• Title/Summary/Keyword: 반응소결 탄화규소

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Fabrication and Characteristics of Silicon Nitride Bonded Silicon Carbide-based Slurry Nozzle for Desulfurization with Variation of Sintering Conditions (소결조건의 변화에 따른 질화규소계 탄화규소질 탈황분사 슬러리 노즐의 제조 및 특성)

  • Woo, Sang-Kuk;Han, In-Sub;Seo, Doo-Won;Lee, Kee-Sung;Hong, Ki-Seok;Bai, Kang;Lim, Kwang-Hyun
    • Proceedings of the Korea Society for Energy Engineering kosee Conference
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    • 2002.11a
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    • pp.201-207
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    • 2002
  • 배가스 탈황 공정은 흡수제의 형태에 따라 습식과 건식, 반응생성물로부터 흡수제의 회수여부에 따라 재생법과 비재생법으로 분류할 수 있으며, 현재 전 세계적으로 상용화되고 있는 처리공정은 비재생 습식 석회석-석고 공정이 채택되어 전체 설치용량의 80% 이상을 점유하고 있다.(중략)

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Joining of Reaction Bonded SiC using Preceramic Polymer (고분자 세라믹 전구체를 이용한 반응 소결 탄화규소의 접합)

  • Lee, Dong-Hwa;Kim, Deug-Jooug
    • Journal of Powder Materials
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    • v.15 no.1
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    • pp.58-62
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    • 2008
  • Reaction bonded silicon carbide (RBSiC) is an important engineering ceramic because of its high strength and stability at elevated temperatures, and it is currently fabricated using reasonably cheap manufacturing processes, some of which have been used since the 1960s. However, forming complicated shapes from these materials is difficult because of their poor workability. The purpose of this work is to join the reaction-bonded SiC parts using a preceramic polymer as joint material. The manufacturing of ceramic material in the system Si-O-C from preceramic silicon containing polymers such as polysiloxanes has attained particular interest. The mixtures of preceramic polymer and filler materials, such as SiC, Si and MoSi, were used as a paste for the joining of reaction sintered SiC parts. The joining process during the annealing in Ar atmosphere at $1450^{\circ}C$ were described. The maximum strength of the joints was 63 MPa for the specimen joined with 10 vol.% of $MoSi_2$ and 30 vol.% of SiC as filler materials. Fracture occurred in the joining layer. This indicates that the joining strength is limited by the strength of the joint materials.

Effect of the SiC Size on the Thermal and Mechanical Properties of Reaction-bonded Silicon Carbide Ceramics (반응소결 탄화규소 세라믹스의 열물성과 기계적 특성에 미치는 SiC 크기의 영향)

  • Kwon, Chang-Sup;Oh, Yoon-Suk;Lee, Sung-Min;Han, Yoonsoo;Shin, Hyun-Ick;Kim, Youngseok;Kim, Seongwon
    • Journal of Powder Materials
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    • v.21 no.6
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    • pp.467-472
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    • 2014
  • RBSC (reaction-bonded silicon carbide) represents a family of composite ceramics processed by infiltrating with molten silicon into a skeleton of SiC particles and carbon in order to fabricate a fully dense body of silicon carbide. RBSC has been commercially used and widely studied for many years, because of its advantages, such as relatively low temperature for fabrication and easier to form components with near-net-shape and high relative density, compared with other sintering methods. In this study, RBSC was fabricated with different size of SiC in the raw material. Microstructure, thermal and mechanical properties were characterized with the reaction-sintered samples in order to examine the effect of SiC size on the thermal and mechanical properties of RBSC ceramics. Especially, phase volume fraction of each component phase, such as Si, SiC, and C, was evaluated by using an image analyzer. The relationship between microstructures and physical properties was also discussed.

Mechanical Strength Values of Reaction-Bonded-Silicon-Carbide Tubes with Different Sample Size (튜브형상 반응소결 탄화규소 부품의 시편크기에 따른 강도평가 유용성 고찰)

  • Kim, Seongwon;Lee, Soyul;Oh, Yoon-Suk;Lee, Sung-Min;Han, Yoonsoo;Shin, Hyun-Ick;Kim, Youngseok
    • Journal of Powder Materials
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    • v.24 no.6
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    • pp.450-456
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    • 2017
  • Reaction-bonded silicon carbide (RBSC) is a SiC-based composite ceramic fabricated by the infiltration of molten silicon into a skeleton of SiC particles and carbon, in order to manufacture a ceramic body with full density. RBSC has been widely used and studied for many years in the SiC field, because of its relatively low processing temperature for fabrication, easy use in forming components with a near-net shape, and high density, compared with other sintering methods for SiC. A radiant tube is one of the most commonly employed ceramics components when using RBSC materials in industrial fields. In this study, the mechanical strengths of commercial RBSC tubes with different sizes are evaluated using 3-point flexural and C-ring tests. The size scaling law is applied to the obtained mechanical strength values for specimens with different sizes. The discrepancy between the flexural and C-ring strengths is also discussed.

Effects of Amounts of Carbon Source and Infiltrated Si on the Porosity and Fracture Strength of Porous Reaction Bonded SiC (침윤된 Si 및 성형체내 Carbon Source의 양이 반응소결 탄화규소 다공체의 기공률 및 파괴강도에 미치는 영향)

  • Yun, Sung-Ho;Tan, Phung Nhut;Kim, Young-Do;Park, Sang-Whan
    • Journal of the Korean Ceramic Society
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    • v.44 no.7
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    • pp.381-386
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    • 2007
  • A porous reaction bonded silicon carbide (RBSC) was fabricated by a molten Si infiltration method. The porosity and flexural strength of porous RBSC fabricated in this study were dependent upon the amount of carbon source used in the SiC/carbon preform as well as the amount of Si infiltrated into the SiC/carbon preform. The porosity and flexural strength of porous RBSC were in the range of $20 vo1.{\sim}49 vo1.%$ and $38{\sim}61 MPa$, respectively. With increase of carbon contents and molten Si for infiltration, volume fraction of the pores was gradually decreased, and flexural strength was increased. The porous RBSCs fabricated with the same amount of molten Si show less residual Si around neck with increase of carbon source, as well as a new SiC was formed around neck which resulted in the decreased porosity and improvement of the flexural strength. In addition, decrease of the porosity and increase of the flexural strength were also obtained by increase of the amount of molten Si with the same amount of carbon source. However, it was found that the flexural strength of porous RBSC depends on the porosity rather than the amount of the newly formed SiC in neck phase between SiC particles used as a starting material.

Effect of Fillers on High Temperature Shrinkage Reduction of Geopolymers (충전재에 의한 지오폴리머의 고온수축 감소효과)

  • Cho, Young-Hoon;An, Eung-Mo;Chon, Chul-Min;Lee, Sujeong
    • Resources Recycling
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    • v.25 no.6
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    • pp.73-81
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    • 2016
  • Geopolymers produced from aluminosilicate materials such as metakaolin and coal ash react with alkali activators and show higher fire resistance than portland cement, due to amorphous inorganic polymer. The percentage of thermal shrinkage of geopolymers ranges from less than 0.5 % to about 3 % until $600^{\circ}C$, and reaches about 5 ~ 7 % before melting. In this study, geopolymers paste having Si/Al = 1.5 and being mixed with carbon nanofibers, silicon carbide, pyrex glass, and vermiculite, and ISO sand were studied in order to understand the compressive strength and the effects of thermal shrinkage of geopolymers. The compressive strength of geopolymers mixed by carbon nanofibers, silicon carbide, pyrex glass, or vermiculite was similar in the range from 35 to 40 MPa. The average compressive strength of a geopolymers mixed with 30 wt.% of ISO sand was lowest of 28 MPa. Thermal shrinkage of geopolymers mixed with ISO sand decreased to about 25 % of paste. This is because the aggregate particles expanded on firing and to compensate the shrinkage of paste. The densification of the geopolymer matrix and the increase of porosity by sintering at $900^{\circ}C$ were observed regardless of fillers.

Thermoelectric properties of SiC prepared by refined diatomite (정제 규조토로 합성한 탄화규소의 열전특성)

  • Pai, Chul-Hoon
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.21 no.4
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    • pp.596-601
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    • 2020
  • Silicon carbide is considered a potentially useful material for high-temperature electronic devices because of its large band gap energy and p-type or n-type conduction that can be controlled by impurity doping. Accordingly, the thermoelectric properties of -SiC powder prepared by refined diatomite were investigated for high value-added applications of natural diatomite. -SiC powder was synthesized by a carbothermal reduction of the SiO2 in refined diatomite using carbon black. An acid-treatment process was then performed to eliminate the remaining impurities (Fe, Ca, etc.). n-Type semiconductors were fabricated by sintering the pressed powder at 2000℃ for 1~5h in an N2 atmosphere. The electrical conductivity increased with increasing sintering time, which might be due to an increase in carrier concentration and improvement in grain-to-grain connectivity. The carrier compensation effect caused by the remaining acceptor impurities (Al, etc.) in the obtained -SiC had a deleterious influence on the electrical conductivity. The absolute value of the Seebeck coefficient increased with increasing sintering time, which might be due to a decrease in the stacking fault density accompanied by grain or crystallite growth. On the other hand, the power factor, which reflects the thermoelectric conversion efficiency of the present work, was slightly lower than that of the porous SiC semiconductors fabricated by conventional high-purity -SiC powder, it can be stated that the thermoelectric properties could be improved further by precise control of an acid-treatment process.

RBSC Prepared by Si Melt Infiltration into the Y2O3 Added Carbon Preform (Y2O3 첨가 탄소 프리폼에 Si 용융 침투에 의해 제조한 반응 소결 탄화규소)

  • Jang, Min-Ho;Cho, Kyeong-Sik
    • Journal of Powder Materials
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    • v.28 no.1
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    • pp.51-58
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    • 2021
  • The conversion of carbon preforms to dense SiC by liquid infiltration is a prospectively low-cost and reliable method of forming SiC-Si composites with complex shapes and high densities. Si powder was coated on top of a 2.0wt.% Y2O3-added carbon preform, and reaction bonded silicon carbide (RBSC) was prepared by infiltrating molten Si at 1,450℃ for 1-8 h. Reactive sintering of the Y2O3-free carbon preform caused Si to be pushed to one side, thereby forming cracking defects. However, when prepared from the Y2O3-added carbon preform, a SiC-Si composite in which Si is homogeneously distributed in the SiC matrix without cracking can be produced. Using the Si + C → SiC reaction at 1,450℃, 3C and 6H SiC phases, crystalline Si, and Y2O3 were generated based on XRD analysis, without the appearance of graphite. The RBSC prepared from the Y2O3-added carbon preform was densified by increasing the density and decreasing the porosity as the holding time increased at 1,450℃. Dense RBSC, which was reaction sintered at 1,450℃ for 4 h from the 2.0wt.% Y2O3-added carbon preform, had an apparent porosity of 0.11% and a relative density of 96.8%.

Effect of Y2O3 Additive Amount on Densification of Reaction Bonded Silicon Carbides Prepared by Si Melt Infiltration into All Carbon Preform (완전 탄소 프리폼으로부터 Si 용융 침투에 의해 제조한 반응 소결 탄화규소의 치밀화에 미치는 Y2O3 첨가량의 영향)

  • Cho, Kyeong-Sik;Jang, Min-Ho
    • Korean Journal of Materials Research
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    • v.31 no.5
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    • pp.301-311
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    • 2021
  • The conversion of all carbon preforms to dense SiC by liquid infiltration can become a low-cost and reliable method to form SiC-Si composites of complex shape and high density. Reactive sintered silicon carbide (RBSC) is prepared by covering Si powder on top of 0.5-5.0 wt% Y2O3-added carbon preforms at 1,450 and 1,500℃ for 2 hours; samples are analyzed to determine densification. Reactive sintering from the Y2O3-free carbon preform causes Si to be pushed to one side and cracking defects occur. However, when prepared from the Y2O3-added carbon preform, an SiC-Si composite in which Si is homogeneously distributed in the SiC matrix without cracking can be produced. Using the Si + C = SiC reaction, 3C and 6H of SiC, crystalline Si, and Y2O3 phases are detected by XRD analysis without the appearance of graphite. As the content of Y2O3 in the carbon preform increases, the prepared RBSC accelerates the SiC conversion reaction, increasing the density and decreasing the pores, resulting in densification. The dense RBSC obtained by reaction sintering at 1,500 ℃ for 2 hours from a carbon preform with 2.0 wt% Y2O3 added has 0.20 % apparent porosity and 96.9 % relative density.

Bending Strength Properties of SiC Ceramics at Different Roughness Values of Polishing Plates (연마판의 거칠기에 따르는 SiC 세라믹스의 굽힘강도 특성)

  • Nam, Ki-Woo;Kim, Eun-Sun
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.35 no.7
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    • pp.779-784
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    • 2011
  • This study was carried out on the crack healing of three types of SiC ceramics based on a $SiO_2$ additive, taking into account the roughness of the polishing plate used for polishing the specimens. The mixtures were subsequently hot-pressed in $N_2$ gas for one hour under 35 MPa at 2053 K. In these specimens, the optimized crack-healing condition was 1373 K for one hour in air. The crack-healing material of the cracked part was the glassy phase of $SiO_2$ that was formed by the oxidation of SiC. In the optimum healing condition, the bending strength of non-polished SiC ceramics was not completely recovered. However, the bending strength of the SAY specimen was excellent, considering the economic aspects of SAY, SAYS-1, and SAYS-2. The SAY specimen is definitely superior to the others after an hour of heat treatment. There was a decrease in the number and size of defects in the specimen polished by using a $125-{\mu}m$ polishing plate; however, the micro-surface defects were not completely repaired. The specimen polished by using a 40-${\mu}m$ polishing plate showed little voids or surface defects after an hour of heat treatment. The bending strength of the specimen mirror-polished by using a 6-${\mu}m$ polishing plate was completely recovered.