• 한국신재생에너지학회:학술대회논문집
• /
• 2011.05a
• /
• pp.122.1-122.1
• /
• 2011

Phosphorus is known to pile-up at the silicon surface when it is thermally oxidized. A thin layer, about 40nm thick from the silicon surface, is created containing more phosphorus than the bulk of the emitter. This layer has a gaussian profile with the peak at the surface of the silicon. In this study the pile-up effect was studied if this layer can act as a front surface field for solar cells. The effect was also tested if its high dose of phosphorus at the silicon surface can lower the contact resistance with the front metal contact. P-type wafers were first doped with phosphorus to create an n-type emitter. The doping was done using either a furnace or ion implantation. The wafers were then oxidized using dry thermal oxidation. The effect of the pile-up as a front surface field was checked by measuring the minority carrier lifetime using a QSSPC. The contact resistance of the wafers were also measured to see if the pile-up effect can lower the series resistance.

• Korean Journal of Materials Research
• /
• v.2 no.5
• /
• pp.353-359
• /
• 1992

Thermal oxidation and plasma enhanced chemical vapor deposition of tantalum oxide thin films on p-type (100) Si substrates were studied to examine the dielectric nature of T$a_2O_5$ as a Al/T$a_2O_5$/p-Si capacitor. Microstructure and dielectric properties of the capacitors were investigated by XRD, AES, high frequency C-V analyzer, I-V meter and TEM. XRD analysis showed that the structure of T$a_2O_5$ films were amorphous, but the films were crystallized to hexagonal $\delta$-T$a_2O_5$ by 65$0^{\circ}C$ thermal oxidation treatment. It was found that the stoichiometry of the films was more or less close to 2 : 5. Leakage current density and relative dielectric constant of thermal oxidation T$a_2O_5$ film at 60$0^{\circ}C$ was 5.0${ imes}10^{-6}$/A/c$m^2 and 31.5, respectively. In the case of PECVD T$a_2O_5$film deposited at 0.47W/c$m^2 they were 2.5${ imes}10^{-5}$/A/$ extrm{cm}^2$ and 24.0, respectively. The morphology of the films and interfaces were investigated by TEM.

• Korean Chemical Engineering Research
• /
• v.46 no.2
• /
• pp.408-413
• /
• 2008

In this work, the use of LPRTO (low pressure rapid thermal oxidation) and remote plasma oxidation was evaluated for the preparation of ultra thin silicon oxide layer with less than 5 nm. The silicon oxide thickness grown by LPRTO was rapidly increased and saturated. The maximum thickness could be controlled at about 5 nm. As RF power and oxygen flow rate at a remote plasma oxidation increased, the behavior of oxide growth was almost the same as that of LPRTO. The oxide thickness of 4 nm was the maximum obtained by a remote plasma oxidation in this work. The quality of silicon oxide grown by LPRTO was comparable to the thermally grown conventional oxide.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2014.11a
• /
• pp.98-99
• /
• 2014

질산산화법(nitric acid oxidation method)은 저온에서 안정적인 산화막을 형성하는 직접산화공정으로 azeotropic point(68 wt%)인 120도 이하의 온도에서 산화막을 형성한다. 120도에서 형성한 질산산화막은 CVD법으로 형성한 산화막 보다 낮은 누설전류밀도(leakage current density)를 나타낸다. 또한 질산의 농도가 증가함에 따라 형성한 산화막의 누설전류밀도가 감소하며, 이는 열산화법으로 형성한 산화막 보다 낮다. 질산산화의 낮은 누설전류밀도는 형성한 산화막의 높은 원자 밀도와 낮은 계면준위밀도에 의한 것으로 이 특성을 이용하여 게이트 절연막(gate insulator)과 태양전지의 passivation막으로 응용되고 있다.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.29A no.3
• /
• pp.87-95
• /
• 1992

The electrical characteristics of Al/TaS12TOS15T/SiOS12T/Si metal insulator-semiconductor (MIS) capacitors were studied. Tantalum pentoxide thin films on SiOS12T/p-Si substrate have been prepared by thermal oxidation at 450-$600^{\circ}C$ of sputter deposited tantalum films. Composition and structures of the tantalum oxide films were examined by AES and XRD. From the C-V analysis, dielectric constant of TaS12TOS15T which were oxidized at 55$0^{\circ}C$ for 1h in OS12T were 18-23, the value depending on the oxidation and annealing temperature. The leakage current density was found to be about 10S0-10T-10S0-9T A/cmS02T at an applied electric field of 1 MV/cm. The dielectric breakdown strength of the tantalum oxide films annealed at 100$0^{\circ}C$ were in the range from 2.5MV/cm to 2.8 MV/cm.

• Journal of the Korean Ceramic Society
• /
• v.39 no.5
• /
• pp.460-466
• /
• 2002

Titanium oxide film was deposited on the commercially pure titanium (cp-Ti) by thermal oxidation method for its medical application. The cp-Ti disks were cleaned and then heat-treated at the temperatures of 500, 550, 600, 650, and 700${\circ}C$, respectively, for 10 min in air or Ar. To test the ability of calcium phosphate formation, the specimens were immersed in the Eagle's minimum essential medium solution at 36.5${\circ}C$ for 15 days. The morphology and chemical composition of the surfaces before and after soaking were analyzed by using FE-SEM and EDS. The in-vitro formation of carbonated calcium phosphate on the thin films containing nano-sized $TiO_2$ crystals was identified.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.61-61
• /
• 1999

저항이 5$\Omega$-cm인 n-type Si(100) 웨이퍼를 실리콘 식각시 마스크로 사용하기 위하여 습식 열산화법을 이용하여 100$0^{\circ}C$에서 SiO2을 2400$\AA$ 성장시킨 후, OPCVD 공정을 통해 785$^{\circ}C$서 SiH2Cl2 가스 30sccm과 NH3가스 100sccm을 이용하여 Si3N4를 3000$\AA$ 증착시켰다. 이 웨이퍼를 포토-리쏘그라피 공정을 거쳐 지름 2$\mu\textrm{m}$의 포토레지스트 패턴을 제작한 후 600W의 RF power하에서 CF4 가스 10sccm, CHF3 가스 15sccm, O2가스 8sccm 및 Ar가스 10sccm을 이용하여 MERIE 방법으로 Si3N4를 식각한 다음, 7:1 BHF 용액내에서 30초간의 습식식각을 통해 40wt.%의 KOH 용액내에 8$0^{\circ}C$에서 30초간의 이방성 식각을 통해 피라미드 모양의 Si FEA(field emitter array)를 제작하였다. 본 실험은 다음과 같이 완성된 Si FEA를 샤프닝 산화 후 산화막 식각을 통해 마스크를 제거한 다음, tip의 열화학적 내구성을 증가시키고 장시간 구동시 안정성과 전계방출 전류밀도를 높이기 위해 tip의 표면에 Ti를 sputter 방법으로 약 300$\AA$ 증착시킨 후, RTA 장비를 이용하여 2단계 열처리 (first annealing:$600^{\circ}C$/30sec, second annealing : 85$0^{\circ}C$/15sec)를 통해 Si FEA의 경우보다 낮은 turn-on 전압과 높은 전계방출 특성을 나타낼 것으로 기대된다.

• Korean Journal of Materials Research
• /
• v.23 no.1
• /
• pp.1-6
• /
• 2013

A simple thermal oxidation of Cu thin films deposited on planar substrates established a growth of vertically aligned copper oxide (CuO) nanorods. DC sputter-deposited Cu thin films with various thicknesses were oxidized in environments of various oxygen partial pressures to control the kinetics of oxidation. This is a method to synthesize vertically aligned CuO nanorods in a relatively shorter time and at a lower cost than those of other methods such as the popular hydrothermal synthesis. Also, this is a method that does not require a catalyst to synthesize CuO nanorods. The grown CuO nanorods had diameters of ~100 nm and lengths of $1{\sim}25{\mu}m$. We examined the morphology of the synthesized CuO nanorods as a function of the thickness of the Cu films, the gas environment, the oxidation time, the oxidation temperature, the oxygen gas flow rate, etc. The parameters all influence the kinetics of the oxidation, and consequently, the volume expansion in the films. Patterned growth was also carried out to confirm the hypothesis of the CuO nanorod protrusion and growth mechanism. It was found that the compressive stress built up in the Cu film while oxygen molecules incorporated into the film drove CuO nanorods out of the film.

• Journal of Energy Engineering
• /
• v.9 no.4
• /
• pp.319-327
• /
• 2000

산업분야의 여러공정에서 배출되는 휘발성 유기화합물은 1차적인 작업자에 대한 유해성뿐만이 아니라 대기중에 배출시의 제 2차 오염물질의 생성 때문에 최근 들어 이러한 물질의 처리에 큰 관심이 집중되고 있다. 본 연구에서는 휘발성 유기화합물로서 프로판을 사용하여 이러한 초 희박 혼합기의 제거를 위해 재생열산화법이 제안되었다. 실험장치에는 중앙에 연소실과 전기적 열량공급장치를 장착하였다. 초 희박 혼합기의 연소실에서의 산화과정과 열사화 장치의 폐열회수 특성을 연구하기 위하여 혼합기의 농도, 유속 및 연소실 최대온도와 같은 다양한 작동조건을 고려하였다. 그 결과. 재생열산화장치가 초 희박 혼합기의 산화에 적절하게 사용될 수 있음을 알았으며 최대 96%의 제거효율 얻을 수 있었다. 산화과정중에 발생하여 배출되는 CO는 운전조건을 변화시킴으로써 그 농도를 낮출 수 있었으며 열적 NOx는 배출되지 않았다. 페열회수효율은 전 운전영역에서 높게 나타났으며 그 값이 최대 98%에 이르렀다.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.4 no.3
• /
• pp.139-144
• /
• 2003

A flat type micro gas sensor was fabricated on the p-type silicon wafer with low stress Si$_3$N$_4$, whose thickness is 2 ${\mu}{\textrm}{m}$, using MEMS technology. WO$_3$ thin film as a sensing material for detection of NO$_2$ gas was deposited using a tungsten target by sputtering method, followed by thermal oxidation at several temperatures (40$0^{\circ}C$-$600^{\circ}C$) for one hour. NO$_2$ sensitivities were investigated for the WO$_3$ thin films with different annealing temperatures. The highest sensitivity was obtained for the samples annealed at $600^{\circ}C$ when it was operated at 20$0^{\circ}C$. The results of XRD analysis showed the annealed samples had polycrystalline phase mixed with triclinic and orthorhombic structures. The sample exhibits higher sensitivity when the system has less triclinic structure. The sensitivities, $R_{gas}/R_{air},$ operating at 20$0^{\circ}C$ to 5 ppm NO$_2$ of the sample annealed at $600^{\circ}C$ were approximately 90.