• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.29-33
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• 1999

Transition metallic $Cr^{3+}$ ion was diffused in white sapphire {0001}, ${10\bar{1}0}$ crystal plane which were grown by the Verneuil, it enhanced and changed the physical, electrical and optical properties of sapphires. After mixing the metallic oxide and metal powder, it were used for diffusion powder. When it was used the mixing powder of metal and metallic oxide, the dopping was slowly progressed and it needed the longer duration time and higher temperature, relatively. Metallic powder was vapoured under $1{\times}10^{-4}$ torr of vacuum pressure at $2050^{\circ}C$, first step, it were kept by the diffusion condition of 6 atm of $N_{2}$ accelerating pressure at $2050~2150^{\circ}C$. Each surface density of sapphire crystal are 0.2254(c) and $0.1199\;atom/{\AA}^2(a)$. The color of the Cr-doped sapphires was changed to red. Dopping reaction was come out more deep in the plane of ${10\bar{1}0}$ than {0001}. It was speculated that the planar density was one of the factors to determine diffusion effect.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.1
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• pp.14-20
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• 2018

Lead zinc niobate (PZN) added lead zirconate titanate (PZT) thick films with thickness of $5{\sim}10{\mu}m$ were fabricated on silicon and sapphire substrates using aerosol deposition method. The contents of PZN were varied from 0 %, 20 % and 40 %. The initial particles (PZT, 2PZN-8PZT, 4PZN-6PZT) had irregular shape and submicron sizes. The as-deposited film had fairly dense microstructure without any crack, and showed only a perovskite single phase formed with nano-sized grains. The as-deposited films on silicon were annealed at the temperatures of $700^{\circ}C$, and the films deposited on sapphire were annealed at $900^{\circ}C$ in the electrical furnace. The effects of PZN addition on the microstructural evolution were observed using by FE-SEM and HR-TEM.

• Tribology and Lubricants
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• v.32 no.2
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• pp.44-49
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• 2016

Diamond mechanical polishing (DMP) is a crucial process in a sapphire wafering process to improve flatness and achieve the target thickness by using free abrasives. In a DMP process, material removal rate (MRR) is a key factor to reduce process time and cost. Controlling mechanical parameters, such as velocity and pressure, can increase the MRR in a DMP process. However, there are limitations of using high velocities and pressures for achieving a high MRR owing to their side effects. In this paper, we present the lapping characteristics and improvement of MRR by using a fixed abrasive plate through an experimental study. The change in MRR as a function of velocity and pressure follows Preston's equation. The surface roughness of a wafer decreases as the plate velocity and pressure increases. We observe a sharp decrease in MRR over the lapping time at a high velocity and pressure in the velocity and pressure test. An analysis of surface roughness (Rq and Rpk) indicates that wear of abrasives decreases the MRR sharply. In order to investigate the effect of abrasive wear on the MRR, we utilize a cutting fluid and a rough wafer. The cutting fluid delays the wear of abrasives resulting in improvement of MRR drop. The rough wafer maintains the MRR at a stable rate by self-dressing.

• Tribology and Lubricants
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• v.32 no.2
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• pp.56-60
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• 2016

Sapphire has a high hardness and strength and chemical stability as a superior material. It is used mainly as a material for a semiconductor as well as LED. Recently, the cover glass industry used by a sapphire is getting a lot of attention. The sapphire substrate is manufactured through ingot sawing, lapping, diamond mechanical polishing (DMP) and chemical mechanical polishing (CMP) process. DMP is an important process to ensure the surface quality of several nm for CMP process as well as to determine the final form accuracy of the substrate. In DMP process, the material removal is achieved by using the mechanical energy of the relative motion to each other in the state that the diamond slurry is disposed between the sapphire substrate and the polishing platen. The polishing platen is one of the most important factors that determine the material removal characteristics in DMP. Especially, it is known that the geometric characteristics of the polishing platen affects the material removal amount and its distribution. This paper investigated the material removal characteristics and the effects of the polishing platen groove in sapphire DMP. The experiments were preliminarily carried out to evaluate the sapphire material removal characteristics according to process parameters such as pressure, relative velocity and so on. In the experiment, the monitoring apparatus was applied to analyze process phenomena in accordance with the processing conditions. From the experimental results, the correlation was analyzed among process parameters, polishing phenomena and the material removal characteristics. The material removal equation based on phenomenological factors could be derived. And the experiment was followed to investigate the effects of platen groove on material removal characteristics.

• Tribology and Lubricants
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• v.32 no.2
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• pp.67-71
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• 2016

This study investigates the characteristics of the sapphire wafer chemical mechanical polishing (CMP) process. The material removal rate is one of the most important factors since it has a significant impact on the production efficiency of a sapphire wafer. Some of the factors affecting the material removal rate include the pressure, platen speed and slurry. Among the factors affecting the CMP process, we analyzed the trends in the material removal rate and surface roughness, which are mechanical factors corresponding to both the pressure and platen speed, were analyzed. We also analyzed the increase in the material removal rate, which is proportional to the pressure and platen speed, using the Preston equation. In the experiment, after polishing a 4-inch sapphire wafer with increasing pressure and platen speed, we confirmed the material removal rate via thickness measurements. Further, surface roughness measurements of the sapphire wafer were performed using atomic force microscopy (AFM) equipment. Using the measurement results, we analyzed the trends in the surface roughness with the increase in material removal rate. In addition, the experimental results, confirmed that the material removal rate increases in proportion to the pressure and platen speed. However, the results showed no association between the material removal rate and surface roughness. The surface roughness after the CMP process showed a largely consistent trend. This study demonstrates the possibility to improve the production efficiency of sapphire wafer while maintaining stable quality via mechanical factors associated with the CMP process.

• Tribology and Lubricants
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• v.33 no.3
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• pp.106-111
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• 2017

Sapphire is an anisotropic material with excellent physical and chemical properties and is used as a substrate material in various fields such as LED (light emitting diode), power semiconductor, superconductor, sensor, and optical devices. Sapphire is processed into the final substrate through multi-wire saw, double-side lapping, heat treatment, diamond mechanical polishing, and chemical mechanical polishing. Among these, chemical mechanical polishing is the key process that determines the final surface quality of the substrate. Recent studies have reported that the material removal characteristics during chemical mechanical polishing changes according to the crystal orientations, however, detailed analysis of this phenomenon has not reported. In this work, we carried out chemical mechanical polishing of C(0001), R($1{\bar{1}}02$), and A($11{\bar{2}}0$) substrates with different sapphire crystal planes, and analyzed the effect of crystal orientation on the material removal characteristics and their correlations. We measured the material removal rate and frictional force to determine the material removal phenomenon, and performed nano-indentation to evaluate the material characteristics before and after the reaction. Our findings show that the material removal rate and frictional force depend on the crystal orientation, and the chemical reaction between the sapphire substrate and the slurry accelerates the material removal rate during chemical mechanical polishing.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.4
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• pp.75-80
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• 2013

Single crystal sapphire being used in high technology industry is a brittle material with a high hardness and excellent physical properties. ELID(Electrolytic In-Process Dressing) grinding technology was applied to material removal machining process of single crystal sapphire wafer. Ultrasonic vibration which added to material using ultrasonic table was adopted to efficient ELID grinding of sapphire materials. The evaluation of the ground surface of single crystal sapphire wafer was carried out by means of surface measuring by using AFM(Atomic Force Microscope), surface roughness tester and optical microscope device. As the results of experiment, it was shown that more efficient grinding was conducted when using ultrasonic table. In case of using #170 grinding wheel, surface roughness of ELID ground specimen in using ultrasonic table was superior to ELID ground specimen without ultrasonic table. However, In case of using #2000 grinding wheel, surface roughness of ELID ground specimen in using ultrasonic table was inferior to ELID ground specimen without ultrasonic table.

• Tribology and Lubricants
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• v.35 no.6
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• pp.323-329
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• 2019

Sapphire is currently used as a substrate material for blue light-emitting diodes (LEDs). The market for sapphire substrates has expanded rapidly as the use of LEDs has extended into various industries. However, sapphire is classified as one of the most difficult materials to machine due to its hardness and brittleness. Recently, a lap-grinding process has been developed to combine the lapping and diamond mechanical polishing (DMP) steps in a single process. This paper studies, the effect of wafer surface roughness on the chemical mechanical polishing (CMP) process by pressure and abrasive concentration in the lap-grinding process of a sapphire wafer. In this experiment, the surface roughness of a sapphire wafer is measured after lap-grinding by varying the pressure and abrasive concentration of the slurry. CMP is carried out under pressure conditions of 4.27 psi, a plate rotation speed of 103 rpm, head rotation speed of 97 rpm, and slurry flow rate of 170 ml/min. The abrasive concentration of the CMP slurry was 20wt, implying that the higher the surface roughness after lapgrinding, the higher the material removal rate (MRR) in the CMP. This is likely due to the real contact area and actual contact pressure between the rough wafer and polishing pad during the CMP. In addition, wafers with low surface roughness after lap-grinding show lower surface roughness values in CMP processes than wafers with high surface roughness values; therefore, further research is needed to obtain sufficient surface roughness before performing CMP processes.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.479-482
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• 2007

InN nanograins were directly grown on $0.3^{\circ}$-miscut (toward M-plane) c-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) and their growth characteristics were investigated by utilizing x-ray scattering. Depending on the various growth parameters, the formation of InN was sensitively influenced. Six samples were grown by changing HCl flow rate, the substrate temperature and Ga/In source zone temperature. All the samples were grown on unintentionally $NH_3-pretreated$ sapphire substrates. By increasing the flow rate of HCl from 10 sccm to 20 sccm, the formation of GaN grains with different orientations was observed. On the other hand, when the substrate temperature was raised from $680^{\circ}C$ to $760^{\circ}C$, the increased substrate temperature dramatically suppressed the formation of InN. A similar behavior was observed for the samples grown with different source zone temperatures. By decreasing the source zone temperature from $460^{\circ}C$ to $420^{\circ}C$, a similar behavior was observed.

• Korean Journal of Optics and Photonics
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• v.10 no.5
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• pp.430-438
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• 1999

We have utilized soft-aperturing by gain media to develop a high-power tunable Ti:Sapphire laser with sub-40-fs and broad tuning range. The tunable spectral range was only limited by the bandwidth of mirrors. We made use of knife-edge slits near an intra-cavity prism controlled by micro-stepping-motors to tune the center wavelength continuously. The tunability of the center wavelength was ranged from 770 nm to 870 nm, and the measured pulsewidth was sub-40 fs throughout the above spectral range. The shortest pulsewidth was about 17 fs at the center wavelength of 820 nm and the spectral bandwidth was 72 nm. At 5 W pumping power of the Ar-ion laser we obtained average output power of 440 mW~580 mW. For the cw and Kerr-lens mode-lodking conditions, we have evaluated the value of an amplitude modulation to be ${\gamma}=2.5{\times}10^{-8}/W$ from the calculated waists of a Gaussian beam on the Ti:sapphire crystal surface. Using this result we demonstrate that the generation of sub-40-fs Kerr-lens mode-locked pulse can be described by the Ginzberg-Landau model which is a weak pulse shaping model.