• Title/Summary/Keyword: 신뢰성 성장(reliability growth)

Search Result 166, Processing Time 0.026 seconds

Properties of Cu Pillar Bump Joints during Isothermal Aging (등온 시효 처리에 따른 Cu Pillar Bump 접합부 특성)

  • Eun-Su Jang;Eun-Chae Noh;So-Jeong Na;Jeong-Won Yoon
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.31 no.1
    • /
    • pp.35-42
    • /
    • 2024
  • Recently, with the miniaturization and high integration of semiconductor chips, the bump bridge phenomenon caused by fine pitches is drawing attention as a problem. Accordingly, Cu pillar bump, which can minimize the bump bridge phenomenon, is widely applied in the semiconductor package industry for fine pitch applications. When exposed to a high-temperature environment, the thickness of the intermetallic compound (IMC) formed at the joint interface increases, and at the same time, Kirkendall void is formed and grown inside some IMC/Cu and IMC interfaces. Therefore, it is important to control the excessive growth of IMC and the formation and growth of Kirkendall voids because they weaken the mechanical reliability of the joints. Therefore, in this study, isothermal aging evaluation of Cu pillar bump joints with a CS (Cu+ Sn-1.8Ag Solder) structure was performed and the corresponding results was reported.

Electroless plating of buried contact solar cell (전극함몰형 태양전지의 무전해도금)

  • Dong Seop Kim;Eun Chel Cho;Soo Hong Lee
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.6 no.1
    • /
    • pp.88-97
    • /
    • 1996
  • The metallization is the key to determining cell costs, cell performance, and system reliability. Screen printing technology suffers from several limitations affecting mainly the front grid. The buried contact solar cell (BCSC) was specifically desinged to be compatible with low cost, mass production techniques and avoid the conventional metallization problem. By using electroless plating technique, we performed this metallization inexpensively and reliably. This paper presents the details of the optimization procedure of metallization schemes on laser grooved cell surfaces. Commercially available Ni, Cu and Ag plating solutions were applied for the cell metallization. The application of those solutions on the buried contact front metallization has resulted in an cell efficiency of 18.8%. The cell parameters are an open circuit voltage of 651 mV, short circuit current density of 37.1 mA/$\textrm{cm}^2$, and fill factor of 77.8 %. The efficiency of over 18 % was achieved in the above 90% of the batch.

  • PDF

A Study on Integrated Safety Management System of LNG Storage/Transport Facilities (LNG 저장/수송 시설의 통합 안전 관리 시스템 개발에 관한 연구)

  • Lee, Sang-Ho;Lim, Young-Sub;Han, Chong-Hun
    • Journal of the Korean Institute of Gas
    • /
    • v.12 no.3
    • /
    • pp.1-6
    • /
    • 2008
  • The safety management of the LNG industry which shows huge growth recently, become an essential element. So the necessity of development for the pre-existing LNG storage/transport facility has been shown up and the improvement of information technology (IT) of these days make it possible to synthesize several models for integrated LNG facilitiy safety management system. This system will contains risk analysis/assessment technology, explosion, leakage and diffusion model construction technology, real-time monitoring and fault diagnosis technology, and reliability progression technology of process information through data reconciliation. The final integrated safety management system will contribute the increase of LNG industry's safety and exportation of technique.

  • PDF

Effect of NCF Trap on Electromigration Characteristics of Cu/Ni/Sn-Ag Microbumps (NCF Trap이 Cu/Ni/Sn-Ag 미세범프의 Electromigration 특성에 미치는 영향 분석)

  • Ryu, Hyodong;Lee, Byeong-Rok;Kim, Jun-beom;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.25 no.4
    • /
    • pp.83-88
    • /
    • 2018
  • The electromigration (EM) tests were performed at $150^{\circ}C$ with $1.5{\times}10^5A/cm^2$ conditions in order to investigate the effect of non-conductive film (NCF) trap on the electrical reliability of Cu/Ni/Sn-Ag microbumps. The EM failure time of Cu/Ni/Sn-Ag microbump with NCF trap was around 8 times shorter than Cu/Ni/Sn-Ag microbump without NCF trap. From systematic analysis on the electrical resistance and failed interfaces, the trapped NCF-induced voids at the Sn-Ag/Ni-Sn intermetallic compound interface lead to faster EM void growth and earlier open failure.

Intermetallic Compound Growth Characteristics of Cu/Ni/Au/Sn-Ag/Cu Micro-bump for 3-D IC Packages (3차원 적층 패키지를 위한 Cu/Ni/Au/Sn-Ag/Cu 미세 범프 구조의 열처리에 따른 금속간 화합물 성장 거동 분석)

  • Kim, Jun-Beom;Kim, Sung-Hyuk;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.20 no.2
    • /
    • pp.59-64
    • /
    • 2013
  • In-situ annealing tests of Cu/Ni/Au/Sn-Ag/Cu micro-bump for 3D IC package were performed in an scanning electron microscope chamber at $135-170^{\circ}C$ in order to investigate the growth kinetics of intermetallic compound (IMC). The IMC growth behaviors of both $Cu_3Sn$ and $(Cu,Ni,Au)_6Sn_5$ follow linear relationship with the square root of the annealing time, which could be understood by the dominant diffusion mechanism. Two IMC phases with slightly different compositions, that is, $(Cu,Au^a)_6Sn_5$ and $(Cu,Au^b)_6Sn_5$ formed at Cu/solder interface after bonding and grew with increased annealing time. By the way, $Cu_3Sn$ and $(Cu,Au^b)_6Sn_5$ phases formed at the interfaces between $(Cu,Ni,Au)_6Sn_5$ and Ni/Sn, respectively, and both grew with increased annealing time. The activation energies for $Cu_3Sn$ and $(Cu,Ni,Au)_6Sn_5$ IMC growths during annealing were 0.69 and 0.84 eV, respectively, where Ni layer seems to serve as diffusion barrier for extensive Cu-Sn IMC formation which is expected to contribute to the improvement of electrical reliability of micro-bump.

The Effects of Social Tourism Information Platform on Experience Value and e-Loyalty of Visitors to Tourism Information (관광정보 이용객이 지각하는 소셜관광정보플랫폼이 경험가치 및 e-충성도에 미치는 영향)

  • Yoon, Dae-Gyun
    • Journal of Korea Entertainment Industry Association
    • /
    • v.14 no.3
    • /
    • pp.15-26
    • /
    • 2020
  • This study examined the effects of a social tourism information platform on platform users' experiential value and e-loyalty and performed an empirical analysis with the aim to propose methods and implications regarding what strategies can enable practical application for sustainable growth in the operation of a social tourism information platform in the future tourism industry. The results of the analysis are as follows. First, the analysis supported the hypothesis that sub-factors of a social tourism information platform, such as interactivity, information reliability, and usefulness, have statistically significant positive effects on experiential value. Second, the analysis did not support the hypothesis that the sub-factors of a social tourism information platform, such as interactivity, information reliability, and usefulness, have statistically significant positive effects on e-loyalty. Third, the analysis supported the hypothesis that experiential value has a statistically significant positive effect on e-loyalty. Consequently, tourism companies should improve customers' experiential value by supplementing their existing platforms, considering the interactivity, information reliability, and usefulness of users based on these characteristics of social tourism information platforms. To increase e-loyalty to their social tourism information platforms, tourism companies should clearly and rapidly provide the information needed by users in addition to improving the visual design of such platforms. Moreover, to increase e-loyalty, the companies can incorporate their own killer content into platforms for users to have an enjoyable time, using platforms that stimulate their interest and give pleasure and fun, and this way, they can satisfy the users' needs for experiential value.

Effects of PCB Surface Finishes on in-situ Intermetallics Growth and Electromigration Characteristics of Sn-3.0Ag-0.5Cu Pb-free Solder Joints (PCB 표면처리에 따른 Sn-3.0Ag-0.5Cu 무연솔더 접합부의 in-situ 금속간 화합물 성장 및 Electromigration 특성 분석)

  • Kim, Sung-Hyuk;Park, Gyu-Tae;Lee, Byeong-Rok;Kim, Jae-Myeong;Yoo, Sehoon;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.22 no.2
    • /
    • pp.47-53
    • /
    • 2015
  • The effects of electroless nickel immersion gold (ENIG) and organic solderability preservative (OSP) surface finishes on the in-situ intermetallics reaction and the electromigration (EM) reliability of Sn-3.0Ag-0.5Cu (SAC305) solder bump were systematically investigated. After as-bonded, $(Cu,Ni)_6Sn_5$ intermetallic compound (IMC) was formed at the interface of the ENIG surface finish at solder top side, while at the OSP surface finish at solder bottom side,$ Cu_6Sn_5$ and $Cu_3Sn$ IMCs were formed. Mean time to failure on SAC305 solder bump at $130^{\circ}C$ with a current density of $5.0{\times}10^3A/cm^2$ was 78.7 hrs. EM open failure was observed at bottom OSP surface finish by fast consumption of Cu atoms when electrons flow from bottom Cu substrate to solder. In-situ scanning electron microscope analysis showed that IMC growth rate of ENIG surface finish was much lower than that of the OSP surface finish. Therefore, EM reliability of ENIG surface finish was higher than that of OSP surface finish due to its superior barrier stability to IMC reaction.

Electrical response of tungsten diselenide to the adsorption of trinitrotoluene molecules (폭발물 감지 시스템 개발을 위한 TNT 분자 흡착에 대한 WSe2 소자의 전기적 반응 특성 평가)

  • Chan Hwi Kim;Suyeon Cho;Hyeongtae Kim;Won Joo Lee;Jun Hong Park
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.33 no.6
    • /
    • pp.255-260
    • /
    • 2023
  • As demanding the detection of explosive molecules, it is required to develop rapidly and precisely responsive sensors with ultra-high sensitivity. Since two-dimensional semiconductors have an atomically thin body nature where mobile carriers accumulate, the abrupt modulation carrier in the thin body channel can be expected. To investigate the effectiveness of WSe2 semiconductor materials as a detection material for TNT (Trinitrotoluene) explosives, WSe2 was synthesized using thermal chemical vapor deposition, and afterward, WSe2 FETs (Field Effect Transistors) were fabricated using standard photo-lithograph processes. Raman Spectrum and FT-IR (Fourier-transform infrared) spectroscopy reveal that the adsorption of TNT molecules induces the structural transition of WSe2 crystalline. The electrical properties before and after adsorption of TNT molecules on the WSe2 surface were compared; as -50 V was applied as the back gate bias, 0.02 μA was recorded in the bare state, and the drain current increased to 0.41 μA with a dropping 0.6% (w/v) TNT while maintaining the p-type behavior. Afterward, the electrical characteristics were additionally evaluated by comparing the carrier mobility, hysteresis, and on/off ratio. Consequently, the present report provides the milestone for developing ultra-sensitive sensors with rapid response and high precision.

Thermal conductivity analysis of Al/graphite composite fabricated by a mechanical alloying (기계적 합금법에 의한 Al/graphite 복합체 제조 및 열전도도 특성 분석)

  • Lee, Jung-Il;Kim, Tae Wan;Yoon, Yo Han;Cho, Hyun Su;Ryu, Jeong Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.26 no.4
    • /
    • pp.155-158
    • /
    • 2016
  • Thermal conductivity is a very important factor for applicability and reliability in electrical devices. In this study, Al/graphite composite is fabricated by a mechanical alloying and heat-treatment and its physical properties are characterized. The XRD peak intensity of the $Al_4C_3$ ceramic phase observed in the heat-treated Al/graphite composite increased with heat-treatment temperature and time. The thermal conductivity of the heat-treated Al/graphite composite sample was very lower than that of the pure Al sample, and increased with heat-treatment temperature and time.

A Study on the Self-annealing Characteristics of Electroplated Copper Thin Film for DRAM Integrated Process (DRAM 집적공정 응용을 위한 전기도금법 증착 구리 박막의 자기 열처리 특성 연구)

  • Choi, Deuk-Sung;Jeong, Seung-Hyun
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.25 no.3
    • /
    • pp.61-66
    • /
    • 2018
  • This research scrutinizes the self-annealing characteristics of copper used to metal interconnection for application of DRAM fabrication process. As the time goes after the copper deposited, the grain of copper is growing. It is called self-annealing. We use the electroplating method for copper deposition and estimate two kinds of electroplating chemicals having different organic additives. As the time of self-annealing is elapsed, sheet resistance decreases with logarithmic dependence of time and is finally saturated. The improvement of sheet resistance is approximately 20%. The saturation time of experimental sample is shorter than that of reference sample. We can find that self-annealing is highly efficient in grain growth of copper through the measurement of TEM analysis. The structure of copper grain is similar to the bamboo type useful for current flow. The results of thermal excursion characteristics show that the reliability of self-annealed sample is better than that of sample annealed at higher temperature. The self-annealed sample is not contained in hillock. The self-annealed samples grow until $2{\mu}m$ and develop in [100] direction more favorable for reliability.