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http://dx.doi.org/10.6117/kmeps.2018.25.4.083

Effect of NCF Trap on Electromigration Characteristics of Cu/Ni/Sn-Ag Microbumps  

Ryu, Hyodong (School of Materials Science and Engineering, Andong National University)
Lee, Byeong-Rok (STATS ChipPAC Korea Ltd.)
Kim, Jun-beom (HANA Micron Inc.)
Park, Young-Bae (School of Materials Science and Engineering, Andong National University)
Publication Information
Journal of the Microelectronics and Packaging Society / v.25, no.4, 2018 , pp. 83-88 More about this Journal
Abstract
The electromigration (EM) tests were performed at $150^{\circ}C$ with $1.5{\times}10^5A/cm^2$ conditions in order to investigate the effect of non-conductive film (NCF) trap on the electrical reliability of Cu/Ni/Sn-Ag microbumps. The EM failure time of Cu/Ni/Sn-Ag microbump with NCF trap was around 8 times shorter than Cu/Ni/Sn-Ag microbump without NCF trap. From systematic analysis on the electrical resistance and failed interfaces, the trapped NCF-induced voids at the Sn-Ag/Ni-Sn intermetallic compound interface lead to faster EM void growth and earlier open failure.
Keywords
non-conductive film; underfill; Cu/Ni/Sn-Ag microbump; intermetallic compound; electromigration;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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