• Title/Summary/Keyword: 변조구조

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A Design of 16-QAM Modulator by use of Direct Digital Frequency Synthesizer (디지탈 직접 주파수 합성기를 이용한 16-QAM 변조기 설계)

  • 유상범;유흥균
    • The Journal of the Acoustical Society of Korea
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    • v.18 no.5
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    • pp.52-57
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    • 1999
  • It is very important to design of QAM modulator of high spectral efficiency for high speed data transmission. In this paper, typical 16-QAM modulator is designed by modification design of DDFS(direct digital frequency synthesizer). DDFS generates sinusoidal waveform digitally to the frequency setting word. Phase modulation is accuratly made by control of a generated phase increment value and amplitude modulation is accomplished in the D/A converter output by control of amplitude level. For the suppression of harmonics and glitch, dual-structured DDFS is studied to improve the spurious characteristics. P-Spice is used for design and simulation in mixed mode. Also we can get the satisfactory results of designed 16-QAM modulator from the constellation output.

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Design of Electrodes of the Tapered Region of the Traveling-Wave Optical Modulator: SOR Method (진행파 광변조기의 Taper영역 전극 설계 : SOR기법)

  • 정석원;김창민
    • Korean Journal of Optics and Photonics
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    • v.7 no.1
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    • pp.77-86
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    • 1996
  • We employ the SOR method to analyze CPW electrodes of Ti:$LiNbO_3$ Mach-Zehnder traveling-wave optical modulator in the tapered region of an optical modulator. In the tapered region of the modulator, we design the electrodes satisfying $Z_c=50{\Omega}$. In the modulation region, we find two find sets of design parameters. One set is for $Z_c=50{\Omega}$, $n_{eff}=2.26$ and the another is for $n_{eff}=2.2$, $Z_c=47.7{\Omega}$.

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Unequal Power MIMO SM Scheme for Different Modulation Orders (다른 변조 차수를 위한 비균등 전력을 이용한 MIMO SM 기법)

  • Seo, Jae Hyun;Kim, Heung Mook;Kim, Hong Jung;Jung, Tae Jin
    • Proceedings of the Korean Society of Broadcast Engineers Conference
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    • 2012.07a
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    • pp.181-182
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    • 2012
  • 본 논문에서는 DVB-NGH 시스템에서 수직-수평 편파 안테나를 이용한 $2{\times}2$ MIMO SM 기법 중 두 안테나에 서로 다른 변조 차수를 가진 신호를 전송할 경우 비균등 전력을 이용하여 수신 성능을 향상시키는 기법을 제안한다. 이를 위해 기존의 MIMO SM 구조와 비교해 서로 다른 변조 차수를 가진 신호에 비균등 전력을 포함하는 송수신 시스템의 구조를 도입하였다. 전산실험 결과 LDPC 부호율이 각각 4/9, 2/3에서 비트오류율이 $10^{-4}$의 조건에서 0.2, 0.5 dB의 성능 향상이 있음을 확인할 수 있다.

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Harmonic mode locking of 'Figure-of-Eight' fiber soliton laser using regenerative phase modulation (재생형 위상 변조에 의한 '8'자 구조 광섬유 솔리톤 레이저의 고차 조화 모드록킹)

  • 윤승철;박희갑
    • Korean Journal of Optics and Photonics
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    • v.10 no.2
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    • pp.146-151
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    • 1999
  • We demonstrated a harmonic mode locking scheme that used regeneratie phase modulation to get a high and stable repetition rate in a figure-of-eight fiber soliton laser. From the detected beat spectra of the laser output, a sinusoidal clock freguency tone of 400 MHz, the 96th harmonics of the fundamental mode locking frequency, was extracted with a high Q filter and was used to drive the phase modulator, resulting in stable output of soliton pulse train synchronized with the modulation signal. Generated soliton pulses had FWHM pulsewidth of 930 fs and 3.1 nm linewidth, yielding pulsewidth-bandwidth product of 0.359 that was close to the transform limit. As the modulation frequency always followed the beat frequency of laser modes, stable harmonic mode locking was achieved without the adjustment of the cavity length, which has been commonly required in actively mode-locked lasers.

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Demonstration of RSOA based Bidirectional WDM-POM by using Suppressed Optical Carrier Modulation (RSOA기반 반송파 억제된 광변조를 이용한 양방향 WDM-PON 구현)

  • Kim, Dong-Hyeon;Lee, Dae-Won;Won, Young-Wuk;Park, Soo-Jin;Han, Sang-Kook
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.32 no.12B
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    • pp.809-814
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    • 2007
  • In this paper, we proposed new method of a bidirectional WDM-PON transmission using suppressed optical carreir(SOC) and reflective semi-conductor optical amplifier(RSOA) based on WDM-PON. while LiNbO3 mach zehnder modulator(LN-MZM) generates 5GHz modulated SOC for uplink at central office(CO), RSOA at CO modulates the downstream data. At optical network units(ONUs), Another RSOA modulates the SOC light source for uplink at ONU and uplink data are up-converted to the 5 GHz already modulated SOC using LN-MZM.

Study on the Design and Fabrication of Traveling-Wave Ti:LiNbO$_3$Phase Optical Modulators (진행파형 Ti:LiNbO$_3$위상 광변조기 설계 및 제작에 관한 연구)

  • 정홍식;서정하;엄진섭
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.19 no.9
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    • pp.1782-1792
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    • 1994
  • Ti : $LiNbO_3$ traveling-wave phase optical modulators at wavelength 1.3㎛ have been designed and fabricated, focusing on the optical waveguide and asymmetric coplanar electrode structure. To improve the phase-mismatch of traveling-wave ACPS electrode, the characteristic impedance, effective microwave index, and electrode loss have been presented as a function of geometric parameters including electrode and buffer layer thickness. Low-loss channel optical waveguides on $LiNbO_3$ were fabricated by the Ti diffusion method with $O_2$ water-vapor environment. $2.5{\mu}m$ thick electrode was successfully fabricated by double-spin image reversal process. Modulation bandwidth was limited by a resonance at 2.9 GHz and modulation bandwidth up to 2.5GHz was approxirnately measured.

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A Study on the Transport Mechanism of a SCH Quantum-Well Laser Diode and on the Modulation Characteristics (SCH 양자우물 레이저 다이오드의 수송기구와 변조응답 특성에 관한 연구)

  • Kim, Jong-Gi;Jeong, Jea-Yong;Suh, Chung-Ha
    • Journal of the Institute of Electronics Engineers of Korea TE
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    • v.37 no.1
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    • pp.27-34
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    • 2000
  • In this paper, carrier transport mechanism and modulation response for SCH(Separate Confinement Heterostructure) SQW(Single Quantum Well) laser diodes were studied. In order to explain carrier transport mechanism, both carrier density and current density were calculated. The recombination current density in the quantum well as a function of the SCH length was also calculated. For the modulation response, linearizing the rate equation, we calculated the bandwidth, relaxation oscillation frequency, damping factor, and the K-factor.

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Design of the New Third-Order Cascaded Sigma-Delta Modulator for Switched-Capacitor Application (스위치형 커패시터를 적용한 새로운 형태의 3차 직렬 접속형 시그마-델타 변조기의 설계)

  • Ryu Jee-Youl;Noh Seok-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2006.05a
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    • pp.906-909
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    • 2006
  • This paper proposes a new body-effect compensated switch configuration for low voltage and low distortion switched-capacitor (SC) applications. The proposed circuit allows rail-to-rail switching operation for low voltage SC circuits and has better total harmonic distortion than the conventional bootstrapped circuit by 19 dB. A 2-1 cascaded sigma-delta modulator is provided for performing the high-resolution analog-to-digital conversion on audio codec in a communication transceiver. An experimental prototype for a single-stage folded-cascode operational amplifier (opamp) and a 2-1 cascaded sigma-delta modulator has been implemented in a 0.25 micron double-poly, triple-metal standard CMOS process with 2.7 V of supply voltage.

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Built-in voltage depending on Ba layer thickness in organic light-emitting diodes (유기 발광 소자에서 Ba층의 두께에 따른 내장 전압)

  • Lee, Eun-Hye;Yoon, Hee-Myoung;Kim, Tae-Wan;Han, Wone-Keun;Lee, Won-Jae;Oh, Hyun-Seok;Lim, Jong-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.372-372
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    • 2007
  • 유기 발광 소자에서의 내장 전압을 변조 광전류를 이용하여 측정하였다. 내장 전압은 양극의 일함수와 음극의 일함수 차이에 해당한다. 실험적으로는 유기 발광 소자에 500W Xenon light(ORIEL Instruments 66021)로부터 나온 빛을 chopper(Stanford Research SR540)를 통해 유기 발광 소자에 조사시키면 소자에서 발생한다. 변조 광전류를 lock-in amplifier(Stanford Research SR530)를 이용하여 변조 광전류의 크기와 위상을 측정할 수 있다. 이때 변조 광전류 크기가 최소가 될 때의 외부 인가 전압을 내장 전압이라고 한다. 본 연구에서 사용한 소자의 구조는 양극/$Alq_3$/음극 구조이며, 양극으로는 ITO 혹은 ITO/PEDOT:PSS를 사용하였고, 음극으로는 Ba/Al을 사용하였다. 발광 층으로는 $Alq_3$(150nm)를 사용하였다. Ba층의 두께는 0nm에서 3nm까지 변화시켰다. Ba이 금속의 역할을 하기 위해서는 두께가 20nm 이상은 되어야 한다. 그러나 본 연구에서는 Ba의 두께가 최대 3nm이므로 금속의 역할은 하지 않을 것으로 예상되며, 음극의 일함수에 약간의 영향을 주었을 것으로 생각된다. 내장 전압은 ITO/$Alq_3$(150nm)/Ba/Al 소자 구조에서 1V를 얻었고, ITO/PEDOT:PSS/$Alq_3$(150nm)/Ba/Al 소자 구조에서는 2V로 나타났다. ITO와 Ba/Al 전극 사이에 PEDOT:PSS 층을 주입함으로써 내장 전압은 약 1V 증가하였다. 이것으로, Ba의 두께가 얇으면 음극의 전자 주입 장벽에 영향을 거의 미치지 않는다는 것을 알 수가 있다.

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