• JOURNAL OF ELECTRICAL WORLD
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• no.7 s.127
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• pp.78-83
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• 1987

최근의 피뢰기의 주류는 산화아연형이다. 그것은 우수한 전압-전류 비직선특성과 고신뢰성에 기인된다. 그러나 반면에 사용실적이 적다는 것, 산화아연소자의 열화기구가 충분히 해명되어 있지 않다는 등으로 정도가 높은 피뢰기의 외부진단기술에 대한 관심이 높아져가고 있다. 여기서는 최근의 동향과 적용사례를 소개한다.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.10 no.4
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• pp.273-280
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• 2012

The electrochemical behaviors of 10 g-scale fresh and oxidized Zircaloy-4 cladding hulls were examined in $500^{\circ}C$ LiCl-KCl molten salts to confirm the feasibility of the electrorefining process for the treatment of hull wastes. In the results of measuring the potential-current response using a stainless steel basket filled with oxidized Zircaloy-4 hull specimens, the oxidation peak of Zr appears to be at -0.7 to -0.8 V vs. Ag/AgCl, which is similar to that of fresh Zircaloy-4 hulls, while the oxidation current is found to be much smaller than that of fresh Zircaloy-4 hulls. These results are congruent with the outcome of current-time curves at -0.78 V and of measuring the change in the average weight and thickness after the electrochemical dissolution process. Although the oxide layer on the surface affects the uniformity and rate of dissolution by decreasing the conductivity of Zircaloy-4 hulls, electrochemical dissolution is considered to occur owing to the defect of the surface and phase properties of the Zr oxide layer.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1833-1835
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• 1999

게이트 산화막의 breakdown 전압을 나추기 위해 질소 주입을 하는 과정은 실리콘층에 패드 산화막을 성장시킨 후 실리콘과 패드 산화막 층사이에 질소 이온을 주입하였다. 이온 주입 후 패드 산화막 층을 제거하고 그 위에 게이트 산화막 층을 성장시키는 방법을 사용하였다. 이러한 방법을 질소 이온의 농도를 변화시키면서 여러번 반복하였다 그래서 질소 이온 농도의 변화에 따른 게이트 산화막 두께의 변화를 측정하였다. 그 결과 질소 농도이 따른 게이트 산화막 성장비율을 알아 보았다. 그리고 질소 농도의 변화에 따른 Breakdown 전압과 누설 전류의 변화를 측정하였다. 또한 앞에서 말한 질소 주입 공정이 들어가면서 추가적으로 발생하는 과정에 대해 고찰하였다.

• Resources Recycling
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• v.13 no.1
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• pp.28-38
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• 2004

The characteristics of cyanide decomposition in aqueous phase by electric oxidization have been explored in an effort to develop a process to recycle waste water. Considering current efficiency and voltage, the free cyanide decomposition experiment by electric oxidization indicated that 5 V of voltage and copper catalytic Cu/CN mole ratio 0.05 was the most appropriate condition, where current efficiency was 26%, and decomposition speed was 5.6 mM/min. High voltage and excess copper addition increased decomposition speed a little bit but not current efficiency. The experiment of free cyanide density change proves that high density cyanide is preferred because speed and current efficiency increase with density. Also, the overall decomposition reaction could be represented by the first order with respcect to cyanide with the rate constant of $1.6∼7.3${\times}$10^{-3}$ $min^{-1}$ The mass transfer coefficient of electric oxidization of cyanide came out as $2.42${\times}$10^{-5}$ $min^{-1}$ Furthermore, the Damkohler number was calculated as 5.7 in case of 7 V and it was found that the mass transfer stage was the rate determining step.

• Applied Chemistry for Engineering
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• v.26 no.3
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• pp.306-310
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• 2015

In this research, hematite nanoparticles were synthesized by DC thermal plasma process to increase the overall surface area. The effect of binders on hematite electrodes was investigated by changing the type and composition of binders when preparing electrodes. Nitrogen gas was also added to the DC thermal plasma process in order to dope the hematite with N for enhancing photoelectrochemical properties of hematite nanoparticles. The efficiency of water splitting reaction was measured by linear sweep voltammetry (LSV) under solar simulator. In LSV measurements, the onset potential and maximum current density at a fixed voltage were measured. The durability of electrodes was checked by repeating LSV measurements. CMC (carboxymethyl cellulose) binder with 50 : 1 composition exhibits the highest current density of $12mA/cm^2$ and CMC binder with 20 : 1 composition, showing the initial current density of $3mA/cm^2$, endures 20 times of repetitive LSV measurements. Effects of nitrogen doping on hematite nanoparticles were proven to be insignificant.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.273-279
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• 2006

This study explored the possibility of porous Si (PS) formed by indirect electrode anodization used for effective isolation material for radio frequency integrated circuits (RFIC). We investigated the effect of current density and reaction time on the porosity size and depth, and X-ray diffraction of bulk Si and porous Si to evaluate the change in lattice parameter. Porosity size and depth usually increases with an increase in the current density and reaction time. PS increases the lattice parameter of Si compared to the bulk Si which causes the compressive stress of around 8 MPa. PS formed by the method is believed to be suitable for isolation material for RFIC because it is simple process as well as good compatibility to Si VLSI process.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.10
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• pp.1815-1821
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• 2006

In this paper, the subthreshold swing has been analyzed for FinFET under channel length of 20nm. The analytical current model has been developed , including thermionic current and tunneling current models. The potential distribution by Poisson equation and carrier distribution by Maxwell-Boltzman statistics are used to calculate thermionic emission current and WKB(Wentzel-Kramers-Brillouin) approximation to tunneling current. The cutoff current is obtained by simple adding two currents since two current is independent. The subthreshold swings by this model are compared with those by two dimensional simulation and two values agree well. Since the tunneling current increases especially under channel length of 10nm, the characteristics of subthreshold swing is degraded. The channel and gate oxide thickness have to be fabricated as am as possible to decrease this short channel effects, and this process has to be developed. The subthreshold swings as a function of channel doping concentrations are obtained. Note that subthreshold swings are resultly constant at low doping concentration.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.803-810
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• 1997

Ba0.5Sr0.5TiO3 thin films were deposited by RF magnetron sputliring method in order to clarify the anneal condition and doping effect on loakage current Nb and Al were selected as electron donor and acceptor dopants respectively, in the BST films because they have been known to have nearly same ionic radii as Ti and thought to substitute Ti sites to influence the charge carrier and the acceptor state adjacent to the gram boundary. BST thin films prepared in-situ at elevated temperature showed selatively high leakage current density and low breakdown voltage. In order to achieve smooth surface and to improve electrical properties, BST thin films were deposited at room temperature and annealed at elevated temperature. Post-annealed BST thin films showed smoother surface morphology and lower leakage current density than in-situ prepared thin films. The leakage current density of Al doped thin films was measured to be around 10-8A/cm2, which is much lower than those of undoped and Nb doped BST films. The result clearly demonstrates that higher Schottky barrier and lower mobile charge carrier concentration achieved by annealing in the oxygen atmosphere and by Al doping are desirable for reducing leakage current density in BST thin films.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.15 no.3
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• pp.67-73
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• 2001

This paper resents a developed measuring device of resistive leakage current and a fundamental discussion of deterioration diagnosis for Zinc Oxide(ZnO) arrester blocks. We have developed the leakage current detection device for ageing test and durability evaluation for ZnO arrester blocks. The resistive leakage current can be used as an indicator to discriminate whether the ZnO arrester blocks is in good state or in bad. The resistive leakage current measuring system with the compensation circuit was designed and fabricated. The sauce tests for ZnO arrester blocks were investigated by observing the resistive leakage current together with fast Fourier transform analysis. The proposed monitoring systems for the resistive leakage current can effectively be used to investigate the electrophysical properties of ZnO arrester blocks in laboratory and to develop the techniques of forecasting the deterioration of ZnO arresters in electric power systems.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.865-868
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• 2006

In this paper, the subthreshold swing has been analyzed for double gate FinFET under channel length of 20nm. The analytical current model has been developed, including thermionic current and tunneling current models. The potential distribution by Poisson equation and carrier distribution by Maxwell-Boltzman statistics are used to calculate thermionic emission current, and WKB(Wentzel-Framers-Brillouin) approximation to tunneling current. The cutoff current is obtained by simple adding two currents since two current is independent. The subthreshold swings by this model are compared with those by two dimensional simulation and two values are good agreement. Since the tunneling current increases especially under channel length of 10nm, the characteristics of subthreshold swing is degraded. The channel and gate oxide thickness have to be fabricated as thin as possible to decrease this short channel effects and this process has to be developed. The subthreshold swings as a function of channel doping concentrations are obtained.