelength. For the analysis of the photovoltaic detection of the Sic(3C) n/p PD, the spectral response (SR) has calculated by using the electrical parameters of the SiC(3C) layer and the geometric structure of the PD. The peak response calculated for properly chosen parameters was about 0.75 near 550 nm. We expect a good photoresponse in the SiC(3C) heterostructure for the wavelength range of 400~600 nm. The SiC(3C) photodiode can detect blue and near ultraviolet (UV) radiation.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.5
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• pp.197-205
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• 2015

The Diamond Like Carbon(DLC) films for the Electro Optical Tracking System(EOTS) by using Plasma Enhanced Chemical Vapor Deposition(PECVD) method is presented. We achieve that the DLC films can reduce the surface delamination of thermal observation sensor front window due to the high hardness, low friction and chemical inertness which is comparable to a Si film. According to our experiment results, DLC films can be used for various electro optical systems to eliminate surface delamination.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.187-194
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• 1998

InGaAsP epitaxial layers lattice matched to InP were grown at 600 and $620^{\circ}C$ by low pressure metalorganic chemical vapor deposition. Solid phase composition of group III was controlled by the diffusion flux gas phase to the reachion surface. For the case of group V, the difference of As and P vapor pressure and pyrolysis efficiency of $PH_3$and $AsH_3$ mainly determined their in corporation into solid. An abnormal behavior of peak energy shift was observed below 75K in temperature variant photoluminescence study. This abnormal behavior was explained by the difference in order of ordering which makes spatial variation of energy gap in InGaAsP layer and this explanation was supported by the analyses of transmission electron microscopy and transmission spectroscopy.