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http://dx.doi.org/10.4283/JKMS.2006.16.6.276

Switching Characteristics of Magnetic Tunnel Junction with Amorphous CoFeSiB Free Layer  

Hwang, J.Y. (Department of Physics, Sookmyung Women's University)
Rhee, J.R. (Department of Physics, Sookmyung Women's University)
Publication Information
Journal of the Korean Magnetics Society / v.16, no.6, 2006 , pp. 276-278 More about this Journal
Abstract
The switching characteristics of magnetic tunnel junctions (MTJs) comprising amorphous ferromagnetic CoFeSiB free layer have been investigated. CoFeSiB was used for the free layer to enhance the switching characteristics. The typical junction structure was $Si/SiO_{2}/Ta$ 45/Ru 9.5/IrMn 10/CoFe $7/AlO_{x}/CoFeSiB\;(t)/Ru\;60\;(in\;nm)$. CoFeSiB has low saturation magnetization ($M_{s}$) of $560\;emu/cm^{3}$ and high anisotropy constant ($K_{u}$) of $2800\;erg/cm^{3}$. These properties caused low coercivity ($H_{c}$) and high sensitivity in MTJs, and it also confirmed in submicrometer-sized elements by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. By increasing CoFeSiB free layer thickness, the switching characteristics became worse due to increase of the demagnetization field.
Keywords
magnetic tunnel junction; tunneling magnetoresistance; switching field; amorphous; CoFeSiB;
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