• Title/Summary/Keyword: 반도체-디스플레이장비

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Fault Detection for Ceramic Heater in CVD Equipment using Zero-Crossing Rate and Gaussian Mixture Model (영교차율과 가우시안 혼합모델을 이용한 박막증착장비의 세라믹 히터 결함 검출)

  • Ko, JinSeok;Mu, XiangBin;Rheem, JaeYeol
    • Journal of the Semiconductor & Display Technology
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    • v.12 no.2
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    • pp.67-72
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    • 2013
  • Temperature is a critical parameter in yield improvement for wafer manufacturing. In chemical vapor deposition (CVD) equipment, crack defect in ceramic heater leads to yield reduction, however, there is no suitable ceramic heater fault detection system for conventional CVD equipment. This paper proposes a short-time zero-crossing rate based fault detection method for the ceramic heater in CVD equipment. The proposed method measures the output signal ($V_{pp}$) of RF filter and extracts the zero-crossing rate (ZCR) as feature vector. The extracted feature vectors have a discriminant power and Gaussian mixture model (GMM) based fault detection method can detect fault in ceramic heater. Experimental results, carried out by measured signals provided by a CVD equipment manufacturer, indicate that the proposed method detects effectively faults in various process conditions.

$EU^{2+}$ Activated Green Phosphor $Ba_{2}CaMgSi_{2}O_{8}:Eu^{2+}$

  • Kim, Jeong-Seog;Piao, Ji-Zhe;Choi, Jin-Ho;Cheon, Chae-Il;Park, Joo-Suk
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2004.05a
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    • pp.97-100
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    • 2004
  • We report $EU^{2+}$ activated green phosphor $Ba_{2}CaMgSi_{2}O_{8}:Eu^{2+}$. The phosphor absorbs ultroviolet radation and emits a green visible light. The phosphors were synthesized by conventional solid state reaction method. The high purity $BaCO_3$, $CaCO_3$, MgO, $SiO_2$, $Eu_{2}O_{3}$ were used as raw materials. The raw materials were mixed thoroughly with an appropriate amount of ethanol in an agate mortar and then dried at $90^{\circ}C$ for 2 hours. The mixture was sintered at $900^{\circ}C$ for 2 hours and reheated at the mild reducing atmosphere 5% $H_2$ gas mixed with 95% $N_2$ gas at about $900^{\circ}C$ to $1200^{\circ}C$ for 2 hours. The photoluminescence spectra of the phosphor powders were measured by a fluorescent spectrophotometer. The crystal structure of phosphor powders were investigated by X -ray diffractometer.

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Expriments on a High Precision Planar Magnetic Levitation Stage Structure

  • Lee, Se-Han;Caraiani, Mitica;Jeon, Jeong-Woo;Lee, Ki-Chang;Kim, Yong-Joo
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2004.05a
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    • pp.179-184
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    • 2004
  • This paper is an overview of the experimental work using a Planar Magnetic Levitation Stage System structure proposed by Dr. Won-Jong Kim in his PhD thesis. Based on his results, we built an Experimental Test Stand (ETS), which enabled us to get accustomed with the new technology and to create new control structures and algorithms. The ETS is controlled by a powerful controller made of 4 DSPs mastered by a PC. This controller structure increases the controller bandwidth up to 10 kHz leading to a better emulation of an analog controller and leaving enough room for further development. Based on analyzing all the factors that can affect the performances of the system, we achieved a great accurate positioning performance of sub-nanometer RMS value.

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A Study on the Equipment of Neutral Beam Assisted Deposition for MgO Protective Layer of High Efficient AC PDP (고효율 AC PDP용 MgO 보호막 형성을 위한 중성빔 보조 증착 장비에 관한 연구)

  • Li, Zhao-Hui;Kwon, Sang-Jik
    • Journal of the Semiconductor & Display Technology
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    • v.7 no.2
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    • pp.63-67
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    • 2008
  • The MgO protective layer plays an important role in plasma display panels (PDPs). Our previous work demonstrated that the properties of MgO thin film could be improved, which were deposited by ion beam assisted deposition (IBAD). However arc discharge always occurs during the IBAD process. To avoid this problem, oxygen neutral beam assisted deposition (NBAD) is used to deposit MgO thin films in this paper. The energy of the oxygen neutral beam was used as the parameter to control the deposition. The experimental results showed that the oxygen neutral beam energy was effective in determining in F/$F^+$ centers, crystal orientation, surface morphology of the MgO thin film, and the discharge characteristics of AC PDP. The lowest firing voltage $(V_f)$ and the highest secondary electron emission coefficient $(\gamma)$ were obtained when the neutral beam energy was 300 eV.

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Fabrication of Organic TFT wi th PVP Gate Insulating layer (PVP 게이트 절연막을 이용한 유기박막트랜지스터 제작)

  • Jang Ji-Geun;Seo Dong-Gyoon;Lim Yong-Gyu;Chang Ho-Jung;Oh Myung-Hwan
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2005.09a
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    • pp.83-88
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    • 2005
  • 유기 절연층을 갖는 유기 박막트랜지스터 (organic TFT)를 제작하여 소자 성능을 조사하였다. 유기 절연층의 형성에서는 polyvinyl 계열의 PVP(poly-4-vinylphenol)와 PVT(polyvinyltoluene)를 용질로, PGMEA (propylene glycol mononethyl ether acetate)를 용매로 사용하였다. 또한, 열경화성 수지인 poly(melamine-co-formaldehyde)를 경화제로 사용하여 유기 절연층의 cross-link 를 시도하였다. MIM 구조로 유기 절연층의 특정을 측정한 결과, PVT는 PVP에 비해 절연 특성이 떨어지는 경향을 보였다. 게이트 절연막의 제작에서 PVP를 cobpolymer 방식과 cross-linked 방식으로 실험 해 본 결과, cross-link 방식에서 낮은 누설전류 특성을 나타내었다. OTFT 제작에서는 PVP를 용질로, poly(melanine-co-formaldehyde)를 경화제로 사용한 cross-linked PVP 를 게이트 절연막으로 이용하였다. PVP copolymer($20\;wt\%$)에 $10\;wt\%$ poly(melamine- co-formaldehyde)를 혼합한 cross-linked PVP 를 게이트 절연막으로 사용하여 top contact 구조의 OTFT를 제작한 결과 약 $0.23\;cm^2/Vs$의 정공 이동도와 약 $0.4{\times}10^4$의 평균 전류점멸비를 나타내었다.

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Optimal Load Distribution of Transport ing System for Large Flat Panel Displays

  • Kim Jong Won;Jo Jang Gun;Cho Hyun Chan;Kim Doo Yong
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2005.09a
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    • pp.110-123
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    • 2005
  • This paper proposes an intelligent method for the optimal load distribution of two cooperating robots(TCRs) using fuzzy logic. The proposed scheme requires the knowledge of the robots' dynamics, which in turn depend upon the characteristics of large flat panel displays(LFPDs) carried by the TCRs. However, the dynamic properties of the LFPD are not known exactly, so that the dynamics of the robots, and hence the required joint torque, must be calculated for nominal set of the LFPD characteristics. The force of the TCRs is an important factor in carrying the LFPD. It is divided into external force and internal force. In general , the effects of the internal force of the TCRs are not considered in performing the load distribution in terms of optimal time, but they are essential in optimal trajectory planning: if they are not taken into consideration, the optimal scheme is no longer fitting. To alleviate this deficiency, we present an algorithm for finding the internal-force factors for the TCRs in terms of optimal time. The effectiveness of the proposed system is demonstrated by computer simulations using two three-joint planner robot manipulators.

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MEH-PPV 농도에 따른 유기발광다이오드의 전기$\centerdot$ 광학적 특성

  • 공수철;백인재;유재혁;임현승;장호정;장영철
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2005.09a
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    • pp.142-146
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    • 2005
  • 패턴화된 ITO (indium tin oxide)/Glass 기판 위에 정공수송층인 PEDOT:PSS [poly(3,4-othylenedioxythiophene):poly(styrene sulfolnate)]와 발광층인 MEH-PPV [poly(2-methoxy-5-(2-ethyhexoxy)-1,4phenylenvinylene)]를 사용하여 ITO/PEDOT:PSS/MEH-PPV/AI 구조를 갖는 고분자 유기 발광다이오드 (polymer light emitting diode: PLED)를 제작하였다. PLED 제작시 MEH-PPV 의 농도를 ($0.1\;wt\%\;{\~}\;0.9\;wt\%$) 변수로 하여 박막의 표면 거칠기와 박막 층의 마찰재수(friction coefficient) 측정을 통하여 농도에 따른 특성 변화를 조사하였다. MEH-PP 의 농도를 $0.1\;wt\%$ 에서 $0.9\;wt\%$ 로 증가함에 따라 발광 층의 RMS (root mean square)같은 1.72 nm 에서 1.00 nm 로 감소하여 거칠기가 개선되는 경향을 보여 주었다. 그러나 박막간의 마찰계수는 0.048 에서 0.035 로 감소하여 박막간의 접합상태가 나빠지는 현상을 나타내었다. 소자의 전기, 광학적 특성의 경우 MEH-PPV 농도가 $0.5\;{\~}\;0.9\;wt\%$ 범위에서 약 0.35 mA (at 9V)의 전류밀도를 나타내었으며, 최대 휘도는 $0.5\;wt\%$ 농도에서 $409\;cd/m^2$의 값을 나타내었다.

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Process Study of Direct Laser Lithographic System for Fabricating Diffractive Optical Elements with Various Patterns (다중 패턴의 회절광학소자 제작을 위한 레이저 직접 노광시스템의 공정 연구)

  • Kim, Young-Gwang;Rhee, Hyug-Gyo;Ghim, Young-Sik;Lee, Yun-Woo
    • Journal of the Semiconductor & Display Technology
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    • v.18 no.2
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    • pp.58-62
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    • 2019
  • Diffractive Optical Elements(DOEs) diffracts incident light using the diffraction phenomenon of light to generate a desired diffraction image. In recent years, the use of diffraction optics, which can replace existing refractive optical elements with flat plates, has been increased by implementing various optical functions that could not be implemented in refractive optical devices and by becoming miniaturized and compacted optical elements. Direct laser lithography is typically used to effectively fabrication such a diffractive optical element in a large area with a low process cost. In this study, the process conditions for fabricating patterns of diffractive optical elements in various shapes were found using direct laser lithographic system, and optical performance evaluation was performed through fabrication.

Design Alterations of a Chamfering Machine Structure for the Improved Surface Quality (가공 제품 품질 향상을 위한 면취장비의 설계 개선)

  • Yi, Il Hwan;Ro, Seung Hoon;Han, Dae Sung;Kim, Young Jo;Kil, Sa Geun;Park, In Kyu
    • Journal of the Semiconductor & Display Technology
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    • v.18 no.1
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    • pp.117-122
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    • 2019
  • Pipes are widely used in various industries such as automobile, anti-vibration devices, factories and ship building. Chamfering is one of the most critical processes in pipe manufacturing which removes burrs of the pipes for better surface quality. In most cases, the defects of the chamfered surface are originated from the structural vibrations of the chamfering machine. In this study, the dynamic characteristics of a chamfering machine have been analyzed though the experiment and the computer simulation. And the effects of the design parameters affecting the stability of the machine have been investigated to stabilize the machine structure and further to reduce structural vibrations. The result shows that design alterations to stabilize the machine can suppress the defects of the machined surface as well as the vibrations during chamfering.

Temperature Analysis of Electrostatic Chuck for Cryogenic Etch Equipment (극저온 식각장비용 정전척 쿨링 패스 온도 분포 해석)

  • Du, Hyeon Cheol;Hong, Sang Jeen
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.2
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    • pp.19-24
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    • 2021
  • As the size of semiconductor devices decreases, the etching pattern becomes very narrow and a deep high aspect ratio process becomes important. The cryogenic etching process enables high aspect ratio etching by suppressing the chemical reaction of reactive ions on the sidewall while maintaining the process temperature of -100℃. ESC is an important part for temperature control in cryogenic etching equipment. Through the cooling path inside the ESC, liquid nitrogen is used as cooling water to create a cryogenic environment. And since the ESC directly contacts the wafer, it affects the temperature uniformity of the wafer. The temperature uniformity of the wafer is closely related to the yield. In this study, the cooling path was designed and analyzed so that the wafer could have a uniform temperature distribution. The optimal cooling path conditions were obtained through the analysis of the shape of the cooling path and the change in the speed of the coolant. Through this study, by designing ESC with optimal temperature uniformity, it can be expected to maximize wafer yield in mass production and further contribute to miniaturization and high performance of semiconductor devices.