• Journal of the Korean Society for Precision Engineering
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• v.27 no.2
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• pp.13-19
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• 2010

Due to the rapid spread of mobile handheld devices, industrial demands for micro-scale holes with a diameter of even smaller than $10{\mu}m$ in sapphire/silicon wafers have been increasing. Holes in sapphire wafers are for heat dissipation from LEDs; and those in silicon wafers for interlayer communication in three-dimensional integrated circuit (IC). We have developed a sapphire wafer driller equipped with a 532nm laser in which a cooling chuck is employed to minimize local heat accumulation in wafer. Through the optimization of process parameters (pulse energy, repetition rate, number of pulses), quality holes with a diameter of $30{\mu}m$ and a depth of $100{\mu}m$ can be drilled at a rate of 30holes/sec. We also have developed a silicon wafer driller equipped with a 355nm laser. It is able to drill quality through-holes of $15{\mu}m$ in diameter and $150{\mu}m$ in depth at a rate of 100holes/sec.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.11
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• pp.83-93
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• 2014

It is a widespread concern that electrical interconnection based network-on-chip (NoC) will ultimately face the limitation in communication bandwidth, transmission latency and power consumption in the near future. With the development of silicon photonics technology, a hybrid optical network-on-chip (HONoC) which embraces both electrical- and optical interconnect, is emerging as a promising solution to overcome these problems. Today's leading edge systems-on-chips (SoCs) comprise heterogeneous many-cores for higher energy efficiency, therefore, extended study beyond regular topology based NoC is required. This paper proposes an energy and latency optimization topology design technique for HONoC taking into account the traffic characteristics of target applications. The proposed technique is implemented with genetic algorithm and simulation results show the reduction by 13.84% in power loss and 28.14% in average latency, respectively.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.1
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• pp.225-234
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• 2019

By using the Triboelectric nanogenerators, known as TENG, we can take advantages of high conversion efficiency and continuous power output even with small vibrating energy sources. Nonlinear energy extraction techniques for Triboelectric vibration energy harvesting usually requires synchronized active electronic switches in most electronic interface circuits. This study presents a nonlinear energy harvesting with high energy conversion efficiency to harvest and save energies from human active motions. Moreover, the proposed design can harvest and store energy from sway motions around different directions on a horizontal plane efficiently. Finally, we conducted a comparative analysis of a multi-mode energy storage board developed by a silicon-based piezoelectricity and a transparent TENG cell. As a result, the experiment showed power generation of about 49.2mW/count from theses multi-fully harvesting source with provision of stable energy storages.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.11
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• pp.1-7
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• 2018

In a microcolumn, a miniaturized electrostatic deflector is often adopted to scan an electron beam. Usually, a double octupole deflector is used because it can avoid excessive spherical aberrations by controlling the electron beam path close to the optical axis of the objective lens and has a wide scan field. Studies on microcolumns have been performed to improve the low throughput of an electron column through multiple column applications. On the other hand, as the number of microcolumns increases, the number of wires connected to the components of the microcolumn increases. This will result in practical problems during the process of connecting the wires to electronic controllers outside of the vacuum chamber. To reduce this problem, modified quadrupole and octupole deflectors were examined through simulation analysis by selecting an ultraminiaturized microcolumn with the Einzel lens eliminated. The modified deflectors were designed changing the size of each electrode of the conventional Si octupole deflector. The variations of the scan field and electric field strength were studied by changing the size of active electrodes to which the deflection voltage was to be applied. The scan field increased linearly with increasing deflection voltage. The scan field of the quadrupole deflector and the electric field strength at the center were calculated to be approximately 1.3 ~ 2.0 times larger than those of the octupole deflector depending on the electrode size.