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http://dx.doi.org/10.4191/KCERS.2007.44.7.381

Effects of Amounts of Carbon Source and Infiltrated Si on the Porosity and Fracture Strength of Porous Reaction Bonded SiC  

Yun, Sung-Ho (Department Materials Science and Engineering, Hanyang Univ.)
Tan, Phung Nhut (Department Materials Science and Engineering, Sungkyunkwan Univ.)
Kim, Young-Do (Department Materials Science and Engineering, Hanyang Univ.)
Park, Sang-Whan (Korea Institute of Science and Technology)
Publication Information
Journal of the Korean Ceramic Society / v.44, no.7, 2007 , pp. 381-386 More about this Journal
Abstract
A porous reaction bonded silicon carbide (RBSC) was fabricated by a molten Si infiltration method. The porosity and flexural strength of porous RBSC fabricated in this study were dependent upon the amount of carbon source used in the SiC/carbon preform as well as the amount of Si infiltrated into the SiC/carbon preform. The porosity and flexural strength of porous RBSC were in the range of $20 vo1.{\sim}49 vo1.%$ and $38{\sim}61 MPa$, respectively. With increase of carbon contents and molten Si for infiltration, volume fraction of the pores was gradually decreased, and flexural strength was increased. The porous RBSCs fabricated with the same amount of molten Si show less residual Si around neck with increase of carbon source, as well as a new SiC was formed around neck which resulted in the decreased porosity and improvement of the flexural strength. In addition, decrease of the porosity and increase of the flexural strength were also obtained by increase of the amount of molten Si with the same amount of carbon source. However, it was found that the flexural strength of porous RBSC depends on the porosity rather than the amount of the newly formed SiC in neck phase between SiC particles used as a starting material.
Keywords
Porous RBSC; Infiltration; Si melt; Silicon carbide;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
Times Cited By SCOPUS : 6
연도 인용수 순위
1 U.S. patent US4710428
2 H. W. Kim, H. E. Kim, H. S. Song, and J. W. Ha, 'Effect of Oxidation on the Room-temperature Flexural Strength of Reaction-bonded Silicon Carbides,' J. Am. Ceram. Soc., 82 [6] 1601-04 (1999)   DOI
3 J. N. Ness and T. F. Page, 'Microstructural Characterization of Reaction-bonded Silicon Carbide,' J. Mat. Sci., 21 1377- 97 (1998)   DOI
4 C. B. Lim, 'Microstructure Control of Reaction Sintered Silicon Carbide,' Ph. D. thesis, Tokyo Inst. of Tech., September, 1989
5 K. S. Seo and S. W. Park, 'Fabrication of Porous RBSC by Si Melt Infiltration(in Korean),' J. Kor. Ceram. Soc., 37 [11] 1119-25 (2000)   과학기술학회마을
6 U.S. patent US4532091
7 U.S. patent US4564496
8 Metals Handbook, Desk Edition second, J. R. Davis, and Davis & Associate, ASM international, p. 1405, 1998
9 R. W. Rice, J. Mater. Sci., 28 2187 (1993)   DOI
10 R. W. Rice, J. Mater. Sci., 31 102 (1996)   DOI
11 P. Popper, 'The Preparation of Dense Self-bonded SiliconCarbide,' pp. 207-19, Special Ceramics, Heywood, London, 1960
12 J. N. Ness and T. F. Page, 'Microstructural Characterization of Reaction-bonded Silicon Carbide,' J. Mater. Sci., 21 1377-97 (1986)   DOI