• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.314-318
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• 2002

The etching behaviors of the ferroelectric $YMnO_3$ thin films were studied by an inductively coupled plasma (ICP). The maximum etch rate of $YMnO_3$ thin film is 300 ${\AA}/min$ at Ar/$Cl_2$of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of $30^{\circ}C$. Addition of $CF_4$ gas decrease the etch rate of $YMnO_3$ thin film. From the results of XPS analysis, nonvolatile $YF_x$ compounds were found on the surface of $YMnO_3$ thin film which is etched in Ar/$Cl_2$/CF$_4$plasma. The etch profile of YMnO$_3$film is improved by addition of $CF_4$ gas into the Ar/$Cl_2$ plasma. These results suggest that YF$_{x}$ compound acts as a sidewall passivants which reduce the sticking coefficient of chlorine on $YMnO_3$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.145-145
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• 2010

반도체 소자의 크기가 수십 나노미터 영역으로 줄어들면서, 메모리 소자 또한 미세화를 위해 새로운 기술을 요구하고 있다. 1T DRAM은 하나의 트랜지스터와 하나의 캐패시터 구조를 가진 기존의 DRAM과 달리, 캐패시터 영역을 없애고 하나의 트랜지스터만으로 동작하기 때문에 복잡한 공정과정을 줄일 수 있으며 소자집적화에도 용이하다. 또한 SOI (Silicon-On-Insulator) 기판을 사용함으로써 단채널효과와 누설전류를 감소시키고, 소비전력이 적다는 이점을 가지고 있다. 1T DRAM은 floating body effect에 의해 상부실리콘의 중성영역에 축적된 정공을 이용하여 정보를 저장하게 된다. floating body effect를 발생시키기 위해 본 연구에서는 SOI 기판을 사용한 MOSFET을 사용하였는데, SOI 기판은 불순물 도핑농도에 따라 상부실리콘의 공핍층 두께가 결정된다. 실제로 불순물을 $10^{15}cm^{-3}$ 정도 도핑을 하게 되면 완전공핍된 SOI 구조가 된다. 이는 subthreshold swing값이 작고 저전압, 저전력용 회로에 적합한 특성을 보이기 때문에 부분공핍된 SOI 구조보다 우수한 특성을 가진다. 하지만, 상부실리콘의 중성영역이 완전히 공핍되어 정공이 축적될 공간이 존재하지 않게 된다. 이를 해결하기 위해 기판에 전압을 인가 후 kink effect를 확인하여, 메모리 소자로서의 구동 가능성을 알아보았다. 본 연구에서는 상부실리콘의 두께가 감소함에 따라 1T DRAM의 메모리 특성변화를 관찰하고자, TMAH (Tetramethy Ammonuim Hydroxide) 용액을 이용한 습식식각을 통해 상부실리콘의 두께가 각기 다른 소자를 제작하였다. 제작된 소자는 66 mv/dec의 우수한 subthreshold swing 값을 나타내며 빠른 스위칭 특성을 보였다. 또한 kink effect가 발생하는 최적의 조건을 찾고, 상부실리콘의 두께가 메모리 소자의 쓰기/소거 동작의 경향성에 미치는 영향을 평가하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.196.1-196.1
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• 2013

반도체의 device design rule이 shrink 됨에 따라 공정이 난이도가 높아지고 이에 따른 관리가 어려워지고 있다. 특히 미세 particle에 대한 제어의 필요성은 보다 커졌다. 진공 chamber 발생하는 미세 particle의 주요 원인으로는 공정 중 발생한 polymer, chamber 내 부품의 식각 및 스퍼터링에 의한 부산물 등이 있다. Plasma 공정 도중 발생한 particle은 plasma 내 전자에 의해 대전되어 음의 전하량을 가지게 된다. 음의 전하량을 가진 particle은 plasma와 wafer의 경계면에서 형성되는 sheath 때문에 wafer에 도달하지 못하고 plasma 내에 부유하게 된다. 이러한 particle은 plasma가 꺼지게 되면 sheath가 사라지면서 wafer에 도달하게 되고 wafer의 오염을 유발하게 되고 생산 수율을 저하시키는 요인이 된다. 이러한 이유로 최근 plasma 공정에서는 공정 중 발생하는 부유성 particle에 대한 관리가 중요해졌다. 이를 관리하기 위해 plasma를 끄기 전 부유성 particle을 제거하는 방안을 고안하고 평가를 진행하였다. 공정이 끝나고 plasma가 꺼지기 전 plasma를 유지하여 부유성 particle이 wafer에 도달하지 못하는 상태에서 gas purge를 실시한다. 이러한 과정 후 plasma를 끄게 되면 부유성 particle이 wafer에 도달하는 것을 감소시키게 된다. 이번 평가를 통해 부유성 particle에 대해서 대략 20%의 감소 효과를 볼 수 있었다. 이를 토대로 향후 조건 최적화 후 적용 시 particle 감소뿐 만 아니라 수율 향상에도 기여할 수 있을 것이라 기대된다.

• Applied Chemistry for Engineering
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• v.32 no.1
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• pp.49-54
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• 2021

Plasma-polymerized methyl methacrylate (MMA) thin films were synthesized by remote plasma, and effects of plasma power, reaction pressure and direct-indirect plasma on the growth rate and chemical bonding were investigated with alpha-step, FT-IR, XPS and Langmüir probe method. As the plasma power and pressure increased, the tendency of growth rate showed maximum value at a certain range. FT-IR and XPS analyses revealed that composition ratio of C/O and hydrocarbon (C-C) % in the deposited films increased with plasma power, but ester (COO) C % decreased with it. Direct plasma method was effective for fast growth rate, but indirect plasma method was favorable for maintaining the chemical structure of MMA.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.4
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• pp.77-82
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• 2022

During etching process of PCB, the electroplated copper line and seed layer copper have different etching rates and it caused the over etching of copper line as well as undercut of lines. In this research, the effects of etchants composition on copper etching characteristics were investigated. The optimum concentration of hydrogen peroxide and sulfuric acid of etchants were obtained using polarization and OCV (open circuit voltage) analysis for both rolled copper and electroplated copper. The inhibiting effects of different inhibitors were investigated using OCV and ZRA (zero resistance ammeter) analysis. The galvanic current between electroplated copper and seed layer copper were measured using ZRA method. Inhibitors for least galvanic current could be chosen based on galvanic coupling in ZRA analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.308-308
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• 2013

본 연구에 염료감응형 태양전지(Dye Sensitized Solar Cells; DSSCs)의 광전변환효율을 높이기 위해 작업전극에 새로운 구조의 광투과층 및 산란층을 도입하였다. DSSCs 작업전극의 빛을 투과시키는 투과층에 크기가 10 nm 이하의 nanoparticle $TiO_2$를 적용하고, 투과된 빛이 산란되어 많은 전자가 여기 될 수 있도록 기존의 큰 입자 사이즈였던 산란층을 이용하는 대신 $TiO_2$ nanorod 및 nanotube 형태의 구조를 도입하여 기존의 작업전극과 비교하였다. 산란층에서 방향성을 가지는 rutile 상의 $TiO_2$는 저온에서 안정적인 anatase 상의 $TiO_2$보다 화학적으로 안정하며, 높은 산란율을 가지고, 광에 의해 여기된 전자를 직접적으로 집전전극에 전달해 줌으로서 소자의 효율을 증가시킨다고 보고되고 있다. Rutile 상의 $TiO_2$ 층 제작 시 수열합성법을 이용하면 nanorod 모양의 $TiO_2$층을 형성할 수 있고, 이와 같은 방법으로 성장시킨 산란층에 전기영동법의 식각 효과를 사용하면 nanotube 모양의 $TiO_2$층을 성장시킬 수 있어 산란효과의 극대화 및 전극의 표면적을 넓히는 장점이 있다. 각각의 방법을 이용하여 만든 구조 위에 입자 크기 10 nm의 $TiO_2$를 Dr blade 방법으로 도포하여 double layer (산란층+흡수층)로 구성된 작업 전극을 이용한 DSSCs를 제작한 후 I-V curve와 EIS (Electrochemical Impedance Spectroscopy)를 측정하여 효율 및 전기화학적 특성을 분석하였다.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.61-66
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• 2005

In order to make submicron cell for spin-injection device, lift-off method using Pt stencil and wet etching was chosen. This approach allows batch fabrication of stencil substrate with electron-beam lithography. It simplifies the process between magnetic film stack deposition and final device testing, thus enabling rapid turnaround in sample fabrication. Submicron junctions with size of $200nm{\times}300nm$ and $500nm{\times}500nm$ 500 nm and pseudo spin valve structure of $CoFe(30{\AA})/Cu(100{\AA})/CoFe(120{\AA}$) was deposited into the nanojunctions. MR ratio was 0.8 and $1.1{\%}$, respectively and spin transfer effect was confirmed with critical current of $7.65{\times}10^7A/cm^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.6
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• pp.390-397
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• 2001

A novel self-aligned ESD (Elevated Source Drain) MOSFET structure which can effectively reduce the GIDL (Gate-Induced Drain Leakage) current is proposed and analyzed. The proposed ESD structure is characterized by sidewall spacer and recessed-channel depth which are determined by dry-etching process. Elevation of the Source/Drain extension region is realized so that the low-activation effect caused by low-energy ion implantation can be avoided. Unlike the conventional LDD structures, it is shown that the GIDL current of the ESD structure is suppressed without sacrificing the maximum driving capability. The main reason for the reduction of GIDL current Is the decreased electric field at the point of the maximum band-to-band tunneling as the peak electric field is shifted toward the drain side.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2010.11a
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• pp.245-253
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• 2010

The present study shows some results of developing evaporative heat exchangers with mini-channels. Heat exchangers with three different water paths were manufactured and tested to compare performances of cooling and pressure drop. Among the three types of heat exchangers, Type 2 with full-etching was proved to be the best in the cooling performances for considered operating conditions, and thus it is recommended to adopt Type 2 for its simplicity of production and outstanding performance. However, Type 1 was shown to be better when it is operated at a high air inlet temperature condition. The developed evaporative heat exchanger will be installed in Environmental Control Systems(ECSs) for aerial vehicles, and it can be used effectively in case an ECS is not only limited in its weight and volume but also required to absorb heats without supplying water (or a coolant) for a certain period of time.

• Clean Technology
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• v.10 no.1
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• pp.1-7
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• 2004

In this study, the performance of Aluminium foil etching waste(PWF100) as a cohesive agent was estimated and the methods to commercialize it were investigated through comparison of physical properties between Aluminium foil etching waste(PWF100) and commercial cohesive agent(PAC17). The height of sediment bed was measured according ot the change of the concentration of BKN-100, BKR-110, and BKR-120 prepared by using PWF100. When the concentrations of BKN-100, BKR-110, and BKR-120 were increased, the heights of sediment bed were constant after decreased. Also, the density of sediment bed was investigated according to the change of the concentration of BKN-100. When the concentrations of BKN-100 were increased, the densities of sediment bed were decreased. In addition, based on the concentration of BKN-100, BKR-110, and BKR-120, the sediment rate was experimented. When the concentrations of BKN-100, BKR-110, and BKR-120 were increased, sediment rates were rapid and then slow. Moreover, the volumes of sediment bed were measured according to the change of the concentration of BKN-100. According to increasing the concentrations of BKN-100, the required time for getting to the minimum volume of sedment bed were reduced and then increased. Lastly, the required time for sedimentation based on the concentration of BKN-100, BKR-110, and BKR-120 was investigated. When the concentrations of BKN-100, BKR-110, and BKR-120 were increased, the required times for sedimentation were increased after decreased. From these results, it can be concluded that the PWF100 acts as a cohesive agent.