• Title/Summary/Keyword: 세정방법

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KSTAR ICRF 방전세정 플라즈마의 특성분석

  • Kim, Seon-Ho;Wang, Seon-Jeong;Gwak, Jong-Gu;Hong, Seok-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.295-295
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    • 2010
  • KSTAR(Korea Superconducting Tokamak Advanced Research) 토카막에 설치되어 있는 ICRF(Ion Cyclotron Range Frequency) 시스템을 이용한 방전세정을 2008년에 이어 2009 KSTAR 플라즈마 campaign 동안에도 시행하였다. ICRF 시스템을 이용한 방전세정인 ICWC(Ion Cyclotron Wall Cleaning)는 ITER와 DEMO 같은 초전도 자석을 이용하는 토카막에서 토카막 shot 중간에 자장을 낮추지 않고 바로 방전 세정을 할 수 있는 방법이다. 토카막에서 방전세정은 탄소나 산소 화합물과 같은 불순물을 제거하여 방사에 의한 플라즈마 냉각을 막고 토카막 초기 start-up시 진공 챔버 벽면으로부터 의도하지 않은 연료주입을 제거하는 역할을 한다. 본 연구에서는 ICWC 방전 세정 플라즈마의 밀도특성과 균일도를 간섭계와 $H_{\alpha}$ line 세기를 통해 관측하고 RGA를 통해서 C, $H_2O$, $O^2$ 불순물의 제거량을 파악하는 한편 토카막의 신뢰성 있는 start-up을 위해 요구되는 벽면에서 토카막 방전가스의 제거량을 HD양을 통해서 조사하였다. 플라즈마 선적분 밀도는 약 $1{\sim}3{\times}10^{17}#/m^2$로 측정되었는데 이는 보통 He을 이용한 방전세정 플라즈마의 밀도에 해당한다. 한편 $H_{\alpha}$ line의 세기를 통해 ICWC 방전 플라즈마의 균일도를 살펴본 결과 안테나 전류띠의 중간이 아닌 끝부분에서 $H_{\alpha}$의 세기가 큰 것으로 나타났는데 이는 ICWC 플라즈마가 Inductive 방전보다는 capacitive 방전에 의해 생성되는 것으로 추정된다. ICWC 방전에서 C, $H_2O$, $O_2$ 불순물의 제거율은 각각 약 $4.2{\times}10^{-5}\;mbar{\cdot}l/sec$, $1.4{\times}10^{-3}\;mbar{\cdot}l/sec$ 그리고 $1.72{\times}10^{-4}\;mbar{\cdot}l/sec$로 각각 나타났는데 ICWC shot이 진행될수록 이 양은 점점 줄어들었다. 대표적인 He/$H_2$, He ICWC 방전 shot인 2118, 2123 shot에서 벽면에서 $D_2$의 제거율은 각각 약 $0.12\;mbar{\cdot}l/sec$$3.9{\times}10^{-3}\;mbar{\cdot}l/sec$로 나타났다. 이는 수소의 첨가로 인해 HD의 형태로 $D_2$의 제거율이 증가되었기 때문이다. 한편 $H_2$의 첨가는 챔버 벽면에 흡착되는 $H_2$ 양을 또한 증가시키므로 차후에 $H_2$ 만을 제거하는 He ICWC를 수행해야 할 것이다.

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A COMPARISON OF THE IRRIGATION SYSTEMS IN CALCIUM HYDROXIDE REMOVAL (근관세정 방법에 따른 수산화칼슘 제재의 제거 효율 비교)

  • Eun, Jae-Seung;Park, Se-Hee;Cho, Kyung-Mo;Kim, Jin-Woo
    • Restorative Dentistry and Endodontics
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    • v.34 no.6
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    • pp.508-514
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    • 2009
  • The purposes of this study were to compare the efficacy of irrigation systems by removing a calcium hydroxide $(Ca(OH)_2)$ paste from the apical third of the root canal and the effect of the patency file. Sixty single rooted human teeth were used in this study. The canals were instrumented by a crown-down manner with .04 taper ProFile to ISO #35. $Ca(OH)_2$ and distilled water were mixed and placed inside the root canals. The teeth were divided into 6 groups according to the root canal irrigation system and the use of patency file as follows: group 1 - conventional method: group 2 - $EndoActivator^{(R)}$: group 3 - $EndoVac^{(R)}$; group 4 - conventional method, patency: group 4 - $EndoActivator^{(R)}$, patency; group 6 - $EndoVac^{(R)}$, patency. All teeth were irrigated with sodium hypochlorite. After the root canal irrigation, the teeth were split in bucco-lingual aspect. Percentage of the root canal surface coverage with residual $Ca(OH)_2$ until 3 mm from working length was analyzed using Image Pro Plus ver. 4.0. Statistical analysis was performed using the One-way ANOVA, t-test and Scheffe's post-hoc test. Conventional groups had significantly more $Ca(OH)_2$ debris than $EndoActivator^{(R)}$, $EndoVac^{(R)}$ groups. There was no significant difference between $EndoActivator^{(R)}$ and $EndoVac^{(R)}$ groups. Groups with patency file showed more effective in removing $Ca(OH)_2$ paste than no patency groups. but. it was no significant difference. This study showed that $EndoActivator^{(R)}$ and $EndoVac^{(R)}$ systems were more effective in removing $Ca(OH)_2$ paste from the apical third of the root canal than conventional method.

Cleanliness Test by Spray-Type Cleaning Agent for Electronic and Semiconductor Equipment (전자·반도체용 스프레이 분사형 세정제에 대한 청정도 평가)

  • Heo, Hyo Jung;Row, Kyung Ho
    • Korean Chemical Engineering Research
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    • v.47 no.6
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    • pp.688-694
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    • 2009
  • A spray-type cleaning agent in utilizing dust-remover on PCB was chosen to study the cleanliness test and efficiency. In order to choose alternative environmental-friendly cleaning agents, it is important that the systematic selection procedures should be introduced and applied through the evaluation of their cleaning ability, environmental characteristics, and economical factors, and that the objective and effective evaluation methods of cleanliness should be established for the industry. A novel cleaning evaluation method with scanning electron microscopy/energy-dispersive X-ray analysis of surface observation evaluation method and an infra-red thermography camera(THERMOVISION A20 model) was studied in this work. The sound card(CT-2770 model) cut by $2{\times}2cm$ size was used as a part, and before and after the spray cleaning, the cleanliness was observed by the image analyzer of SEM and further the removal efficiency of dust was quantitatively evaluated by the component analysis of EDX. For the parts of P4TE model motherboard and IPC-A-36 PCB plate, before and after the spray cleaning, temperature differences were measured and compared at room temperature and 50 oven temperature by an infra-red thermography camera in the contaminants of dust and iron powder.

Plasma pretreatment of the titanium nitride substrate fur metal organic chemical vapor deposition of copper (Cu-MOCVD를 위한 TiN기판의 플라즈마 전처리)

  • Lee, Chong-Mu;Lim, Jong-Min;Park, Woong
    • Korean Journal of Materials Research
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    • v.11 no.5
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    • pp.361-366
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    • 2001
  • It is difficult to obtain high Cu nucleation density and continuous Cu films in Cu-MOCVD without cleaning the TiN substrate prior to Cu deposition. In this study effects of plasma precleaning on the Cu nucleation density were investigated using SEM, XPS, AES, AFM analyses. Direct plasma pretreatment is much more effective than remote plasma pretreatment in enhancing Cu nucleation. Cleaning effects are enhanced with increasing the rf-power and the plasma exposure time in hydrogen plasma pretreatment. The mechanism through which Cu nucleation is enhanced by plasma pretreatment is as follows: Hydrogen ion\ulcorner in the hydrogen plasma react with TiN to form Ti and $NH_3$ Cu nucleation is easier on the Ti substrate than TiN substrate.

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Analysis of Hydrophobic Membrane Fouling on the COD Loading Rates at the State of Passive Adsorption in Membrane Bioreactor (생물학적 막분리 공정에서 수동흡착 상태에서의 유기물 유입 부하에 따른 소수성 막의 오염도 분석)

  • Park, Tae-Young;Choi, Changkyoo
    • Journal of Korean Society of Environmental Engineers
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    • v.37 no.3
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    • pp.152-158
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    • 2015
  • This paper investigated the membrane fouling potential at the state of passive adsorption which is no permeation with the test modules on COD (Chemical oxygen demand) loading rates, examined the recovery rate and resistance on membrane fouling by three cleaning manners of hydrophobic membrane in a bioreactor. The results showed that high COD loading led to the increase of extra-cellular polymeric substances and filtration resistance. The permeability resistance from 1st day to 63rd day was getting increased, however, the value of permeability resistance after 63th day during the operation period was almost same level at three COD loading rates, it was due that the biomass adhesion on membrane surface at the state of passive adsorption reached to the critical state. Also, the final recovery rates after three cleaning manners were 78%, 72% and 69% at the COD loading concentrations of 250 mg/L, 500 mg/L and 750 mg/L respectively, and then recovery rate by physical cleaning at Run 2 and Run 3 was decreased after 40th day, it proved that biomass cake, which is not easily removed, was formed on the membrane surface because of high COD loading rate and EPS concentration.

Cleansing effect of the alkaline ionized water on microorganisms of the denture surface (알칼리 이온수의 의치 미생물에 대한 세정효과에 관한 연구)

  • Kim, Young-Mi;Choi, Yu-Sung;Cho, In-Ho
    • The Journal of Korean Academy of Prosthodontics
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    • v.49 no.2
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    • pp.138-144
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    • 2011
  • Purpose: The purpose of this study was to evaluate the cleansing effect of recently developed alkaline ionized water, e-WASH, on microorganisms of the denture surface. Materials and methods: Removable partial and complete dentures were randomly assigned to the experimental group of 41 dentures, and the control group of 26. The denture was immersed in the e-WASH solution (experimental group), or tap water (control group) for 5 minutes. The plaque was collected from the denture surface before and after immersion, and smeared on the slide glass. Amount and motility of microorganisms were compared according to the morphology and strain of microorganisms, using the phase contrast microscope. Statistical analysis was accomplished with paired t-test and independent t-test at 95% confidence level (P<.05). Results: 1. The amount of cocci, bacilli, filamentous, spiral/comma, and the motility of bacilli, filamentous, and spiral/comma were decreased after denture cleansing with the alkaline ionized water, e-WASH (P<.05). But in the control group, only the amount of cocci showed a significant difference (P<.05), but no difference from the others. There were no differences in other analysis. 2. In the experimental group, the amount of cocci, bacilli, filamentous, spiral/comma, and the motility of bacilli, filamentous, and spiral/comma were smaller and more inactive compared to the control group (P<.05). Conclusion: These results indicated that the alkaline ionized water, e-WASH could effectively reduce the amount and motility of the experimented microorganisms on the denture surface, and that e-WASH could be recommended as an effective denture cleanser.

A Study on the Removal of Cu and Fe Impurities on Si Substrate (Si 기판에서 구리와 철 금속불순물의 제거에 대한 연구)

  • Choi, Baik-Il;Jeon, Hyeong-Tag
    • Korean Journal of Materials Research
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    • v.8 no.9
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    • pp.837-842
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    • 1998
  • As the size of the integrated circuit is scaled down the importance of Si cleaning has been emphasized. One of the major concerns is abut the removal of metallic impurities such as Cu and Fe on Si surface. In this study, we intentionally contaminated Cu and Fe on the Si wafers and cleaned the wafer by cleaning splits of the chemical mixture of $\textrm{H}_2\textrm{O}_2$ and HF and the combination of HF treatment with UV/$\textrm{O}_3$ treatment. The contamination level was monitored by TXRF. Surface microroughness of the Si wafers was measured by AFM. The Si wafer surface was examined by SEM. AES analysis was carried out to analyze the chemical composition of Cu impurities. The amount of Cu impurities after intentional contamination was abut the level of $\textrm{10}^{14}$ atoms/$\textrm{cm}^2$. The amount of Cu was decreased down to the level of $\textrm{10}^{10}$ atoms/$\textrm{cm}^2$ by cleaning splits. The repeated treatment exhibited better Cu removal efficiency. The surface roughness caused by contamination and removal of Cu was improved by repeated treatment of the cleaning splits. Cu were adsorbed on Si surface not in a thin film type but in a particle type and its diameter was abut 100-400${\AA}$ and its height was 30-100${\AA}$. Cu was contaminated on Si surface by chemical adsorption. In the case of Fe the contamination level was $\textrm{10}^{13}$ atoms/$\textrm{cm}^2$ and showed similar results of above Cu cleaning. Fe was contaminated on Si surface by physical adsorption and as a particle type.

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Characteristics of ITO with surface treatment by N2, O2, Ar Plasma and UV (질소, 산소, 아르곤 플라즈마와 자외선에 의하여 표면 처리한 ITO의 특성)

  • Bae, Gyeong-Tae;Jeong, Seon-Yeong;Gang, Seong-Ho;Kim, Hyeon-Gi;Kim, Byeong-Jin;Ju, Seong-Hu
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2018.06a
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    • pp.90-90
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    • 2018
  • 디스플레이는 다수의 가로 전극과 세로 전극으로 구성되고, 전극에 신호를 주어 동작하도록 하는 원리이다. 이 디스플레이에는 전기가 통하고 투명한 전극이 필수적으로 사용되고 있고, 대표적인 투명 전극으로 ITO (Indium Tin Oxide)가 있다. ITO 박막은 $In_2O_3$에 Sn을 첨가하여 $Sn^{4+}$ 이온이 $In^{3+}$ 이온을 치환하고 이 과정에서 잉여 전자가 전기전도에 기여하는 구조이다. ITO 박막은 표면 처리 방법에 따라 표면 상태가 크게 변화한다. 플라즈마를 이용한 표면 처리는 환경오염이 적으며 강도, 탄성률 등과 같은 재료의 기계적 특성을 변화시키지 않으면서 표면 특성만을 변화시킬 수 있는 방법으로 알려져 있다[1]. UV (Ultraviolet)를 조사한 표면처리는 ITO 표면의 탄소를 제거하고, 표면 쌍극자를 형성하며, 표면의 조성을 변화시킬 수 있으며, 페르미 에너지 준위를 이동시킬 수 있어 ITO의 일함수를 증가시킬 수 있다[2]. ITO에 대한 다양한 연구가 수행되었음에도 불구하고 보다 다양한 관점에서의 연구가 지속될 필요가 있다. 따라서 본 연구에서는 다양한 조건으로 표면 처리한 ITO 표면의 일함수, 면저항, 표면 형상, 평탄도, 접촉각 등에 대해 알아보고자 한다. 세정한 ITO, 세정 후 UV 처리한 ITO (UV 처리 시간 2분, 4분 6분, 8분), 세정 후 $N_2$, $O_2$, Ar의 공정 가스를 사용하여 Plasma 처리한 ITO로 표면 처리 조건을 변화하였다. 표면 처리한 ITO의 특성은 Kelvin Probe를 이용한 일함수, 물방울 형상의 각도를 측정한 접촉각, AFM (Atomic Force Microscope)을 이용한 평탄도, 가시광선 (380~780 nm) 파장에 대한 투과도와 면저항을 측정하였다. 접촉각은 세정한 ITO의 경우 $45.5^{\circ}$에서 세정 후 UV를 조사한 ITO의 경우 UV 8분 조사 시 $27.86^{\circ}$로 감소하였고, $N_2$, $O_2$, Ar 가스를 사용하여 Plasma 처리한 ITO는 모두 $10^{\circ}$ 미만을 나타내었다. 플라즈마 처리에 의하여 접촉각이 현저하게 개선되었다. ITO의 면저항은 표면 처리 조건에 따라 $9.620{\sim}9.903{\Omega}/{\square}$로 그 차이가 매우 적어 표면처리에 의하여 면저항의 변화는 없는 것으로 판단된다. 가시광선 영역에서의 투과도는 공정 조건에 따라 87.59 ~ 89.39%로 그 차이가 적어 표면처리에 의한 변화를 나타내지는 않은 것으로 판단된다. 표면 처리 조건에 따른 평탄도 $R_{rms}$는 세정한 ITO의 경우 4.501 nm로부터 UV 2, 4, 6, 8분 처리한 경우 2.797, 2.659, 2.538, 2.584 nm로 평탄도가 개선되었다. $N_2$, $O_2$, Ar 가스를 사용하여 플라즈마 처리한 ITO의 경우 평탄도 $R_{rms}$는 2.49, 4.715, 4.176 nm로 사용한 가스의 종류에 따라 다른 경향을 나타내었다. 표면 처리 조건에 따른 평탄도 Ra는 세정한 ITO의 경우 3.521 nm로부터 UV 2, 4, 6, 8분 처리한 경우 1.858, 1.967, 1.896, 1.942 nm를, $N_2$, $O_2$, Ar 가스를 사용하여 플라즈마 처리한 ITO의 경우는 1.744, 3.206, 3.251 nm로 평탄도 $R_{rms}$와 유사한 경향을 나타내었다.

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Long-Term Experiments of Cooling/Cleaning on Surface of 200-kW PV Power Array (200kW 급 태양광발전 어레이 표면의 냉각/세정에 대한 장기 실증 실험)

  • Han, Jun Sun;Jeong, Seong Dae;Yu, Sang Phil;Lee, Seong Su
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.37 no.11
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    • pp.971-975
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    • 2013
  • In general, the solar photovoltaic power increases with higher solar insolation. However, the solar cell generation efficiency reduces because the solar cell surface is heated by solar insolation. According to advanced research, with a $1^{\circ}C$ increase in the solar cell surface temperature, the generation efficiency decreases by ~0.5%. To solve this problem, we conducted experiments in which we attempted to reduce the solar cell surface temperature using a water jet spray. In this study, we found the long-term experimental results of increases in solar power generation. The experimental results show a comparison of the site with and without cooling and cleaning equipment being installed. The results of the long-term experiments show that solar photovoltaic power generation is increased by at least 13% up to 19% with cooling and cleaning.

마우스 초기 발생에 미치는 미네랄 오일의 효과

  • 이승태;김태민;조미영;김은정;임정묵
    • Proceedings of the KSAR Conference
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    • 2002.06a
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    • pp.54-54
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    • 2002
  • 본 연구에서는 마우스 초기 발생 시스템의 확립과 안정화를 위해 소적배양에 이용되는 미네랄 오일의 종류 및 세정방법이 마우스 초기 발생에 미치는 효과를 검토하였다. 본 연구를 위 해 5주-6주령의 ICR계 마우스를 사용했으며, 과배란 유도를 위하여 5IU PMSG 및 5IU hCG 를 각각 복강에 투여하였다. 과배란을 유도한 암컷 마우스는 수컷과 교배를 시켰으며, 교배 18시간 후 난관으로부터 1-세포기 수정란을 회수하였다. 회수된 수정란은 미네랄 오일이 도포된 CZB 배양액의 소적에서 37 ℃, 5% CO₂ in air 기상하에 138 시간 동안 배양되었다. (중략)

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