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http://dx.doi.org/10.6111/JKCGCT.2020.30.5.174

Rheological behavior and IPL sintering properties of conductive nano copper ink using ink-jet printing  

Lee, Jae-Young (Icheon Branch, Korea Institute of Ceramic Engineering & Technology)
Lee, Do Kyeong (Icheon Branch, Korea Institute of Ceramic Engineering & Technology)
Nahm, Sahn (Department of Material Science and Engineering, Korea University)
Choi, Jung-Hoon (Icheon Branch, Korea Institute of Ceramic Engineering & Technology)
Hwang, Kwang-Taek (Icheon Branch, Korea Institute of Ceramic Engineering & Technology)
Kim, Jin-Ho (Icheon Branch, Korea Institute of Ceramic Engineering & Technology)
Abstract
The printed electronics field using ink-jet printing technology is in the spotlight as a next-generation technology, especially ink-jet 3D printing, which can simultaneously discharge and precisely control various ink materials, has been actively researched in recent years. In this study, complex structure of an insulating layer and a conductive layer was fabricated with photo-curable silica ink and PVP-added Cu nano ink using ink-jet 3D printing technology. A precise photocured silica insulating layer was designed by optimizing the printing conditions and the rheological properties of the ink, and the resistance of the insulating layer was 2.43 × 1013 Ω·cm. On the photo-cured silica insulating layer, a Cu conductive layer was printed by controlling droplet distance. The sintering of the PVP-added nano Cu ink was performed using an IPL flash sintering process, and electrical and mechanical properties were confirmed according to the annealing temperature and applied voltage. Finally, it was confirmed that the resistance of the PVP-added Cu conductive layer was very low as 29 μΩ·cm under 100℃ annealing temperature and 700 V of IPL applied voltage, and the adhesion to the photo-cured silica insulating layer was very good.
Keywords
Ink-jet 3D printing; IPL flashing sintering; Rheological properties; Photo-curable silica ink; PVP-added nano Cu ink;
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Times Cited By KSCI : 5  (Citation Analysis)
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