• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.12
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• pp.19-26
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• 2005

We have studied the relationship between static mode behavior and dynamic characteristics of multiple transverse-mode VCSELs by measuring the modal L-I and I-V characteristics. Dependence of the resonance frequencies of RIN (relative intensity noise) spectra on the injection current can be understood by modal L-I characteristics and mode-coupling effects. Each transverse mode behaves as an independent diode laser with the different threshold current in large active-area VCSELs, and the multiple-step turn-on is observed when step-current input is applied. This multiple-step turn-on is a result of different turn-on delay times of the transverse modes. Since the multiple-step turn-on increases the rise-time significantly, the wide active-area VCSELs are not suitable for high-speed optical transmitters unless the input current is adjusted for single transverse-mode operation.

• Laser Solutions
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• v.16 no.3
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• pp.27-31
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• 2013

To engrave high-density circuit-line patterns in IC substrates, we applied a projection ablation technique in which a dielectric ($ZrO_2/SiO_2$) mask, a DPSS UV laser instead of an excimer laser, a refractive beam shaping optics and a galvo scanner are used. The line/space dimension of line patterns of the dielectric mask is $10{\mu}m/10{\mu}m$. Using a ${\pi}$ -shaper and a square aperture, the Gaussian beam from the laser is shaped into a square flap-top beam; and a telecentric f-${\theta}$ lens focuses it to a $115{\mu}m{\times}105{\mu}m$ flat-top beam on the mask. The galvo scanner before the f-${\theta}$ lens moves the beam across the scan area of $40mm{\times}40mm$. An 1:1 projection lens was used. Experiments showed that the widths of the engraved patterns in a buildup film ranges from $8.1{\mu}m$ to $10.2{\mu}m$ and the depths from $8.8{\mu}m$ to $11.7{\mu}m$. Results indicates that it is required to increase the projection ratio to enhance profiles of the engraved patterns.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.258-263
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• 2012

Fe-diluted Si alloys grown on p-type Si (100) substrates by pulsed-laser deposition method were studied for structural, electrical, and magnetic properties. The X-ray diffraction patterns for these alloy samples showed a few of peaks with cubic structures such as FeSi, $Fe_3Si$, and $Fe_4Si$. The Fe-composition in alloys are confirmed as Fe atomic percent about 1.25~6.49 % from energy dispersive spectroscopy measurement. The resistivity as a function of the reciprocal temperature was indicated an exponential increase with two activation energies of 5.21 and 7.79 meV. The maximum value of the magnetization at 10 K was about 100 emu/cc, and the ferromagnetism was also observed until 350 K from total magnetization as a function of temperature with applied magnetic field of 3,000 Oe.

• Korean Journal of Optics and Photonics
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• v.6 no.2
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• pp.142-147
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• 1995

Soliton pulse outputs are generated with figure '8' type erbium-doped fiber laser mode-locked by using a fiber loop mirror. The fiber loop mirror consists of an erbium-doped fiber amplifier at the one end of the loop, and 504 m-long dispersion-shifted fiber as a nonlinear medium. By pumping with a $1.48{\mu}m$ wavelength laser diode and adjusting the polarization controllers inside the loop, soliton pulses are generated with 1574 nm center wavelength and 1.2 nm linewidth. The soliton pulses are found randomly spaced within the fundamental period corresponding to cavity round trip time. The autocorrelation trace shows that the pulse width is 2.4 ps, which is in good agreement with the theoretical prediction. The pulsewidth- bandwidth product is found to be 0.348 which means that the pulses are nearly transform-limited.imited.

• Korean Journal of Optics and Photonics
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• v.28 no.2
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• pp.75-82
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• 2017

We present a new type of receiver-transmitter optical system that can be adapted to the sensor head of a displacement-measuring interferometer. The interferometer is utilized to control positioning error and repetition accuracy of a wafer, down to the order of 1 nm, in a semiconductor manufacturing process. Currently, according to the tendency of scale-up of wafers, an interferometer is demanded to measure a wider range of displacement. To solve this technical problem, we suggest a new type of receiver-transmitter optical system consisting of a GRIN lens-Collimating lens-Afocal lens system, compared to conventional receiver-transmitter using a single collimating lens. By adapting this new technological optical structure, we can improve coupling efficiency up to about 100 times that of a single conventional collimating lens.

• Journal of Convergence for Information Technology
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• v.9 no.5
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• pp.117-124
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• 2019

This paper discusses recent trends in the fabrication of semiconducting materials among the components of thin film transistors used in AMOLED display. In order to obtain a good semiconductor film, it is necessary to change the amorphous silicon into polycrystalline silicon. There are two ways to use laser and heat. Laser-based methods include sequential lateral solidification (SLS), excimer laser annealing (ELA), and thin-beam directional crystallization (TDX). Solid phase crystallization (SPC), super grain silicon (SGS), metal induced crystallization (MIC) and field aided lateral crystallization (FALC) were crystallized using heat. We will also study research for manufacturing large AMOLED displays.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.11
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• pp.17-28
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• 1995

In this paper, we developed a two-dimensional numerical simulator which could analyze the stripe geometry semiconductor laser diodes by modifying the commercial semiconductor device simulator, MEDICI. In order to study the characteristics of semiconductor laser diodes, it is necessary to solve the Helmholtz wave equation and photon rate equation in addition to the basic semiconductor equations. Also the recombination rates due to the spontaneous and the stimulated emissions should be included, which are very important recombination mechanisms in semiconductor laser diodes. Therefore, we included the solution routines which analyzed the Helmholtz wave equation and the photon rate equation and two important recombination rates to simulate the semiconductor laser diodes. Then we simulated the gain-guiding and index-guiding DH(Double Heterostructure) semiconductor laser diodes to verify the validity of the implemented functions. The results obtained from simulation are well consistent with the previously published ones. This allows us to know the operating characteristics of DH laser diodes and is expected to use as a tool for optimum design.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.11
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• pp.29-34
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• 1995

Mirror coating is applied to laser facets to improve properties of edge emitting laser diodes. In this experiment, InGaAsP/GaAs high power laser diodes were studied with respect to different degrees of anti-reflective coating. Sputterred $Al_{2}$O$_{3}$ was used as the coating material and the HR coating was kept constant at 90%. Threshold current density, differential quantum efficiency, emission wavelength and the operating current at 500mW were measured for a range of AR coating and compared with theoretically calculated values; that showed good agreements. Precise wavelength control is important for laser diodes for solid state pumping because of small absorption bandwidth. In addition, since these lasers operate under CW condition, a lowest possible operating current for a given power is desired in order to minimize the heat produced. From the results of this experiment, we were able to obtain a optimum range of AR coatings for minimum operating current. The wavelength can be varied up to 4nm within this range.

• Korean Journal of Optics and Photonics
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• v.4 no.2
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• pp.188-194
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• 1993

By applying the Nakayama's theory of saturation spectroscopy to 87Rb $D_2$ lines, taking into account the optical pumping process, the relative intensities of the resonance signals were calculated for various polarization combinations of pump and probe beams. The saturated absorption spectra were observed with a linewidth-narrowed semiconductor laser. As the result, it was found that the theoretical calculations were in good agreement with the experimental observations in the case where the geomagnetic field was- shielded.

• Korean Journal of Optics and Photonics
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• v.8 no.4
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• pp.255-259
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• 1997

In this paper, the result of a performance study on a home-built spinning disk type confocal microscope is presented. The confocal microscope was fabricated with a Nipkow disk made of the made of the microfilm. The throughput of the disk was 0.5%, allowing the observation of specimen with higher reflectivities only. A laser diode at 692.7nm was used as the light source. The topographic structures of a PC ROM and the CD ROM were observed with sufficient reliability, while the effect of the convolution of the beam size with the finite object size was found dominant. Also the shadowing effect by the etched pattern was observed.