• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.194-195
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• 2005

• Journal of the Korean Magnetics Society
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• v.16 no.6
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• pp.276-278
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• 2006

The switching characteristics of magnetic tunnel junctions (MTJs) comprising amorphous ferromagnetic CoFeSiB free layer have been investigated. CoFeSiB was used for the free layer to enhance the switching characteristics. The typical junction structure was $Si/SiO_{2}/Ta$ 45/Ru 9.5/IrMn 10/CoFe $7/AlO_{x}/CoFeSiB\;(t)/Ru\;60\;(in\;nm)$. CoFeSiB has low saturation magnetization ($M_{s}$) of $560\;emu/cm^{3}$ and high anisotropy constant ($K_{u}$) of $2800\;erg/cm^{3}$. These properties caused low coercivity ($H_{c}$) and high sensitivity in MTJs, and it also confirmed in submicrometer-sized elements by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. By increasing CoFeSiB free layer thickness, the switching characteristics became worse due to increase of the demagnetization field.

• Journal of the Korean Magnetics Society
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• v.17 no.3
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• pp.124-127
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• 2007

Magnetic tunnel junctions (MTJs), which consisted of amorphous CoFeSiB layers, were investigated. The CoFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with an emphasis given on understanding the effect of the amorphous free layer on the switching characteristics of the MTJs. CoFeSiB has a lower saturation magnetization ($M_s\;:\;560\;emu/cm^3$) and a higher anisotropy constant ($K_u\;:\;2800\;erg/cm^3$) than CoFe and NiFe, respectively. An exchange coupling energy ($J_{ex}$) of $-0.003\;erg/cm^2$ was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the Si/$SiO_2$/Ta 45/Ru 9.5/IrMn 10/CoFe 7/$AlO_x$/CoFeSiB 7 or CoFeSiB (t)/Ru 1.0/CoFeSiB (7-t)/Ru 60 (in nm) MTJs structure, it was found that the size dependence of the switching field originated in the lower $J_{ex}$ using the experimental and simulation results. The CoFeSiB synthetic antiferromagnet structures were proved to be beneficial for the switching characteristics such as reducing the coercivity ($H_c$) and increasing the sensitivity in micrometer size, even in submicrometer sized elements.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.283-285
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• 2003

본 연구에서는 기존 광 스위치의 기계적 거동 방법과 달리 유체 자체의 거동만으로 광 진행을 차단시킬 수 있는 광 스위치를 제작하였다. 본 연구에서 광의 진행을 차단시키기 위해 사용한 자성 유체란 자성 재료로써 자기 특성과 액체의 유동성을 갖고 있으며, 자기장에 즉각 반응하여 자기장 인가시 고체와 같은 형태를 갖게 된다. 한편, 기존 광 스위치에서 빛의 방향을 변화시키는 스위칭의 원리로 대부분 마이크로 미러의 구동 기술이 사용되고 있다. 그러나 이 방식은 기계적인 거동에 의한 마모와 Crack 등이 발생할 수 있는 단점이 있으며, 마모와 Crack의 단점을 극복하기 위해, 본 연구에서는 포화 자화도가 600G인 자성 유체의 유극 거동을 이용하여 기계적 거동에 의한 문제점을 개선하는데 목적을 두었다. 또한 실험적으로 영구 자석을 이용하려 광 스위칭작용과 광 스위치로의 적용가능성을 확인하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.12
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• pp.2343-2351
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• 2007

In this paper, we describe the design and implementation of time-varying magnetic field stimulator. Novel design for power supply part to generate high repetitive magnetic field for very short time(less than $300{\mu}s$) was achieved. Using the novel designed power supply part and the circular type coil probe, we've achieved high magnetic field up to 1.2 Tesla in 20Hz repetition rate.

• Proceedings of the KIPE Conference
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• 2016.07a
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• pp.193-194
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• 2016

일반적으로 자기장을 이용하는 무선전력 전송 방식은 노이즈, 금속 영향성, 발열, 위치에 따른 에너지 효율이 달라지는 문제점을 가지고 있다. 본 연구에서는 전기장을 이용하여 자동차 전, 후면에 있는 유리를 통해 전기자동차를 무선으로 충전하는 컨버터를 제안한다. 송, 수신부 회로는 유리를 유전체로 만들어진 작은 커패시터와 Quality-factor (Q-factor)를 보상하기 위해 두 개의 변압기를 이용한 임피던스 변환과 스위칭 손실을 최소화하기 위한 LLC직렬공진 동작을 사용하였다. 그 결과 제안하는 컨버터는 대용량 전력전송과 소프트 스위칭을 통한 높은 효율을 얻을 수 있었다. 제안하는 회로의 동작과 특성을 검증하기 위하여 유리를 이용한 커패시터를 구성하고 1.2KW 송, 수신 회로를 설계 및 제작하여 검증 하였다.

• Proceedings of the KIPE Conference
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• 2015.07a
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• pp.27-28
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• 2015

무선 전력 전송 방법은 자기장을 이용하는 인덕티브 커플링 방식과 자기 공진 방식, 그리고 전기장을 이용하는 커패시티브 커플링 방식으로 나눌 수 있다. 커패시티브 커플링 무선 전력 전송 방식은 인체에 대한 영향성이 없고, 전자기파 방해가 없다는 큰 장점을 갖고 있다. 본 연구에서는 커패시티브 커플링 무선 전력 전송에서 물리적으로 만들어진 커패시턴스를 크게 얻기 위하여 유리 유전체를 사용하고 동작 주파수를 매우 높게 하여 커패시턴스의 임피던스를 작게 보이도록 하게 하였다. 또한 좀 더 높은 입출력 전압비를 얻고, MOSFET의 스위칭 손실을 최소화 하기 위하여 커패시티브 커플링 무선 전력 전송에 적합한 MHz LLC 공진형 컨버터를 제안하였다. 제안한 컨버터는 모바일 기기 충전을 위한 4.2W 시스템을 구성하여 검증하였다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.9
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• pp.1087-1093
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• 2012

In this paper, we implemented a HF-band magnetic-field communication system consisting of an amplitude shift keying(ASK) transmitter, a pair of loop antennas, and an ASK receiver. Especially, we suggested a new ASK transmitter architecture, where a drain bias of class E amplifier is switched alternatively between two voltage levels with respect to input data. A maximum 5 W class E amplifier was designed using a low cost IRF510 power MOSFET at the frequency of 6.78 MHz. A measured sensitivity of the designed ASK receiver is -78 dBm, which consists of a log amplifier, a filter, and a comparator. Maximum communication range of magnetic-wave communication system with loop antennas was calculated using magnetic field equations in both near-field and far-field ranges. Also, in order to verify the calculated values, an indoor propagation loss was measured using a pair of loop antennas whose dimensions are $30{\times}30cm$. Maximum operating range is estimated about 35 m in case of transmitter's output power of 1 W and receiver sensitivity of -70 dBm, respectively. Finally, the communication field test using the designed ASK transmitter and receiver was successfully done at the distance of 5 m.

• Journal of the Korean Magnetics Society
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• v.16 no.3
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• pp.186-191
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• 2006

Ferromagnetic amorphous $Ni_{16}Fe_{62}Si_8B_{14}$ and $Co_{70.5}Fe_{4.5}Si_{15}B_{10}$ layers have been devised and incorporated as free layers of magnetic tunnel junctions (MTJs) to improve MRAM reading and writing performance. The NiFeSiB and CoFeSiB single-layer film exhibited a lower saturation magnetization ($Ms=800emu/cm^3,\;and\;560emu/cm^3$, respectively) compared to that of a $Co_{90}Fe_{10}(Ms=1400emu/cm^3)$. Because amorphous ferromagnetic materials have lower Ms than crystalline ones, the MTJs incorporating amorphous ferromagnetic materials offer lower switching field ($H_{sw}$) values than that of the traditional CoFe-based MTJ. The double-barrier MTJ with an amorphous NiFeSiB free layer offered smooth surface resulting in low bias voltage dependence, and high $V_h\;and\;V_{bd}$ compared with the values of the traditional CoFe-based MTJ.

• Journal of the Korean Magnetics Society
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• v.17 no.5
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• pp.188-193
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• 2007

We simulated the magnetization reversal behavior of submicron-thickness magnetic films by applying pulses of sub-ns-long durations and amplitudes along the easy axis. The films were rectangular and elliptical $Ni_{80}Fe_{20}$, and their thickness was 2 nm and 4 nm. We observed different behaviors depending upon the shape and thickness of the films and found a normal non-switching in regions in which we expected complete switching after relaxation. In the elliptical film, the non-switching regions were found to be random and to be widely distributed throughout the switching map. The strong demagnetization field along the z-axis, the film thickness direction, is likely responsible for this abnormal behavior. In the rectangular film, the abnormal non-switching regions were less distributed than they were in the elliptical film due to edge domains resulting from the small $M_z$ or demagnetization field during the switching. Our simulation confirms that large demagnetization is detrimental to the ultra-fast magnetization reversal of magnetic ultra-thin films.