• Korean Journal of Optics and Photonics
• /
• v.10 no.6
• /
• pp.507-511
• /
• 1999

A 10 GHz timing extracted signal which is phase-locked to a 10 Gbit/s mode-locked optical fiber laser pulse train is obtained using a tour-wave-mixing signal in semiconductor optical amplifier. The phase-locked loop wm, demonstrated ~Llccessful1y over 8 hours and found to have the lock-in frequency range of 30 KHz. 0 KHz.

• Proceedings of the Optical Society of Korea Conference
• /
• 2000.02a
• /
• pp.266-267
• /
• 2000

최근에 Stranski-Krastanov 방법을 이용한 나노미터 크기의 변형된 섬 구조 제작에 많은 관심을 보이고있다.$^{(1)}$ 이는 결함이 적고, 균일한 저차원의 반도체 구조가 광전자 장치에 지대한 발전을 가져올 것으로 기대되기 때문이다. 예를들어 양자 선이나 양자 점은 반도체 레이저의 이득 영역으로 좋은 특성을 가지는 것으로 알려졌다.$^{(2)}$ 이 논문에서 우리는 Chemical Beam Epitaxy (CBE)를 이용하여 InP 기판 위에 격자상수가 맞지 않는 InAs 층의 성장과 Photoluminescence (PL) 측정을 통해 이 구조의 특성에 대해서 알아보고자 한다. (중략)

• Journal of the Semiconductor & Display Technology
• /
• v.3 no.2
• /
• pp.35-40
• /
• 2004

The total relaxed stress in annealing and the thermal strain/stress were obtained from the identification of the residual stress-free state using electronic speckle pattern interferometry (ESPI). The residual stress fields in case of both single and film / substrate systems were modeled using the thermo-elastic theory and the relationship between relaxed stresses and displacements. We mapped the surface residual stress fields on the indented bulk Cu and the 0.5 $\mu\textrm{m}$ Au film by ESPI. In indented Cu, the normal and shear residual stress are distributed over -1.7 GPa to 700 MPa and -800 GPa to 600 MPa respectively around the indented point and in deposited Au film on Si wafer, the tensile residual stress is uniformly distributed on the Au film from 500 MPa to 800 MPa. Also we measured the residual stress by the x-ray diffractometer (XRD) for the verification of above residual stress results by ESPI...

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2006.05a
• /
• pp.251-254
• /
• 2006

In this paper, cutting qualifies and fracture strength of silicon dies by laser dicing are investigated. Laser micromachining is the non-contact process using thermal ablation and evaporation mechanisms. By these mechanisms, debris is generated and stick on the surface of wafer, which is the problem to apply laser dicing to semiconductor manufacture process. Unlike mechanical sawing using diamond blade, chipping on the surface and crack on the back side of wafer isn't made by laser dicing. Die strength by laser dicing is measured via the three-point bending test and is compared with the die strength by mechanical sawing. As a results, die strength by the laser dicing shows a decrease of 50% in compared with die strength by the mechanical sawing.

• Journal of the Semiconductor & Display Technology
• /
• v.11 no.1
• /
• pp.7-11
• /
• 2012

One dimensional and two dimensional nano patterns were fabricated on a 4-inch substrate by Laser Interference Lithography (LIL). Mach-Zehnder interferometer was setup to obtain the interference patterns and adjusted the pattern sizes with change of incident angle. We could obtain a periodic structure with a period of 440 nm using 266 nm laser, and demonstrated a pattern size with $293{\pm}25nm$ over a 4-inch substrate.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2005.05a
• /
• pp.219-223
• /
• 2005

Nowadays laser cutting is the most promising method of cutting FPD(Flat Panel Display) glass in mass-production line. And this method can also be used to cut other brittle materials such as quartz, sapphire, ceramic and semiconductor The concept of this method is shown in picture 1. Laser beam heats glass up to strain point, not to melting point and cooling system chills glass to induce maximun thermal stress in glass surface and then the thermal stress generates micro thermal crack, in other words blind depth of crack, along laser beam and cooling line.

• Journal of the Semiconductor & Display Technology
• /
• v.9 no.4
• /
• pp.31-37
• /
• 2010

In this paper, optical deflection of laser scattering has been investigated based on Rayleigh criterion for crystalline silicon wafer in solar cell. A laser scattering mechanism is newly designed using light scattering properties in silicon wafer. Intensity distributions of laser scattering are different, depending on the incident angle of laser computed from Rayleigh criterion. In case of the incident angle satisfied with the criterion, they are asymmetric. Also, their specular reflection angle is shifted to unpredicted ones. These phenomena are in accordance with previous theories of laser scattering. The optical deflection of laser scattering is experimentally identified with the designed laser scattering mechanism. Its mathematical model is presented from the geometric relationship of laser scattering. It is shown that the optical deflection of laser scattering agree with the presented model, exclusive of grazing angles which is satisfied with Rayleigh criterion.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2004.05a
• /
• pp.259-262
• /
• 2004

투명전극용 ZnO 박막을 펄스레이저 증착방법으로 형성한 후 산소압력과 기판온도에 따른 결정학적, 전기적 특성을 조사하였다. $200^{\circ}C$의 기판온도에서 증착한 ZnO 박막은 C축의 0002 방향으로 우선 배향한 결정구조를 보여주었다. 산소 압력이 10 mTorr 일때 반가폭(FWHM)은 $0.34^{\circ}$의 값을 나타내었다. ZnO 박막의 캐리어 농도는 약 $4\times$10^{20}$\textrm{cm}^3$ 으로 산소농도에는 크게 영향을 받지 않았으며, 약 $5\times10^{-4}{\Omega}cm$ 의 저항율을 나타내었다.

• Korean Journal of Optics and Photonics
• /
• v.11 no.3
• /
• pp.166-170
• /
• 2000

A wavelength tunable all-optical clock recovery using a semiconductor optical amplifier in a fiber ring cavity is proposed and demonstrated at the wavelength of 1530 nm to 1570 nm. A synchronized optical pulse train is recovered from 10 Gbps and 30 Gbps randomly generated optical pulse streams with injection locking technique. Also, the system responses to the perturbation and the input average power variation are analyzed by a large-signal model based on time-domain travelling wave equation. ation.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.65-65
• /
• 2010

pn 접합 소자는 반도체 소자의 매우 중요한 기본 구조이다. 최근 들어 나노선과 반도체 기판으로 구성된 pn 접합소자에 대한 연구가 활발히 진행되고 있으나, 나노선을 이용한 대부분의 접합소자는 나노선을 분산하여 소자를 제작하기 때문에 어레이 구조의 소자를 만들기에는 어려움이 있다. 본 연구에서는 성장된 나노선을 슬라이딩 전이하는 방법으로 정렬된 n-$SnO_2$ 나노선과 도핑이 된 p-Si 기판으로 이루어진 pn 접합 소자 어레이 구조를 제작하였다. 제작된 소자의 전류-전압 측정을 통해 정류 (rectification) 작용을 확인하였고 rectification ratio은 수천~수만으로 측정되었다. 소자에 UV (254nm) 빛을 조사하여 광전류의 증가를 확인할 수 있었다. 또한 소자에 15V이상의 전압을 걸어주면 접합 부분에서 EL(electroluminescence) 효과인 발광을 확인 할 수 있었다. 이처럼 나노선과 기판으로 구성된 pn 접합 소자는 다이오드, 태양전지 뿐 아니라 레이저와 LED등으로도 응용될 것으로 예상된다.