• Membrane Journal
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• v.19 no.4
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• pp.317-323
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• 2009

In this study the nanofiltration (NF) membrane treatment of a nitric acid waste solutions containing $Pb^{+2}$ heavy metal ion discharging from the etching processes of an electronics and semiconductors industry has been studied for the purpose of recycling of nitric acid etching solutions. Three kinds of NF membranes (General Electric Co. Duraslick NF-4040 membrane, Dow Co. Filmtec LP-4040 membrane and Koch Co. SelRO MPS-34 4040 membrane) were tested for their separation efficiency (total rejection) of $Pb^{+2}$ ion and membrane stability in nitric acid solution. NF experiments were carried out with a dead-end membrane filtration laboratory system. The membrane permeate flux was increased with the increasing storage time in nitric acid solution and lowering pH of acid solution because of the enhancing of NF membrane damage by nitric acid. The membrane stability in nitric acid solution was more superior in the order of Filmtec LP-4040 < Duraslick NF-4040 < SelRO MPS-34 4040 membrane. The total rejection of Pb+2 ion was decreased with the increasing storage time in nitric acid solution and lowering the pH of acid solution. The total rejection of $Pb^{+2}$ ion after 4 months NF treatment was decreased from 95% initial value to 20% in the case of Duraslick NF-4040 membrane, from 85% initial value to 65% in the case of SelRO MPS-34 4040 membrane and from 90% initial value to 10% in the case of Filmtec LP-4040 membrane. These results showed that SelRO MPS-34 4040 NF membrane was more suitable for the treatment of an acidic etching waste solutions containing heavy metal ions.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.4
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• pp.650-656
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• 2018

The TFT-LCD industry is a kind of large-scale industrial Giant Microelectronics device industry and has a similar semiconductor process technology. Wet etching forms a relatively large proportion of the entire TFT process, but the number of published research papers on this topic is limited. The main reason for this is that the components of the etchant, in which the reaction takes place, are confidential and rarely publicized. Aluminum (Al) and copper (Cu), which have been used in recent years for the manufacture of large area LCDs, are very difficult materials to process using wet etching. Cu, a low-resistance material, can only be used in the wet etching process, and is used as a substitute for Al due to its high speed etching, low failure rate, and low power consumption. Further, the abnormal reaction of hydrogen peroxide ($H_2O_2$), which is used as an etching solution, requires additional piping and electrical safety devices. This paper proposes a method of minimizing the damage to the plant in the case of adverse reactions, though it cannot limit the adverse reaction of hydrogen peroxide. In recent years, there have been many cases in which aluminum etching equipment has been changed to copper. This paper presents a countermeasure against abnormal reactions by implementing safety PLC with a high safety grade.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.4
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• pp.77-82
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• 2022

During etching process of PCB, the electroplated copper line and seed layer copper have different etching rates and it caused the over etching of copper line as well as undercut of lines. In this research, the effects of etchants composition on copper etching characteristics were investigated. The optimum concentration of hydrogen peroxide and sulfuric acid of etchants were obtained using polarization and OCV (open circuit voltage) analysis for both rolled copper and electroplated copper. The inhibiting effects of different inhibitors were investigated using OCV and ZRA (zero resistance ammeter) analysis. The galvanic current between electroplated copper and seed layer copper were measured using ZRA method. Inhibitors for least galvanic current could be chosen based on galvanic coupling in ZRA analysis.

• Plant Journal
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• v.5 no.2
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• pp.6-13
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• 2009

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.548-549
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• 2007

과거 PCB 제조의 주된 화제는 다양한 산업분야의 발전을 위해 한정된 시간 안에 좀 더 많은 PCB를 양산하는 기술 개발에 집중되어 있었지만, 현재는 비정상적인 공정 상태를 파악함으로써 제조 공정 환경에서의 오류를 줄여 전체 수률을 높이는 방법에 시선을 돌리고 있다. PCB 에칭의 경우 에칭 용액의 상태를 실시간으로 모니터링 하는 것이 중요하다. 본 논문에서는 기존 애칭용액의 상태를 판단할 때 사용되는 ORP 센서 대신, RGB 센서를 이용하여 실시간으로 용액의 상태를 모니터링 할 수 있는 시스템을 개발 하였다. 개발된 시스템을 이용하여 기존 ORP 시스템과의 비교 분석을 및 RGB 센서률 이용한 모니터링 방법이 ORP 센서를 이용한 방법 보다 좀 더 쉽고 정확하게 에칭 액의 상태를 모니터링할 수 있다는 것을 확인 하였다.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.14 no.4
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• pp.323-327
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• 2021

This paper produced SUS MASK, which is used for OLEDs, using an automatic liquid management system. The SUS MASK was tested by setting the hole diameter to 0.4 mm. The additive F300 was found to be excellent as the hole diameter was close to 0.4 mm and the error range was measured to be 0.08 on average. And as a result of measuring the weight reduction amount of CuCl2 and FeCl3 according to the change in oxidation-reduction potential (ORP), FeCl3 is relatively sensitive to ORP changes. Experiments were conducted on whether ORP (610 mV) and specific gravity (1.463) were automatically controlled while continuously etching the SUS Mask. Experimental results show that the automatic liquid management system is well controlled because the setting value is not significantly changed. After setting the hole diameter to 0.4 mm as the target, the experiment results were measured from 0.36 to 0.44. Therefore, it is expected that etching processing in the manufacturing process of SUS MASK can be improved with higher precision by applying the manufactured automatic liquid management system.

• Resources Recycling
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• v.26 no.2
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• pp.18-24
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• 2017

The $FeCl_3$ solution has been used as an etchant for etching of metal. It is necessary to reuse the etching solution because waste $FeCl_3$ etchant generated after use has provided environmental and economic problems. In this study, HCl was mixed with the $FeCl_2$ solution and then $H_2O_2$ was added into the mixed solution to oxidize the $Fe^{2+}$. During the oxidation process, oxidation-reduction potential (ORP) was measured and the relationship between ORP and oxidation ratio was investigated. As a result, this study found that the ORP was increased with increasing the concentration of HCl and $H_2O_2$, while the ORP is decreased with oxidation progress. Such a behavior was in good agreement with Nernst's equation. Also, the oxidation efficiency reached about 99% when a sufficient amount of HCl and $H_2O_2$ were added.

• Journal of the Speleological Society of Korea
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• no.79
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• pp.73-75
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• 2007

과거 PCB 제조의 주된 화제는 다양한 산업분야의 발전을 위해 한정된 시간 안에 좀 더 많은 PCB를 양산하는 기술 개발에 집중되어 있었지만, 현재는 비정상적인 공정 상태를 파악함으로써 제조 공정 환경에서의 오류를 줄여 전체 수율을 높이는 방법에 시선을 돌리고 있다. PCB 에칭의 경우 에칭 용액의 상태를 실시간으로 모니터링 하는 것이 중요하다. 본 논문에서는 기존 애칭용액의 상태를 판단할 때 사용되는 ORP센서 대신, RGB센서를 이용하여 실시간으로 용액의 상태를 모니터링 할 수 있는 시스템을 개발하였다. 개발된 시스템을 이용하여, 기존 ORP시스템과의 비교 분석을 및 RGB 센서를 이용한 모니터링 방법이 ORP센서를 이용한 방법 보다 좀 더 쉽고 정확하게 에칭 액의 상태를 모니터링 할 수 있다는 것을 확인하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.5
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• pp.196-201
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• 2014

We investigated defects and surface polarity in AlN and GaN by using wet chemical etching. Therefore, the effectiveness and reliability of estimating the single crystals by defect selective etching in NaOH/KOH eutectic alloy have been successfully demonstrated. High-quality AlN and GaN single crystals were etched in molten NaOH/KOH eutectic alloy. The etching characteristics and surface morphologies were carried out by scanning electron microscope (SEM) and atomic force microscope (AFM). The etch rates of AlN and GaN surface were calculated by etching depth as a function of etching time. As a result, two-types of etch pits with different sizes were revealed on AlN and GaN surface, respectively. Etching produced hexagonal pits on the metal-face (Al, Ga) (0001) plane, while hexagonal hillocks formed on the N-face. On etching rate calibration, it was found that N-face had approximately 109 and 15 times higher etch rate than the metal-face of AlN and GaN, respectively. The size of etch pits increased with an increase of the etching time and they tend to merge together with a neighbouring etch pits. Also, the chemical mechanism of each etching process was discussed. It was found that hydroxide ion ($OH^-$) and the dangling bond of nitrogen play an important role in the selective etching of the metal-face and N-face.

• Korean Journal of Materials Research
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• v.11 no.1
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• pp.48-54
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• 2001

The effects of additives in the HCI etching solution on etching behaviors of aluminum foil as dielectric film for electrolytic capacitors were investigated. The etch pits formed in 1M hydrochloric acid containing ethylene glycol as an additive contain more fine and homogeneous etch tunnels compared to those in 1 M hydrochloric acid only, which led to the increase in the effective internal surface area of aluminum foil. After anodizing of aluminum foil etched in etching solutions, the LCR meter results have shown that the capacitance of dielectric film etched in hydrochloric acid with ethylene glycol was increased remarkably compared to that etched in hydrochloric acid only.