• The Journal of Engineering Geology
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• v.18 no.4
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• pp.577-586
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• 2008

The formation of acid mine drainage is closely related to water chemistry and ochreous sprecipitates formed at the bottom of creeks because it is initially derived from the possible water-rock interaction in abandoned waste metals at the mine. According to analyses on water, precipitates, and alteration characters of ore metals in Dalseone mine, whitish precipitates formed at pHs above 5 while schwertmannite formed at pH $3{\sim}4$. Water chemistry vary with seasons. The water chemistry of the treatment site measured ir Octoter 2002 is characterized by lower pH, and higher Al, Zn, Cu contents relative to those in March, 2003. In the latter case, As and Cl contents are very high. $^{27}Al$ MAS NMR data show the presence of predominant octahedral Al in whitish precipitates. Metal ore minerals dissolve at margins, cleavage, or comer of crystals where reactive sites are potential. Pyrite dissolves, forming etch pits or smooth faces on the edge.

• Analytical Science and Technology
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• v.17 no.1
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• pp.8-15
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• 2004

The detection efficiencies of the several solid track detectors were investigated for the determination of boron content in aqueous solution by using the alpha muti-Radioisotope(RI) source. Polycarbonate (Lexan and CR-39) and cellulose nitrate (CN-85 and LR-115) were selected as materials for alpha track detection of boron. Alpha muti-RI source, uranium metal particles and boron standard solution were used for alpha emission. In this study, four solid track detectors(CN-85, LR-115, Lexan and CR-39) were characterized under various etching conditions as well as neutron irradiation conditions. As a result, the CN-85 was turned out to be best to provide good efficiency among the four detectors. The selected solid track detector was utilized for the determination of trace amount of boron in aqueous sample and its results were discussed in the text.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.10A
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• pp.847-852
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• 2003

Apertures and PBG(Photonic Band Gap) has been employed on the ground plane in the coupled line filter simultaneously. In order to observe the maximum bandwidth, we used the line gap 0.2mm which is can be made in our lab. Band-pass filter type is four-stage coupled strip line filter. Teflon has been used for the substrate ($\varepsilon$$\sub$r/=3.2). The center frequency and the bandwidth are 2.18GHz and 230MHz, respectively. The bandwidth is broaden from 230MHz to 310MHz (80Mhz, about 34.7%) by aperture effect and harmonic frequencies are suppressed to 20-30dB by PBG effect. So the harmonic frequencies have been suppressed by the PBG effect and the bandwidth are broaden by aperture effect.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.161-168
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• 1998

Reactive ion etching process for InGaAs/InP using the CH4/H2 high density inductively coupled plasma was investigated. The experimental design method proposed by Taguchi was utilized to cover the whole parameter range while maintaining reasonable number of actual experiments. Results showed that the ICP power mainly affects surface roughness and verticality of the sidewall, bias power does etch rate and verticality, CH4 gas concentraion does the verticality and etch rate, and the distance between the induction coil and specimen mostly affects the surface roughness. It was also observed that the chamber pressure is the dominant parameter for the etch rate and verticality of the sidewall. The optimum condition was ICP power 700W, bias power 150 W, 15% $CH_4$, 7.5 mTorr, and 14 cm distance, resulting in about 3 $\mu\textrm{m}$/hr etch rate with smooth surfaces and vertical mesa sidewalls.

• Journal of the Korean Magnetics Society
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• v.25 no.5
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• pp.149-155
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• 2015

The ECR (Electron Cyclotron Resonance) Ar ion milling was manufactured to fabricate the device of thin film. The ECR ion milling system applied to the device etching operated by a power of 600W, a frequency of 2.45 GHz, and a wavelength of 12.24 cm and transferred by a designed waveguide. In order to match one resonant frequency, a magnetic field of 908 G was applied to a cavity inside of ECR. The Ar gas intruded into a cavity and created the discharged ion beam. The surface of target material was etched by the ion beam having an acceleration voltage of 1000 V. The formed devices with a width of $1{\mu}m{\sim}9{\mu}m$ on the GMR-SV (Giant magnetoresistance-spin valve) multilayer after three major processes such as photo lithography, ion milling, and electrode fabrication were observed by the optical microscope.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.2
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• pp.66-72
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• 2020

The difference of plasma resistance between the CAS glass bulk and coating films were compared. Plasma resistance was confirmed by analyzing the etch rate and the microstructure of the surface when the CAS glass bulk and the glass coating film were etched with CF₄/O₂/Ar plasma gas. CAS glass coating film was etched up to 25 times faster than the glass bulk. A statistically high correlation between the surface roughness and the etching rate of the coating film was derived, and thus, the high surface roughness of the coating film was determined to cause rapid etching. In addition, cristobalite crystals that has a low Ca content and a high Si content, was foamed on the glass coating film. Therefore, the CAS glass coating film is considered to have low plasma resistance compared to the glass bulk.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.79-84
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• 2014

To investigate the plating properties of a diethylene glycol-based Ag immersion plating solution containing citric acid, silver immersion plating was performed in a range from room temperature to $50^{\circ}C$ using sputtered Cu specimens. The used Cu specimens possessed surface structure with large numbers of pinholes which were created with over-acid etching. The Ag immersion plating performed at $40^{\circ}C$ exhibited that the pinholes and copper surface were completely filled with Ag just after 5 min mainly due to galvanic displacement reaction, indicating the best plating properties. Subsequently, the surface morphology of Ag-coated Cu became rougher as the plating time increased to 30 min because of the deposition of silver nanoparticles created by chemical reduction in the solution. The specimen that its overall surface was covered with silver indicated the start of oxidation at temperature higher than around $50^{\circ}C$ in air as compared with pure Cu, indicating enhanced anti-oxidation properties.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.114-119
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• 2004

Silicon Nitride thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method at $550^{\circ}C$ using alternating exposures of $SiH_2Cl_2$ and $NH_3$, and the physical and electrical propeties of the deposited films were characterized. The thickness of the films was linearly increased with the number of deposition cycles, and the growth rate of the films was 0.13 nm/cycle with the reactant exposures of $3.0\times10^{9}$ L. The silicon nitride thin films deposited by Alf exhibited similar physical properties with the silicon nitride thin films deposited by low-pressure chemical vapor deposition (LPCVD) method in terms of refractive index and wet etch rate, lowering deposition temperature by more than 200 $^{\circ}C$. The ALD films showed the leakage current density of 0.79 nA/$\textrm{cm}^2$ at 3 MV/cm, which is lower than 6.95 nA/$\textrm{cm}^2$ of the LPCVD films under the same condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.257-257
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• 2007

고밀도 FeRAM (Ferroe!ectric Random Access Memory) 소자를 개발하기 위해서는 강유전체 물질을 이용한 안정적인 스텍형의 커패시터 개발이 필수적이다. 특히 $(Bi,La)_4Ti_3O_{12}$ (BLT) 강유전체 물질을 이용하는 경우에는 낮은 열처리 온도에서도 균질하고 높은 값의 잔류 분극 값을 확보하는 것이 가장 중요한 과제 중의 하나이다. 불행히도, BLT 물질은 a-축으로는 약 $50\;{\mu}C/cm^2$ 정도의 높은 잔류 분극 값을 갖지만, c-축 방향으로는 $4\;{\mu}C/cm^2$ 정도의 낮은 잔류 분극 값을 나타내는 동의 강한 비등방성 특성을 보인다. 따라서 BLT 박막에서 각각 입자들의 크기 및 결정 방향성을 세밀하게 제어하는 것은 무엇보다 중요하다. 본 연구에서는 16 Mb의 1T/1C (1-transistor/1-capacitor) 형의 FeRAM 소자를 BLT 박막을 적용하여 제작하였다. 솔-젤 (sol-gel) 용액을 이용하여 스핀코팅법으로 BLT 박막을 증착하고, 후속 열처리 공정을 RTP (rapid thermal process) 공정을 이용하여 수행하였다. 커패시터의 하부 전극 및 상부 전극은 각각 Pt/IrOx/lr 및 Pt을 적용하였다. 반응성 이온 에칭 (RIE: reactive ion etching) 공정을 이용하여 커패시터를 형성시킨 후, 32k-array (unit capacitor: $0.68\;{\mu}m$) 패턴에서 측정한 스위칭 분극 (dP=P*-P^) 값은 약 $16\;{\mu}C/cm^2$ 정도이고, 웨이퍼 내에서의 균일도도 2.8% 정도로 매우 우수한 특성을 보였다. 그러나 단위 셀들의 특성을 평가하기 위하여 bit-line의 전압을 측정한 결과, 약 10% 정도의 커패시터에서 불량이 발생하였다. 그리고 이러한 불량 젤들은 매우 불규칙적으로 분포함을 확인할 수 있었다. 이러한 불량 원인을 파악하기 위하여 양호한 젤과 불량이 발생한 셀에서의 BLT 박막의 미세구조를 분석하였다. 양호한 셀의 BLT 박막 입자들은 불량한 셀에 비하여 작고 비교적 균일한 크기를 갖고 있었다. 이에 비하여 불량한 셀에서의 BLT 박막에는 과대 성장한 입자들이 존재하고 이에 따라서 입자 크기가 매우 불균질한 것으로 확인되었다. 또 이러한 과대 성장한 입자들은 거의 모두 c-축 배향성을 나타내었다. 이상의 실험 결과들로부터, BLT 박막을 이용하여 제작한 FeRAM 소자에서 발생하는 불규칙한 셀 불량의 주된 원인은 c-축 배향성을 갖는 과대 성장한 입자의 생성임을 알 수 있었다. 즉 BLT 박막을 이용하여 FeRAM 소자를 제작하는 경우, 균일한 크기의 입자 및 c-축 배향성의 입자 억제가 매우 중요한 기술적 요소임을 알 수 있었다.

• Journal of the Korean Geographical Society
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• v.41 no.3 s.114
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• pp.331-345
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• 2006

This study deals with geomorphological process of the sand dune landform including the distribution and surface environments, characteristics of sediments, origins and moving processes in lower reach and mouth delta of Duman River, Northeast Korea and China. The methodology of the study includes image analysis of Landsat TM(1992.10) and ETM(2000.9) and Spot(2005.4) for analysis of land cover, 2 times field survey for recognition of landform and acquisition of sediments raw data materials, and grain analysis and exoscopy about raw data materials. The geomorphic elements from satellite image analysis are composed of the delta, sand spit, active and stable dune, sand bar and riparian vegetated zone. Results of the grain analysis indicate the sediments originated from marine coastal zone than riverine one. This means that present sand dune not so much reflect present climatic and geomorphic environments. Result of the exoscopy analysis show that ratio of quartz, which is comparatively resistant to environment, is highest as $65{\sim}83%$ out of sediments. But the surface of the $30{\sim}40%$ of mineral grains was coated by yellow-colored stained materials, due to chemical weathering. Some grains show rough skin, looking as acicular, network structure and etching pits, affected by physical and chemical weathering.