• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.5
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• pp.174-182
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• 2020

The printed electronics field using ink-jet printing technology is in the spotlight as a next-generation technology, especially ink-jet 3D printing, which can simultaneously discharge and precisely control various ink materials, has been actively researched in recent years. In this study, complex structure of an insulating layer and a conductive layer was fabricated with photo-curable silica ink and PVP-added Cu nano ink using ink-jet 3D printing technology. A precise photocured silica insulating layer was designed by optimizing the printing conditions and the rheological properties of the ink, and the resistance of the insulating layer was 2.43 × 10¹³ Ω·cm. On the photo-cured silica insulating layer, a Cu conductive layer was printed by controlling droplet distance. The sintering of the PVP-added nano Cu ink was performed using an IPL flash sintering process, and electrical and mechanical properties were confirmed according to the annealing temperature and applied voltage. Finally, it was confirmed that the resistance of the PVP-added Cu conductive layer was very low as 29 μΩ·cm under 100℃ annealing temperature and 700 V of IPL applied voltage, and the adhesion to the photo-cured silica insulating layer was very good.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.65-74
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• 2013

The through-silicon via (TSV) technology is essential for 3-dimensional integrated packaging. TSV technology, however, is still facing several reliability issues including interfacial delamination, crack generation and Cu protrusion. These reliability issues are attributed to themo-mechanical stress mainly caused by a large CTE mismatch between Cu via and surrounding Si. In this study, the thermo-mechanical reliability of copper TSV technology is investigated using numerical analysis. Finite element analysis (FEA) was conducted to analyze three dimensional distribution of the thermal stress and strain near the TSV and the silicon wafer. Several parametric studies were conducted, including the effect of via diameter, via-to-via spacing, and via density on TSV stress. In addition, effects of annealing temperature and via size on Cu protrusion were analyzed. To improve the reliability of the Cu TSV, small diameter via and less via density with proper via-to-via spacing were desirable. To reduce Cu protrusion, smaller via and lower fabrication temperature were recommended. These simulation results will help to understand the thermo-mechanical reliability issues, and provide the design guideline of TSV structure.

• Composites Research
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• v.26 no.2
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• pp.123-128
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• 2013

The PVDF (polyvinylidene fluoride) fibers were prepared using the wet spinning processing. To improve ${\beta}$-phase crystalline which closely related piezoelectric property PVDF wet spun fibers conducted post treatment. Post treatment is consisted of heat stretching and annealing process. The heat stretching and annealing conditions were controlled by changing temperature between glass transition temperature and melting temperature. From these experimental data, the resulting crystal structure of the ${\beta}$-phase crystalline was confirmed by FT-IR and XRD experiments. From these analysis results, optimum stretching and annealing conditions of the wet spun PVDF fibers were founded to increase high ${\beta}$-phase crystalline. Furthermore results showed that thermal processing had a direct effect on modifying the crystalline microstructure and also confirmed that heat stretching and annealing could increase the degree of crystallinity and ${\beta}$-phase crystalline. Finally, piezoelectric constant ($d_{11}$) of the post heat treated PVDF fibers reinforced composite were measured to investigate the feasibility for the sensing materials.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.493-498
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• 1998

CdTe films were deposited by close spaced sublimation with various substrate temperatures, cell areas, and thicknesses of CdTe and ITO layers and their effects on the CdS/CdTe solar cells were investigated. The resistivity of CdTe layers employed in this study was 3$\times$ $10^{4}$$\Omega$cm For constant substrate temperature the optimum substrate ternperature for CdTe deposition was $600^{\circ}C$. To obtain larger grain size and more compact microstructure, CdTe film was initially deposited at 62$0^{\circ}C$, and then deposited at 54$0^{\circ}C$. The CdTe film was annealed at 62$0^{\circ}C$ and $600^{\circ}C$ sequentially to maintain the CdTe film quality. The photovoitaic cell efficiency improved by the "two-wave" process. For constant substrate temperature, the optimum thickness for CdTe was 5-6$\mu m$. Above 6$\mu m$ CdTe thickness, the bulk resistance of CdTe film degraded the cell performance. As the cell area increased the $V_{oc}$ remained almost constant, while $J_{sc}$ and FF strongly decreased because of the increase of lateral resistance of the ITO layer. The optimum thickness of the ITa layer in this study was 300~450nm. In this experiment we obtained the efficiency of 9.4% in the O.5cm' cells. The series resistance of the cell should be further reduced to increase the fill factor and improve the efficiency.

• Transactions of Materials Processing
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• v.14 no.8 s.80
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• pp.696-703
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• 2005

In the modern days, a galvannealed sheet steel (GA) instead of a cold rolled steel sheet has been widely used as an alternative to extend the life of automotive body. Accordingly, the mechanical properties of GA for automobiles were taken into account and studied by examining their variation with annealing temperature. To clarify the effect of surface features on the mechanical and frictional properties of GA, the several tests such as nanoindentation, Vickers hardness and nano scratch test were executed. The frictional characteristics of coating layers of GA were examined through nano scratch test in this study. The friction coefficient of coating layers on the surface was obtained from the nano scratch. The variation of friction coefficient versus velocity and pressure was taken into consideration in this paper. Hardness and elastic modulus of coating layer were increased as increasing annealing temperature.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.113-117
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• 2005

In the modern days, a galvannealed sheet steel (GA) instead of a cold rolled steel sheet has been widely used as an alternative to extend the life of automotive body. Accordingly, the mechanical properties of GA for automobiles were taken into account and studied by comparing with the temperature variation on annealing in this study. To clarify the effect of surface features in the mechanical and frictional properties of GA, the several tests such as nanoindentation, victors hardness and nano scratch test were executed. The developed neural networks apply also to obtain reliable mechanical properties of the thin films. Load-displacement curve was computed by the analysis procedure and compared with experimental results. The frictional characteristics of coating layers in GA were verified though nano scratch test in this study. The friction coefficient of coating layers on the surface was obtained from the nano scratch. The variation of friction coefficient versus velocity and pressure was taken into consideration in this paper.

• Journal of the Semiconductor & Display Technology
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• v.15 no.2
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• pp.11-15
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• 2016

This paper, Ga-doped ZnO (GZO) thin films which were deposited on Corning glass substrate using an magnetron sputtering deposition technology and then the post deposition annealing process was conducted for 30 minutes at different temperature of 100, 200, 300, and $400^{\circ}C$, respectively. So as to investigate the properties for the relevant the Concentration and Oxygen Vacancy with Annealing temperature of Ga-doped ZnO thin films by RF Sputtering method. The Carrier concentration is enhanced as annealing temperature decreases, and also the oxygen vacancy concentration is enhanced as annealing temperature decreased. Oxygen vacancy will decrease along with Carrier concentration. This change in Carrier concentration is related to changes in oxygen vacancy concentration. The figure of merit obtained in this study means that Ga-doped ZnO films which annealed at $400^{\circ}C$ have the lowest Carrier concentration and Oxygen vacancy, which have the highest optoelectrical performance that it could be used as a transparent electrode.

• Korean Journal of Metals and Materials
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• v.46 no.9
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• pp.563-571
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• 2008

The influence of annealing treatment on dynamic deformation behavior of ultra-fine grained aluminum alloys was investigated in this study. After equal-channel angular pressing at $200^{\circ}C$, most of the grains were considerably reduced to nearly equiaxed grains of $0.3{\mu}m$ in size. With an increment of various annealing treatments for 1 hour, resultant microstructures were found to be fairly stable at temperatures up to $200^{\circ}C$, suggesting that static recovery would be dominantly operative, whereas grain growth was pronounced above $250^{\circ}C$. The tensile test results showed that yield and ultimate tensile strengths decreased, but elongation-to-failure and strain hardening rate increased with increasing annealing temperature. The dynamic deformation behavior retrieved with a series of torsional tests was explored with respect to annealed microstructures. Such mechanical response was analyzed in relation to resultant microstructure and fracture mode.

• Journal of the Korean Society for Heat Treatment
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• v.37 no.2
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• pp.58-65
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• 2024

In the present study, the effect of annealing condition on the microstructures and mechanical properties of the cold-rolled CoCrFeMnNi high entropy alloys were studied. Annealing treatment was performed under six different temperatures. Microstructural analyses confirmed that annealing below 800℃ resulted in the formation of intermetallic sigma (σ) phase within face-centered cubic (FCC) matrix, and this σ phase has beneficial effects on the formation of fine-grained structures through retardation of grain growth and recrystallization due to Zener pinning effect. This led to the enhanced yield strength and tensile strength of ~646 and ~855 MPa, respectively. The microstructures annealed above 800℃ demonstrated single FCC phase, and fully-recrystallized single FCC microstructure resulted in a slight increase in ductility with a considerable decrease in strength. The evolution of mechanical properties, such as strength, ductility, and strain hardening exponent, will be discussed.

• Journal of the Korean Magnetics Society
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• v.4 no.4
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• pp.319-325
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• 1994

Permalloy films were deposited by an RF magnetron sputtering method using several different targets which had been cold-rolled and annealed at various temperatures to give different microstructure and texture. The grain refinement occurs at high temperature annealing due to recrystallization and subsequently the initial (110) target texture transforms to the random texture. The coercive forces of thin films fabricated using targets which are not recrystallized are below 0.2 Oe in the AI pressure range of 1~5 mTorr and the lowest coercive force achieved is 0.07 Oe. The low value of coercive force, 0.25 Oe, is only obtained at the sputtering conditions of 400 W and 1 mTorr, and 300 W and 5 mTorr when recrystallized targets are used. The internal stress changes from compressive to tensile as the Ar pressure increases, the stress-free being at 5 mTorr. The changes of coercive force and permeability can be well interpreted by the differences from the composition and the internal stress.