• Journal of Digital Contents Society
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• v.16 no.3
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• pp.463-470
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• 2015

The angular dependence of active dosimeters, EPD, is analysed and compared with that of passive dosimeters, OSLD, after evaluating their relative response and uncertainty of measurement, where it is known that the personal use of them has been increased recently. There appeared a minor variation for average relative response of OSLD in the horizontal and vertical directions within the range $0^{\circ}{\sim}{\pm}90^{\circ}$, which are 0.97 and 0.95 respectively. The variations of angular dependence in the same situations with OSLD are 0.65 and 0.62, respectively, which also reveals a negligible effect on the overall uncertainty. EPDs within the interval $0^{\circ}{\sim}{\pm}60^{\circ}$ for horizontal and vertical directions are 0.94 and 0.97, respectively. These satisfy the requirements of IEC 61526. Uncertainties about the dependence of direction from horizontal and vertical directions are 0.44, 0.40, respectively. The impact of these uncertainties on the overall uncertainty was negligible. However, we observed a significant change in reactivity: the relative reactivities for $+90^{\circ}$ and $-90^{\circ}$ from the horizontal direction are 0.60, 0.37, while that form vertical direction is 0.06. The direction dependence of OSLD was superior to EPD in the range of $0^{\circ}{\sim}{\pm}90^{\circ}$. There appeared a rapidly changing structural features in EPD response for a certain direction. Therefore, we conclude that concurrent use of passive dosimeters and auxiliary dosimeter provides accurate data for personal dose measurements.

• Korean Journal of Crystallography
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• v.7 no.1
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• pp.64-72
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• 1996

Calculation of the amount of excess arsenic charge has been carried out for the single crystal growth of GaAs with 1-T HB(single temperature zone horizontal Bridgman) method which has no low temperature arsenic zone. Based upon the investigation of the thermochemical properties of the Ga and As system, a general equation for the excess dimension of the ampoule and temperature gradient of the furnace. From this result, a theoretical background of the 1-T HB method has been constructed for the single crystal growth of GaAs.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.47-47
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• 2018

단일벽 탄소나노튜브 (Single-walled carbon nanotubes, SWNTs)는 우수한 물리적 화학적 특성을 갖고 있어 나노전자소자, 투명전도막, 에너지소자, 센서 등 다양한 분야로의 응용이 기대되고 있다. 열화학기상증착(Thermal chemical vapor deposition, TCVD)법은 SWNTs의 합성 공정이 간단하고 공정변수의 제어가 용이하다는 장점이 있어 SWNT 합성 연구에 가장 널리 사용되어 왔다. 일반적으로 금속 촉매의 박막이 증착된 합성 기판은 온도가 가장 높고 비교적 균일성이 보장되는 TCVD 반응기의 중심부에 위치시키고 공정변수를 변화해가며 연구를 진행해 왔다. 본 실험실에서는 수평형 반응기 전역에 합성 기판을 설치하여 SWNTs를 합성한 결과, 반응기의 중심보다 뒤의 영역에서 SWNTs의 합성 수율이 상당히 증가하는 것을 초기실험을 통해 확인하였다. 본 연구에서는 SWNTs 합성 시 가스 유량과 합성 온도를 변화시켰을 때 기판 위치에 따른 SWNTs의 수율 및 물성변화를 구체적으로 조사하였다. 합성가스와 촉매로는 메탄가스와 철 박막을 사용하였으며, 합성 수율의 변화는 고분해능 주사전자현미경을 이용하여 관찰하였다. 그리고 합성된 SWNTs의 형태 및 결정성은 라만분광법과 원자간힘현미경을 이용하여 평가하였다. 결과적으로, 진행하였던 모든 합성 조건에서 반응기 중심보다 뒤의 영역에서 더 고수율의 SWNTs가 합성되었으며, 최적 합성 조건의 SWNTs 면밀도는 99% 이상이었다. 본 연구의 결과는 CVD 공정을 이용하는 다양한 저차원 나노 소재의 합성에도 적용될 수 있을 것으로 사료되며, 추후 이에 대한 연구가 필요하다.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1999.06a
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• pp.131-144
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• 1999

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1999.05a
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• pp.66-74
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• 1999

일반적으로 압출용 빌렛트제조에는 빌렛트상하의 품질변화로 수평연속주조법이 사용되지 않고 있지만 전자기교반법을 이용할 경우 이러한 단점이 없어진다. 따라서 전자기교반장치를 설치한 수평연속주조장치를 이용하여 연주빌렛트를 제조하였다. 최대자속밀도가 1000Gauss 인 전자기교반장치를 설계 제작하였으며, 간접냉각방식의 흑연몰드에서 알루미늄합금을 사용하여 건전한 연주빌렛트를 제조할 수 있는 여러 공정조건을 조사 검토하여 직경 70mm의 기포가 없고 표면이 미려한 등축정을 가진 연주빌렛트를 제조하였다. 인출속도에 따른 수평 연속주조 빌렛트의 표면, 용탕유동라인 및 조직을 검토한 결과 평균인출속도 20mm/min에서 40mm/min까지 아주 미려한 표면특성을 가졌으며, 인출속도가 빠르면 유동라인이 표면에서 중심 쪽으로 완만한 기울기를 가지게 되어 표면응고층이 얇아져 빌렛트가 고액계면에서 끊어지게 되며, 조직미세화는 인출속도가 클수록 미세화되었으나, 결정구상화정도는 인출속도가 빠를수록 악화되었다.

• Journal of the Korea Organic Resources Recycling Association
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• v.21 no.1
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• pp.39-44
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• 2013

This study evaluated the effect of fluid flow on the power density in a horizontal-flow microbial fuel cell (MFC). The maximum power densities in four types of flow induced by different channel types in the anode chamber were investigated. The fluid flow at each channel was analyzed using tracer tests. Results of polarization curves showed that the maximum power densities of case 1, 2, 3 and 4 were 95.7, 129.1, 190.9 and 114.2 mW/m2, respectively. Case 3 with a set of guide walls where flow had an S type-like shape showed the highest power density. Based on the Morrill Dispersion Index (MDI) value of case 4, microbial activity would be enhanced since the reactor allows even distribution of substrate but the overflow occurrence would not guarantee stable performance. Therefore, case 3 could be an effective reactor type for MFC because of high electricity generation and stable performance.

• Journal of Korean Ophthalmic Optics Society
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• v.19 no.3
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• pp.345-351
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• 2014

Purpose: The accommodative response and the near horizontal phoria were examined with additional spherical power to analyze the stimulus and response AC/A ratios that suggest reference data for the binocular vision. Methods: The open-field autorefractometer (Nvision-K 5001, Shin nippon) and modified thorington method (MIM card; Muscle Imbalance Measure card, Bernell) at 40 cm were utilized to measure the accommodative response and the near horizontal phoria for 81 persons ($20.89{\pm}1.92$ years old) with additional spherical power. The stimulus and the response AC/A ratios were calculated by gradient AC/A method. Results: The exophoria group showed the highest accommodative response ($1.92{\pm}0.26D$) at 40 cm, followed by orthophoria group and esophoria group($1.72{\pm}0.26D$ and $1.62{\pm}0.42D$, respectively) Meanwhile, the esophoria group showed the biggest ocular deviation for the near ($23.24{\Delta}$) followed by the orthophoria group and exophoria group ($19.76{\Delta}$ and $15.14{\Delta}$, respectively). The biggest difference of the stimulus and the response AC/A ratios was $1.72{\Delta}$ for the exophoria group with -2.00 D, while the one was $3.43{\Delta}$ for the esophoria group with +1.00 D. There was a significant difference between AC/A ratios for the exophoria group with -2.00 D, -1.00 D and the esophoria group with +3.00 D, +2.00D, +1.00D and -1.00D. Conclusions: The difference between stimulus and response AC/A was greater when increased minus spherical power for the exophoria group, while it was greater when increased plus spherical power for the esophoria group. Furthermore, the difference for the esophoria group was a greater than the one for the exophoria group.

• Korean Journal of Cognitive Science
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• v.23 no.2
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• pp.269-293
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• 2012

This study aimed to investigate the interactive effects of individual's cultural disposition (individualism, collectivism, horizontal disposition and vertical disposition) and cognitive style (analytic vs. holistic thinking) combination on differences in global precedence. For this purpose, the participants were divided into 4 different cultural disposition groups based on Singelis et al.'s(1995) INDCOL scale, and 2 cognitive style groups based on Choi et al.'s(2007) AHS, and required to respond selectively to global or local property of two types of compound stimuli (compound figure and compound letter). Reaction time and error rates for both global or local property were analyzed and compared as the dependent measurement. The results can be summarized as followings. First, faster responses were observed in compound figure condition than in compound letter condition, and to global property than to local property. Second, contrasting to individualism-cognitive style or horizontal disposition-cognitive style combinations, significant interaction effects both between collectivism and cognitive style, and between vertical disposition and cognitive style on global/local processing were found. This result indicated that combinations of collectivism-holistic thinking and vertical disposition-holistic thinking can induced larger global precedence effect than other combinations of cultural disposition and cognitive style.

• Electrical & Electronic Materials
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• v.4 no.4
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• pp.344-353
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• 1991

무정형 SiC 박막을 수평형 CVD반응기로부터 SiH$_{4}$ 및 H$_{2}$를 반응기체로 하여 실리콘 웨이퍼위에 증착시켜 제조하였다. 박막 성장 속도는 상압에서 650.deg.C와 850.deg.C범위에서 측정되었다. 반응기체의 유량은 1000sccm으로 고정하였으며 SiH$_{4}$와 CH$_{4}$의 유량을 변화시켰다. 증착 반응속도식으로 표면 반응이 율속단계인 Eley-Rideal 모델과 SiH$_{4}$와 CH$_{4}$의 종도에 m차로 비례하는 두가지 속도식을 가정하였다. 증착시간에 따른 SiC 박막두께의 측정으로부터 얻은 증착 반응 속도로부터 회귀 분석법에 의하여 두가지 반응속도식의 반응속도 상수를 구하였다. 얻어진 반응속도식에 의해서 계산된 값과 실험치를 비교한 결과 0.15차의 반응속도식이 Eley-Rideal반응기구보다 약산 더 잘 맞음을 알 수 있으나 두 모델 다 약간씩 실험결과와 차이가 나고 있다. 이것은 본 실험의 증착 조건의 율속단계가 확산 단계와 표면 반응 단계의 전이영역 즉 본 실험의 증착조건에서 확산속도와 표면 반응속도가 비슷하기 때문으로 생각된다. 또한 Eley-Rideal 반응기구에서 부터 얻어진 SiH$_{4}$ 및 CH$_{4}$의 흡착평형상수 $K_{s}$ 와 $K_{c}$ 값을 비교하면 1000K이하에서는 $K_{s}$ 가 $K_{c}$ 보다 큰 값을 가지는데 이것은 Gibbs 자유에너지 최소화 방법에서 구한 결과와 일치하였다.

• Geophysics and Geophysical Exploration
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• v.18 no.4
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• pp.232-240
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• 2015

Magnetotelluric (MT) survey investigates electrical structure of subsurface by measuring natural electromagnetic fields on the earth surface. For the accurate interpretation of MT data, the precise three-dimensional (3-D) modeling algorithm is prerequisite. Since MT responses are affected by electrical anisotropy of medium, the modeling algorithm has to incorporate the electrical anisotropy especially when analyzing time-lapse MT data sets, for monitoring engineered geothermal system (EGS) reservoir, because changes in different-vintage MT-data sets are small. This study developed a MT modeling algorithm for the simulation MT responses in the presence of electrical anisotropy by improving a pre-existing staggered-grid finite-difference MT modeling algorithm. After verifying the developed algorithm, we analyzed the effect of vertical transversely isotropic (VTI) anisotropy on MT responses. In addition, we are planning to extend the applicability of the developed algorithm which can simulate not only the horizontal transversely isotropic (HTI) anisotropy, but also the tiled transversely isotropic (TTI) anisotropy.