• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.10A
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• pp.847-852
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• 2003

Apertures and PBG(Photonic Band Gap) has been employed on the ground plane in the coupled line filter simultaneously. In order to observe the maximum bandwidth, we used the line gap 0.2mm which is can be made in our lab. Band-pass filter type is four-stage coupled strip line filter. Teflon has been used for the substrate ($\varepsilon$$\sub$r/=3.2). The center frequency and the bandwidth are 2.18GHz and 230MHz, respectively. The bandwidth is broaden from 230MHz to 310MHz (80Mhz, about 34.7%) by aperture effect and harmonic frequencies are suppressed to 20-30dB by PBG effect. So the harmonic frequencies have been suppressed by the PBG effect and the bandwidth are broaden by aperture effect.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.7 s.98
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• pp.760-767
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• 2005

In this paper, we proposed a new type SIR bandpass filter using DAMLs. This filter is consisted of 2 layers with MEMS resonator layer and CPW feed line. DAMLs ring resonator is elevated with $10{\mu}m$ height from GaAs substrate. Using MEMS processing, we are able to realize SIR bandpass filter easily. Furthermore it is useful to integrate on conventional MMICs because it has CPW interfaces and ring resonator is isolated from substrate by air-gap. We optimized and measured the results that $S_{21}$ attenuation at rejected band is over 15 dB, insertion loss is inside the limit of 3 dB, and relative bandwidth is about $10\%$ at 60 GHz.

• Journal of Satellite, Information and Communications
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• v.10 no.3
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• pp.26-31
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• 2015

This paper deals with a size-reduced Ku-band waveguide limiter. Basically, it passes the signal from 16.125 GHz through 16.375 GHz, but when excessively high power is injected to the input port, it should change to a bandstop filter. Furthermore, it is required to change to bring attenuation by more than 20 dB and 50 dB over a narrow band and the entire passband, respectively. Therefore, in order to meet this requirement, a limiting device is implemented with multiple PIN-diode posts that enable the limiter to be the bandpass filter and stopband one at the off and on states of the PIN-diode switch, respectively. So, the design goes through the equivalent circuit modelling and the geometry is realized in the accurate electromagnetic analysis CAD tool. Finally, the result is discussed to shed light on whether it complies with the aforementioned requirement.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.05a
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• pp.59-60
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• 2018

In this paper, we studied a design method for a band-pass waveguide filter with a modified H-type resonant iris (RI) placed in a thin transverse wall of a rectangular waveguide. The horizontal straight gap at the center of a conventional H-shaped iris is modified to a U-shaped one to increase the equivalent capacitance, and the equivalent inductance is improved by changing the vertical two straight slots into C-shaped ones. A third-order band pass filter using the proposed modified H-shaped iris was designed and, it was observed that the filter operated in the frequency range of 9.22-9.75 GHz with its insertion loss of 0.5 dB and return loss of 17 dB.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.1
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• pp.43-46
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• 2018

This paper has designed a wideband bandpass filter (WBSF : Wide Band Stop Filter) using a stepped impedance resonator (SIR : Stepped Impedance Resonator) with improved performance and improved hairpin coupling structure. The SIR WBSF is small in size and has the advantage of having excellent bandstop characteristics. The designed BSF has a structure in which a quadrangular shaped hairpin of a / 4 length is arranged symmetrically on the upper and lower sides of the input and output transmission lines. The input and output terminals were terminated at 50 ohms for system applications. The center frequency of the SIR WBSF is 6.3 GHz, which is the second harmonic of 3.15 GHz. The designed filter has a 3dB bandwidth of 2.9 GHz and a transmission coefficient ($S_{21}$) of 33.2 dB. The reflection coefficient ($S_{11}$) at the center frequency is 0.106 dB. The application field is used for fixed microwave relay stations, fixed satellite and earth stations, and fixed satellite communications. The overall size is $20mm{\times}10mm$.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.9
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• pp.862-876
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• 1991

In this theses, the procedure for finding the equivalent immittance of an n-line coupled structures is presented in terms of the normal mode parameters of the n-line coupled system. The above generalized equations can be applied to the various Coupled structures including directional couplers, DC blocks, bandpass/band elimination filters, and various other uniformly coupled filters. The design equations are based on a simplified TEM(Quasi TEM) mode. The obtained results and the definition of the scattering parameters for a general coupled line four port with arbitrary terminations are used to present the procedure to determine the optimum physical dimensions matching the given load impedances connected to input, output port. Multiple coupled rnicrostrip two-port with three lines circuit designed shows little discrepancy between the conventional method and this one. Four port with five lines were fabricated on teflon substrate($e$r=2.55) with its thickness h=l.588mm designed at the center frequency, 4 GHz. Their measured results are fairly close to the ones by computation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.9
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• pp.904-911
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• 2011

This paper deals with transmission characteristics of a new dual resonant structure for designing waveguide band-pass filter. The structure which has a pass-band between two adjacent stop-bands in a single body consists of circular ridged aperture and four armed conducting patch. The dual resonant behavior of the structure can be represented by a combination of LC series and parallel resonant circuits. Also these resonant properties can be easily controlled by varying the geometry of the aperture and four armed conducting patch. Actually, the structure is fabricated on the microstrip substrate by use of etching technique so that it is formed an iris type resonator which can be easily put into the transverse plane of the waveguide. We use WR-90 standard waveguide, adapters, and VNA(vector network analyzer) to measure the resonant characteristics of the structure. It is very useful to design and to improve the cutoff skirts characteristics in the waveguide band-pass filter design area.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.38 no.4
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• pp.20-30
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• 2001

A novel 200 MHz CMOS transconductor using translinear cells is proposed. The proposed transconductor consists of voltage followers and current followers based on translinear cells and a resistor. For wide applications, a single-input single-output, a single-Input differential-output, and a fully-differential transconductor are systematically designed, respectively. The theory of operation is described and computer simulation results are used to verify theoretical predictions. The results show that the fully-differential transconductor has a linear input voltage range of ${\pm}2.7$ V, a 3 dB frequency of 200 MHz, and a temperature coefficient of less than 41 $ppm/^{\circ}C$ at supply voltages of ${\pm}3$ V. In order to certify the applicability of the fully-differential transconductor, A ladder-type 3th-order cllitic low pass filter is also designed based on the inductance simulation method. The filter has a ripple bandwidth of 22 MHz, a pass-band ripple of 0.36 dB, and a cutoff frequency of 26 MHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.7B
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• pp.880-883
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• 2001

본 논문에서는 위상 잡음을 개선하기 위해서 Lesson의 위상 잡음 모델을 분석하여 이를 개선시키는 발진기의 구조를 제안하였다. 제안된 구조는 유전체 공진기를 사용한 대역통과 여파기, 평형 저 잡음 증폭기와 출력 전력을 격리시키기 위한 Branch-Line 전력 분배기로 구성되었다. 제안된 구조를 갖는 발진기는 12.653GHz에서 18.5dBm의 출력을 나타내었으며 위상잡음 특성은 중심주파수에서 10kHz 떨어진 곳에서 -82.6dBc/Hz를 나타내었다.

• 한국ITS학회:학술대회논문집
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• 2004.11a
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• pp.85-88
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• 2004