• 월간산업보건
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• s.300
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• pp.27-34
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• 2013

• 월간산업보건
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• s.329
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• pp.19-23
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• 2015

• Proceedings of the Korean Institute of Resources Recycling Conference
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• 2005.10a
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• pp.281-288
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• 2005

실리콘웨이퍼 제조공정에서 발생되는 초산, 불산 및 질산을 함유한 폐혼산으로 부터 각 산을 분리한 후 재활용하기 위하여 기초 실험을 실시하였다. 용매추출 법을 이용하여 초산, 불산 및 질산을 분리하기 위해 최적 추출제를 선정 하였고, 단일 성분에서의 추출 및 탈거특성에 관해 조사하였다. 또한, 이성분계 혼합산에서 분배비를 조사하여 상호 분리성에 대해 검토하였다. 실험 결과 인산염계 추출제는 고급 알코올에 비해 각 산의 추출 능력이 높다는 것을 확인하였다. 초산과 질산의 이성분 혼합액에서는 고급 알코올을 사용하면 초산이 분배비가 높아 선택적으로 추출되는 것을 확인하였고, 초산과 불산의 이성분 혼합액에서도 인산염계 추출제 보다 고급 알코올 사용시 초산의 분배비가 높아 선택적으로 추출됨을 확인하였다. 한편, 질산과 불산의 혼합액에서는 인산염계 추출제를 사용하여 질산이 선택적으로 추출됨을 확인하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.127-127
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• 2016

일반적인 알루미늄 표면처리 방식중 De Smut 는 질산 50~60% 용액에 상온에서 수초에서 수분 침적으로 Smut가 거의 제거가 되므로 도금공정에서 문제가 되지않았다. 단지 NOx 의 발생으로 작업공간 에서의 환경이 열악해 질 수 있다는 것이 문제 였다, 그러나 환경문제에 있어서 정부의 질소 규제 가 시작 되면서 알루미늄을 재료로 표면처리 하는 업체 에서는 질산 사용이 곤란해 해졌다. 그러나 질산이 금속과 의 친화력은 스테인레스, 알루미늄, 등 많은 금속에서 소지금속의 용해를 방지 하면서 산화스케일( De Smut)을 제거하는 데 유용한 산이어서 아직도 이용되고 있는 실정이다. 본 연구에서 는 우선 스테인레스 강의 산세시 불산과 질산의 혼산을 사용 하는 것을 불산, 불화암모늄, 황산, 과산화 수소 혹은 불산, 염산, 과산화 수소 등으로 전환 사용 하는 것 에 착안 하여 황산, 과산화수소 시스템에서 혹은 불산, 황산, 과산화 수소, 등으로 Smut 제거가 가능 한지 알아보고 그 효과를 살펴보았다.

• 대한예방의학회:학술대회논문집
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• 1993.10a
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• pp.107-108
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• 1993

• Korean Chemical Engineering Research
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• v.45 no.2
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• pp.203-207
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• 2007

In this paper efficient method for particle removal from silicon wafers by usage of HF and ozone was studied. It was found that at least 0.3 vol% concentration of HF was required for particle removal and removal efficiency increased with the application of megasonic in ozonated water. Additional cleaning with minute amount of ammonia (0.01 vol%) after HF/Ozone step showed over 99% in removal efficiency. It is proposed that the superior cleaning efficiency of HF-Ozone-ammonia is due to micro-etching of silicon surface and impediment of particle re-adsorption in alkali environment. Compared to SC-1 cleaning method micro roughness has also been slightly improved. Therefore it is expected that HF-ozone-ammonia cleaning method is a viable alternative to the conventional wet cleaning methods.

• Resources Recycling
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• v.16 no.1 s.75
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• pp.59-67
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• 2007

Recovery of acids from the waste etching solution of containing acetic, nitric and hydrofluoric acid discharged from silicon wafer manufacturing process has been attempted by using solvent extraction method. EHA(2-Ethylhexlalcohol) for acetic acid and TBP(Tri-butly Phosphate) for nitric and hydrofluoric acid as a extraction agent was used to the experiment to obtain the process design data in separation procedure. From the experimental data and McCabe-Thiele diagram analysis, we obtained the optimum conditions of phase ratio(O/A) and stages to separate each acid sequently from the mixed acids. The recovery yield was obtained above 90% for acetic acid from the acid mixtures, 90% for nitric acid from acetic acid extraction raffinate and then above 67% for hydrofluoric acid from final extraction raffinate.

• Proceedings of the Korean Institute of Resources Recycling Conference
• /
• 2006.05a
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• pp.47-55
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• 2006

Recovery of acids from the waste etching solution of containing nitric, hydrofluoric and acetic acid discharged from silicon wafer manufacturing process has been attempted by using solvent extraction method. With EHA (2-Ethylhexlalcohol) for acetic acid and TBP(Tri-butly Phosphate) for nitic and hydrofluoric acid as extraction agent was carried on experiment to obtain the process design data in separation procedure. From the McCabe-Thiele diagram analysis, we obtained the optimum conditions of phase ratio(O/A) and stages to separate the each acid sequently from the mixture acids. The recovery yield was obtained 90% above for acetic acid from the acid mixtures, 90% above for nitric acid from acetic acid extraction raffinate and then 67% above for hydrofluoric acid from final extraction raffinate.

• Proceedings of KOSOMES biannual meeting
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• 2017.04a
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• pp.262-262
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• 2017

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.90-95
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• 2008

We studied the effect of thermal annealing and hydrofluoric (HF) acid treatment on the field emission properties of carbon nanotube field emitter arrays (CNT-FEAs) grown with the resist-assisted patterning (RAP) process. After thermal and HF treatment, it was observed that the electron emission properties were remarkably improved. The enhanced electron emission was also found to depend strongly on the sequence of the treatments; the electronemission current density is 656 $mA/cm^2$ with the process of thermal treatment prior to HF treatment while the current density is reduced by 426 $mA/cm^2$ with the reversal processes. This is due to the increased crystalline structure by thermal annealing and then strong fluorine bond was formed by HF treatment.