• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.6
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• pp.263-270
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• 2018

Recently, porous ceramic materials with anti-static performance are urgently needed for semiconductor and OLED/LCD display manufacturing industry. In this work, we fabricated porous titanium manganese oxide ceramics having the surface resistivity of $10^8-10^{10}$ ohm and enhanced mechanical strength by partial sintering method using nanosized titanium oxide. By addition of nano-sized titanium oxide in the matrix, neck formation between grains was strengthened, which remarkably increased flexural strength up to 170 MPa (@porosity: 15 %), 110 MPa (@porosity: 31 %), compared to 80 MPa (@porosity: 26 %) for pristine titanium manganese oxide ceramics. We evaluated the performances of our ceramics as air-floating module for OLED flexible display manufacturing devices.

• Journal of IKEEE
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• v.25 no.2
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• pp.315-321
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• 2021

In this paper, we have developed the multiple channel measurement system for IC Socket Test. The one can test the current-voltage measurements for pitting the several device specification, which analyze the thin current from several ㎂ to 5A with very low resistor mΩ. The increasement of the IC socket channel with lead pitch under 0.25 mm be need to perform several functions, concurrently. The system to perform these functions be designed to integrate several SMU(source measure unit) on board. So, we can reduce the 2 minutes test time per channel point to 40 sec, with daisy chain test method. Using by graphic interface, I-V curve mode and data logging technologies, we can implement the test flow methods and can make economies the time and cost.

• Journal of Convergence for Information Technology
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• v.11 no.6
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• pp.146-153
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• 2021

Recently, research on perovskite semiconductor materials has been performed, and the evaluation of properties using surface treatment for this material is the basis for subsequent studies. We studied the results of surface treatment of perovskite thin films exposed to air for about 6 months by generating oxygen plasma with an atmospheric pressure plasma equipment. The reason for exposure for 6 months is that the perovskite thin film is made of organic and inorganic substances, so when exposed to air, the surface changes through reaction with oxygen or water vapor. Therefore, this change is to investigate whether it is possible to restore the original film. The surface shape and the ratio of elements were analyzed by varying the process time from 1 s to 1200 s in an oxygen plasma atmosphere. It was found that the crystal grains change over a process time of 5 s or more. In order to maintain the properties of the deposited film, it is the optimal process condition between 2 s and 5 s.

• Journal of the Korean Society of Safety
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• v.38 no.3
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• pp.27-34
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• 2023

With the technological development of the semiconductor industry, the roles of electrical and thermal energy supply and control of semiconductor equipment in ultrafine processes have become very important. However, instances of electrical fires in the chiller heater, which is used for cooling in the semiconductor manufacturing process, are increasing. A fire occurs in combustibles due to high heat at the connection part of the chiller heater, that is, when the number of electrical wires in the connection part is reduced or when the wires are completely disconnected. In this study, the temperature characteristics were compared and analyzed through experiments and 3D simulations. The number of electrical wires, which is the connection part of the chiller heater, was reduced by 90%, 50%, 30%, 10%, and 5%, and the wires were completely disconnected. When the number of electrical wires was reduced by 5%, heat of up to 80℃ was generated, which is a relatively high temperature but insufficient to cause a fire in combustibles. Complete disconnection occurred due to the vibration of the motor and other components, and sparks and arcs were generated, resulting in a rapid increase in temperature to up to 680℃. When completely disconnected, the temperature increase was sufficient to cause a fire in the combustibles covering the terminal block. Therefore, in this study, the causes of electrical fires in chiller heaters were investigated and preventive measures were proposed by analyzing abnormal signals and thermal characteristics caused by the electrical wiring being reduced and completely disconnected.

• Proceedings of the Korea Information Processing Society Conference
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• 2007.11a
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• pp.991-994
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• 2007

최근 컴퓨터 기술의 발전과 네트워크의 개방화 그리고 무선 모바일 통신 기술의 비약적인 보급으로 인하여 컴퓨팅 환경을 이루고 있는 각종 장치(PC, 모바일 단말, 저장장치, 네트워크 기기 등)가 다양한 형태의 보안 위협에 노출되어 데이터의 유실, 조작, 유출되어 금전적인 피해를 입거나 프라이버시 침해를 받고 있다. 이러한 문제를 근본적으로 해소하기 위하여 설립된 TCG(Trusted Computing Group)는 세계적인 IT 핵심기업들을 중심으로 구성된 비영리 단체로서 PC 혹은 모바일 기기 등의 단말과 서버 장비 그리고 저장 장치 및 네트워크로 구성된 컴퓨팅 환경에서 보안성 향상 및 데이터의 신뢰성을 제고하기 위하여 TPM(Trusted Platform Module)이라는 반도체 칩을 신뢰의 기반(root of trust)으로 한 신뢰 플랫폼을 제안하고 있다. 한편 SaaS(Software as a Service)는 패키지 형태의 소프트웨어를 네트워크 서비스 형태로 바꾸어 사용량에 비례한 요금제로 과금하는 방식을 채택하고 사용자가 온디맨드로 요청한 서비스를 적시에 제공하는 기술로 최근 전세계적으로 각광을 받고 있다. 이때 다양한 컴퓨팅 환경 안의 사용자에게 높은 신뢰성과 보안성 그리고 연속성을 갖는 SaaS 서비스를 제공하고 데이터의 무결성 및 비밀유지와 정확한 서비스 사용시간을 기록하고 업로드하는 기능들을 제공하는 SaaS 플랫폼은 TPM기반의 신뢰컴퓨팅 기술을 통하여 쉽게 구현될 수 있다. 본 논문에서는 일시적으로 네트워크와 차단된 상태의 PC 혹은 모바일 단말에서도 위의 조건들을 만족하는 SaaS 서비스를 지원하는 신뢰 플랫폼이 가져야 할 기능들에 대하여 분석-도출한 후 그러한 기능들을 제공하는 컴포넌트로 구성된 신뢰형 SaaS 사용자 플랫폼을 설계하였다.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.39 no.4
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• pp.309-316
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• 2015

Numerical analysis and experimental verification of a thermal liquid mass flow meter (LMFM) were performed. The configuration of the LMFM was the same as a gas mass flow meter (GMFM), but the opposite results in temperature difference between upstream and downstream thermistors occurred. In the case of the gas, the convection depending on the flow of thermal mass was small and comparable to the conduction through the sensor tube wall. The temperature difference was proportional to the mass flow rate due to their interaction. For the liquid flow, the convection overwhelmed the wall conduction because of the large flow of thermal mass caused by high density. The temperature difference in this case was inversely proportional to the mass flow rate. The tube diameter and heater wiring width are important design parameters, and the optimized sensor can be used to measure and control the infinitesimal liquid flow rate.

• Fire Science and Engineering
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• v.26 no.5
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• pp.41-47
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• 2012

As a core process in the manufacture of state-of-the-art industrial technologies such as semiconductor and LCD, a clean room is the most important process which can affect the performance and quality of products drastically. Nevertheless, scientific research on comprehensive safety measures from a fire protection standpoint is not being carried out in Korea. This study aims to derive measures to improve smoke control systems by identifying performance and problems of smoke systems installed in clean rooms as an LCD manufacturing process and analyzing fire and evacuation simulations considering several scenarios. As a result of analysis of fires and smoke in a clean roomas an LCD manufacturing process, it is found to be necessary to stop air handling units through interlocking in case of a fire and exhaust smoke out of the room through the top of FAB in consideration of buoyancy of smoke. It is also found to be necessary to install quick response sprinkler heads and accessories to accelerate the response time, because the heat-accumulating performance of sprinkler heads decreases in this application. Despite its low density of dwelling due to the automation process, clean room is characterized by an array of complex production equipment and working environment requiring dustproof clothes, which makes it difficult to acquire evacuation safety performance. Thus, thorough control of danger factors in processes and periodic education and training are required. It is also necessary to establish a level of domestic technologies equivalent to the level of standards of advanced countries in fire protection.

• Korean Chemical Engineering Research
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• v.47 no.6
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• pp.715-719
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• 2009

The phase change electrode board for the bio-information detection through electrical property response of phase change material was developed in this study. We manufactured the electrode board using Aluminum first that is widely used in conventional semiconductor device process. Without further treatment, these aluminum electrodes tend to contain voids in PETEOS(plasma enhanced tetraethyoxysilane) material that are easily detected by cross-sectional SEM(Scanning Electron Microscope). The voids can be easily attacked and transformed into holes in between PETEOS and electrodes after etch back and washing process. In order to resolve this issue of Al electrode board, we developed a electrode board manufacturing method using low resistivity TiN, which has advantages in terms of the step-coverage of phase change($Ge_2Sb_2Te_5$, GST) thin film as well as thermodynamic stability, without etch back and washing process. This TiN material serves as the top and bottom electrode in PRAM(Phase-change Random Access Memory). The good connection between the TiN electrode and GST thin film was confirmed by observing the cross-section of TiN electrode board using SEM. The resistances of amorphous and crystalline GST thin film on TiN electrodes were also measured, and 1000 times difference between the amorphous and crystalline resistance of GST thin film was obtained, which is well enough for the signal detection.

• Journal of the Korean Society of Radiology
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• v.14 no.5
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• pp.517-522
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• 2020

Electron beam have many factors that affect dose distribution, so even if identical settings are used, they should be identified and used for radiation treatment, and the effects on the structures in the body are sensitive, making it difficult to investigate uniform dose distribution on tumors. In this study, a dosimeter was produced using PbI₂ which is a photoelectric material, and electrical characteristics were analyzed for 6, 9, and 12 MeV electronics in linear accelerators. The reproducibility test results showed that RSD were 1.1215%, 1.0160%, and 0.05137% respectively at 6, 9, and 12 MeV energies, indicating that the output signals were stable. The linearity evaluation results showed that the R² values of the reliability indicator for straight line trend lines were 0.9999, 0.9999, and 0.9994, respectively, at 6, 9, and 12 MeV, to confirm that the output signal was proportional to PbI₂ as dose increased. The PbI₂ dosimeter in this study is judged to be highly applicable to electromagnet measurement and is thought to be able to be used as a basic study of electron detector through photoelectric material.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.115-115
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• 1999

GaN는 직접천이형 wide band gap(3.4eV) 반도체로서 청색/자외선 발광소자 및 고출력 전자장비등에의 응용성 때문에 폭넓게 연구되고 있다. 이러한 넓은 분야의 응용을 위해서는 열 적으로 안정된 Ohmic contact을 반드시 실현되어야 한다. n-type GaN의 경우에는 GaN계면에서의 N vacancy가 n-type carrier로 작용하기 때문에 Ti, Al, 같은 금속을 접합하여 nitride를 형성함에 의해서 낮은 접촉저항을 갖는 Ohmic contact을 하기가 쉽다. 그러나 p-type의 경우에는 일 함수가 크고 n-type와 다르게 nitride가 형성되지 않는 금속이 Ohmic contact을 할 가능성이 많다. 시료는 HF(HF:H2O=1:1)에서 10분간 초음파 세척을 한 후 깨끗한 물에 충분히 헹구었다. 그런 후에 고순도 Ar 가스로 건조시켰다. Pd와 Ni은 열적 증착법(thermal evaporation)을 사용하여 p-GaN에 상온에서 증착하였다. 현 연구에서는 열처리에 의한 Pd의 clustering을 줄이기 위해서 wetting이 좋은 Ni을 Pd 증착 전과 후에 삽입하였으며, monchromatic XPS(x-ray photoelectron spectroscopy) 와 SAM(scanning Auger microscopy)을 사용하여 열처리 전과 40$0^{\circ}C$, 52$0^{\circ}C$ 그리고 695$0^{\circ}C$에서 3분간 열처리 후의 온도에 따른 morphology 변화, 계면반응(interfacial reaction) 및 벤드 휨(band bending)을 비교 연구하였다. Nls core level peak를 사용한 band bending에서 Schottky barrier height는 Pd/Ni bi-layer 접합시 2.1eV를, Ni/Pd bi-layer의 경우에 2.01eV를 얻었으며, 이는 Pd와 Ni의 이상적인 Schottky barrier height 값 2.38eV, 2.35eV와 비교해 볼 때 매우 유사한 값임을 알 수 있다. 시료를 후열처리함에 의해 52$0^{\circ}C$까지는 barrier height는 큰 변화가 없으나, $650^{\circ}C$에서 3분 열처리 후에 0.36eV, 0.28eV 만큼 band가 더 ？을 알 수 있었다. Pd/Ni 및 Ni/Pd 접합시 $650^{\circ}C$까지 후 열 처리 과정에서 계면에서 matallic Ga은 온도에 비례하여 많은 양이 형성되어 표면으로 편석(segregation)되어지나, In-situ SAM을 이용한 depth profile을 통해서 Ni/Pd, Pd/Ni는 증착시 uniform하게 성장함을 알 수 있었으며, 후열처리 함에 의해서 점차적으로 morphology 의 변화가 일어나기 시작함을 볼 수 있었다. 이는 $650^{\circ}C$에서 열처리 한후의 ex-situ AFM을 통해서 재확인 할 수 있었다. 이상의 결과로부터 GaN에 Pd를 접합 시 심한 clustering이 형성되어 Ohoic contact에 문제가 있으나 Pd/Ni 혹은 Ni/Pd bi-layer를 사용함에 의해서 clustering의 크기를 줄일 수 있었다. Clustering의 크기는 Ni/Pd bi-layer의 경우가 작았으며, $650^{\circ}C$ 열처리 후에 barrier height는 Pd/Ni bi-layer의 경우에도 Ni의 영향을 받음을 알 수 있었다.