• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.48-57
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• 2006

This work describes a 12b 200KHz 0.52mA $0.47mm^2$ algorithmic ADC for sensor applications such as motor controls, 3-phase power controls, and CMOS image sensors simultaneously requiring ultra-low power and small size. The proposed ADC is based on the conventional algorithmic architecture with recycling techniques to optimize sampling rate, resolution, chip area, and power consumption. The input SHA with eight input channels for high integration employs a folded-cascode architecture to achieve a required DC gain and a sufficient phase margin. A signal insensitive 3-D fully symmetrical layout with critical signal lines shielded reduces the capacitor and device mismatch of the MDAC. The improved switched bias power-reduction techniques reduce the power consumption of analog amplifiers. Current and voltage references are integrated on the chip with optional off-chip voltage references for low glitch noise. The employed down-sampling clock signal selects the sampling rate of 200KS/s or 10KS/s with a reduced power depending on applications. The prototype ADC in a 0.18um n-well 1P6M CMOS technology demonstrates the measured DNL and INL within 0.76LSB and 2.47LSB. The ADC shows a maximum SNDR and SFDR of 55dB and 70dB at all sampling frequencies up to 200KS/s, respectively. The active die area is $0.47mm^2$ and the chip consumes 0.94mW at 200KS/s and 0.63mW at 10KS/s at a 1.8V supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.3
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• pp.60-68
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• 2009

This work proposes a 10b 200MS/s 65nm CMOS ADC for high-definition video systems such as HDTV requiring high resolution and fast operating speed simultaneously. The proposed ADC employs a four-step pipeline architecture to minimize power consumption and chip area. The input SHA based on four capacitors reduces the output signal range from $1.4V_{p-p}$ to $1.0V_{p-p}$ considering high input signal levels at a low supply voltage of 1.2V. The proposed three-stage amplifiers in the input SHA and MDAC1 overcome the low output resistance problem as commonly observed in a 65nm CMOS process. The proposed multipath frequency-compensation technique enables the conventional RNMC based three-stage amplifiers to achieve a stable operation at a high sampling rate of 200MS/s. The conventional switched-bias power-reduction technique in the sub-ranging flash ADCs further reduces power consumption while the reference generator integrated on chip with optional off-chip reference voltages allows versatile system a locations. The prototype ADC in a 65nm CMOS technology demonstrates a measured DNL and INL within 0.19LSB and 0.61LSB, respectively. The ADC shows a maximum SNDR of 54.BdB and 52.4dB and a maximum SFDR of 72.9dB and 64.8dB at 150MS/S and 200MS/s, respectively. The proposed ADC occupies an active die area of $0.76mm^2$ and consumes 75.6mW at a 1.2V supply voltage.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.9
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• pp.63-73
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• 2015

This work proposes a 2-channel time-interleaved (T-I) 10b 120MS/s pipeline SAR ADC minimizing offset mismatch between channels without any calibration scheme. The proposed ADC employs a 2-channel SAR and T-I topology based on a 2-step pipeline ADC with 4b and 7b in the first and second stage for high conversion rate and low power consumption. Analog circuits such as comparator and residue amplifier are shared between channels to minimize power consumption, chip area, and offset mismatch which limits the ADC linearity in the conventional T-I architecture, without any calibration scheme. The TSPC D flip-flop with a short propagation delay and a small number of transistors is used in the SAR logic instead of the conventional static D flip-flop to achieve high-speed SAR operation as well as low power consumption and chip area. Three separate reference voltage drivers for 4b SAR, 7b SAR circuits and a single residue amplifier prevent undesirable disturbance among the reference voltages due to each different switching operation and minimize gain mismatch between channels. High-frequency clocks with a controllable duty cycle are generated on chip to eliminate the need of external complicated high-frequency clocks for SAR operation. The prototype ADC in a 45nm CMOS technology demonstrates a measured DNL and INL within 0.69LSB and 0.77LSB, with a maximum SNDR and SFDR of 50.9dB and 59.7dB at 120MS/s, respectively. The proposed ADC occupies an active die area of 0.36mm2 and consumes 8.8mW at a 1.1V supply voltage.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.5
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• pp.87-97
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• 2016

This work proposes a time-shared 10b DAC based on a two-step resistor string to minimize the effective area of a DAC channel for driving each AMOLED display column. The proposed DAC shows a lower effective DAC area per unit column driver and a faster conversion speed than the conventional DACs by employing a time-shared DEMUX and a ROM-based two-step decoder of 6b and 4b in the first and second resistor string. In the second-stage 4b floating resistor string, a simple current source rather than a unity-gain buffer decreases the loading effect and chip area of a DAC channel and eliminates offset mismatch between channels caused by buffer amplifiers. The proposed 1-to-24 DEMUX enables a single DAC channel to drive 24 columns sequentially with a single-phase clock and a 5b binary counter. A 0.9pF sampling capacitor and a small-sized source follower in the input stage of each column-driving buffer amplifier decrease the effect due to channel charge injection and improve the output settling accuracy of the buffer amplifier while using the top-plate sampling scheme in the proposed DAC. The proposed DAC in a $0.18{\mu}m$ CMOS shows a signal settling time of 62.5ns during code transitions from '$000_{16}$' to '$3FF_{16}$'. The prototype DAC occupies a unit channel area of $0.058mm^2$ and an effective unit channel area of $0.002mm^2$ while consuming 6.08mW with analog and digital power supplies of 3.3V and 1.8V, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.3 s.118
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• pp.248-256
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• 2007

In this paper, we propose a selective DFT spreading method to solve a high PAPR problem in uplink OFDMA system. A selective characteristic is added to the DFT spreading, so the DFT spreading method is mixed with SLM method. However, to minimize increment of computational complexity, differently with common SLM method, our proposed method uses only one DFT spreading block. After DFT, several copy branches are generated by multiplying with each different matrix. This matrix is obtained by linear transforming the each phase rotation in front of DFT block. And it has very lower computational complexity than one DFT process. For simulation, we suppose that the 512 point IFFT is used, the number of effective sub-carrier is 300, the number of allowed sub-carrier to each user's is 1/4 and 1/3 and QPSK modulation is used. From the simulation result, when the number of copy branch is 4, our proposed method has more than about 5.2 dB PAPR reduction effect. It is about 1.8 dB better than common DFT spreading method and 0.95 dB better than common SLM which uses 32 copy branches. And also, when the number of copy branch is 2, it is better than SLM using 32 copy branches. From the comparison, the proposed method has 91.79 % lower complexity than SLM using 32 copy branches in similar PAPR reduction performance. So, we can find a very good performance of our proposed method. Also, we can expect the similar performance when all number of sub-carrier is allocated to one user like the OFDM.