Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Electric Characteristics of Tantalum Pentoxide Thin Film Formed by Thermal Oxidation

열산화법으로 형성한 탄탈륨 산화막의 전기적 특성

  • 홍영호 (연암공업전문대학 전자과) ;
  • 박효덕 (연암공업전문대학 전자과) ;
  • 전춘배 (경북대학교 전자공학과) ;
  • 이덕동 (연암공업전문대학 전자과) ;
  • 김봉렬 (연세대학교 전자공학과)
  • Published : 1992.03.01
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Abstract

The electrical characteristics of Al/TaS12TOS15T/SiOS12T/Si metal insulator-semiconductor (MIS) capacitors were studied. Tantalum pentoxide thin films on SiOS12T/p-Si substrate have been prepared by thermal oxidation at 450-$600^{\circ}C$ of sputter deposited tantalum films. Composition and structures of the tantalum oxide films were examined by AES and XRD. From the C-V analysis, dielectric constant of TaS12TOS15T which were oxidized at 55$0^{\circ}C$ for 1h in OS12T were 18-23, the value depending on the oxidation and annealing temperature. The leakage current density was found to be about 10S0-10T-10S0-9T A/cmS02T at an applied electric field of 1 MV/cm. The dielectric breakdown strength of the tantalum oxide films annealed at 100$0^{\circ}C$ were in the range from 2.5MV/cm to 2.8 MV/cm.

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