• Korean Journal of Materials Research
• /
• v.19 no.5
• /
• pp.281-287
• /
• 2009

ZnO thin film was grown on a sapphire single crystal substrate by plasma assisted molecular beam epitaxy. In addition to near band edge (NBE) emissions, both blue and green luminescences are also observed together. The PL intensity of the blue luminescence (BL) range from 2.7 to 2.9 eV increased as the amount of activated oxygen increased, but green luminescence (GL) was weakly observed at about 2.4 eV without much change in intensity. This result is quite unlike previous studies in which BL and GL were regarded as the transition between shallow donor levels such as oxygen vacancy and interstitial zinc. Based on the transition level and formation energy of the ZnO intrinsic defects predicted through the first principle calculation, which employs density functional approximation (DFA) revised by local density approximation (LDA) and the LDA+U approach, the green and blue luminescence are nearly coincident with the transition from the conduction band to zinc vacancies of $V^{2-}_{Zn}$ and $V^-_{Zn}$, respectively.

• Journal of the Korean Magnetics Society
• /
• v.25 no.1
• /
• pp.16-21
• /
• 2015

The micro device, coil, and channel for the biosensor integrated with the GMR-SV device based on the antiferromagnetic IrMn layer was fabricated by the light lithography process. When RBCs coupled with several magnetic beads with a diameter of $1{\mu}m$ passed on the micro channel, the movement of $RBC+{\mu}Beads$ is controlled by the electrical AC input signal. The $RBC+{\mu}Beads$ having a micro-magnetic field captured above the GMR-SV device is changed as the output signals for detection status. From these results, the GMR-SV device having the width magnitude of a few micron size can be applied as the biosensor for the analysis of a new magnetic property as the membrane's deformation of RBC coupled to magnetic beads.

• Journal of the Korean institute of surface engineering
• /
• v.47 no.2
• /
• pp.81-85
• /
• 2014

Ga doped ZnO (GZO)/Al bi-layered films were deposited on the glass substrate by RF and DC magnetron sputtering and then vacuum annealed at different temperatures of 100, 200 and $300^{\circ}C$ for 30 minutes to consider the effects of annealing temperature on the structural, electrical and optical properties of the films. For all depositions, the thicknesses of the GZO and Al films were kept constant at 95 and 5 nm, respectively, by controlling the deposition time. As-deposited GZO/Al bi-layered films showed a relatively low optical transmittance of 62%, while the films annealed at $300^{\circ}C$ showed a higher transmittance of 81%, compared to the other films. In addition, the electrical resistivity of the films was influenced by annealing temperature and the lowest resistivity of $9.8{\times}10^{-4}{\Omega}cm$ was observed in the films annealed at $300^{\circ}C$. Due to the increased carrier mobility, 2.35 $cm^2V^{-1}S^{-1}$ of the films. From the experimental results, it can be concluded that increasing the annealing temperature enhanced the optical and electrical properties of the GZO/Al films.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.45 no.12
• /
• pp.139-145
• /
• 2008

In this paper, a microstrip surface wave antenna(SWA) with a frequency selective surface structure(FSS) is designed and measured. A microstrip SWA has many advantages such as low profile, low weight, easy fabrication, and compatibility with monolithic microwave integrated circuits(MMIC). In addition, it has demonstrated monopole like beam patterns. The microstrip SWA consists of two parts : a center-fed modified microstrip patch to excite surface wave, and a periodic patches to support the propagation of the surface waves. To obtain wide bandwidth, the ring type parasitic element is inserted and the circular patch is selected for the unit element in FSS structure. Experimental results show that the microstrip SWA has monopole like beam patterns at 5.9GHz. Impedance bandwidth and gain is 12% and 5.6dBi.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.60 no.2
• /
• pp.352-356
• /
• 2011

Transparent conducting oxide films like ITO/Au/ITO and AZO/Au/AZO were fabricated with a sputter at a low-temperature of less then $70^{\circ}C$ and their crystallization and opto-electrical properties were studied. X-ray diffractiometry showed that single-ITO layer was amorphous, whereas, ITO of ITO/Au/ITO multi-layer was crystal. The ITO crystallization and its orientation depended on Au crystallization. Surface roughness of the ITO-multi-layers were in the range of 29-88% of that of ITO-single layer. ITO on amorphous gold layer had more rough surface than ITO on crystal gold. The gold layer between ITO improved electrical conductivity. Carrier density, mobility, resistivity and sheet resistance of ITO-single layer were $2.3{\times}10^{19}/cm^3$, $85{\times}cm^2$/Vs, $31{\times}10^{-4}{\Omega}cm$, and $310{\times}{\Omega}/cm^2$, respectively. Those of ITO/Au/ITO-multi-layers depended on Au-interlayer-thickness, which were in the range of $3.6{\times}10^{19}{\sim}4.2{\times}10^{21}/cm^3$, $43{\sim}85cm^2$/Vs, $0.17{\times}10^{-4}{\sim}25{\times}10^{-4}{\Omega}cm$, and $1.7{\sim}20{\times}{\Omega}/cm^2$, respectively. The sheet resistances of the single-layer ITO and the multi-layer ITO were 310 and $2.7{\sim}21{\Omega}/cm^2$, respectively. That of AZO/Au/AZO was $8.6{\Omega}/cm^2$, which was better than the single-layer ITO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.05a
• /
• pp.84-87
• /
• 2005

본 논문에서는 p-type 고분자 물질인 P3HT (Poly-3-hexylthiophene)를 잉크젯 프린팅 방식으로 활성화층을 적층함으로써 Organic thin film transistor를 제작하여 이에 대한 특성을 연구하였다. Piezoelectric 방식의 잉크젯 프린팅을 이용하여 P3HT single drop jetting 시 두께 $150{\sim}200{\AA}$, 직경 약 70 ~ 80 um정도의 drop profile을 얻을 수 있었다. P3HT의 solvent로서 Chlorobenzene을 사용하여 농도 약 0.5 wt.%의 Ink-jet용 ink를 제작하여 이를 Channel Width 37, 236 um 크기의 Au 전극 위에 jetting 하여 각각의 특성을 측정하였다. 상기 실험은 상온의 외부환경에서 실시되었으며 실험 결과 최대 ${\mu}=1{\times}10^{-2}\;cm^2/Vsec$, $I_{on}/I_{off}=10^3{\sim}10^4$ 정도로서 off current가 높은 편이나 이동도 측면에서는 다른 방법의 박막 증착 실험결과와 비교할 때 동등 수준의 결과를 얻을 수 있었다.

• Journal of the Korean Society for Heat Treatment
• /
• v.30 no.1
• /
• pp.13-16
• /
• 2017

$SnO_2$ single layer films and 2 nm thick Ni thin film intermediated $AZO/Ni/SnO_2$ trilayer films were deposited on glass substrate at room temperatures by RF and DC magnetron sputtering and then the optical and electrical properties of the films were investigated to enhance opto-electrical performance of $SnO_2$ single layer films. As deposited $SnO_2$ films show the optical transmittance of 81.8% in the visible wavelength region and a resistivity of $1.2{\times}10^{-2}{\Omega}cm$, while $AZO/Ni/SnO_2$ films show a lower resistivity of $5.8{\times}10^{-3}{\Omega}cm$ and an optical transmittance of 77.1% in this study. Since $AZO/Ni/SnO_2$ films show the higher figure of merit than that of the $SnO_2$ single layer films, it is supposed that the $AZO/Ni/SnO_2$ films can assure high opto-electrical performance for use as a transparent conducting oxide in various display applications.

• Journal of Adhesion and Interface
• /
• v.20 no.3
• /
• pp.110-115
• /
• 2019

Graphene oxide has been gathering interests as a way to exfoliate graphene. Since the oxidation group of graphene oxide can hydrogen bond with various functional groups, tremendous efforts have been actively conducted to apply various applications. However, graphene oxide alone cannot substantially possess the mechanical properties required for the practical application. Therefore, in this study, polydopamine, which is a bio-mimetic mussel protein-inspired material, was combined with graphene oxide to form a large-area composite membrane at the liquid-gas interface. In addition, the morphology of the polydopamine-graphene oxide composite thin film was also controlled to obtain a composite membrane having a nano-wrinkle structure. It can be expected to be used in the next generation seawater desalination membranes or carbon composites because it can form mechanically superior and sophisticated nanostructures.

• The Journal of the Convergence on Culture Technology
• /
• v.8 no.2
• /
• pp.337-342
• /
• 2022

Although printing technology has recently been widely used in IT fields including displays and fuel cells, residual and thermal stress are generated by a manufacturing process of stacking the layers of the print head and result in the substrate deformation and nozzle plate crack, which may cause ink leaks or not be ejected onto a desired region. Therefore, in this paper, we propose a new design of thermal inkjet print head with a robust and reliable structure. Diverse types of inkjet print head such as a rib, pillar, support wall and individual feed hole are designed to reduce the deformation of the substrate and nozzle plate, and their feasibility is numerically investigated through FEA analysis. The numerical results show that the maximum stress and deformation of proposed print head dramatically drops to at least 40~50%, and it is confirmed that there is no nozzle plate cracks and ink leakage through the fabrication of pillar and support wall typed print head. Therefore, it is expected that the proposed head shape can be applied not only to ink ejection in the normal direction, but also to large-area printing technology.

• Journal of the Microelectronics and Packaging Society
• /
• v.28 no.1
• /
• pp.39-46
• /
• 2021

The quantitative measurement of interfacial adhesion energy (Gc) of multilayer thin films for Cu interconnects was investigated using a double cantilever beam (DCB) and 4-point bending (4-PB) test. In the case of a sample with Ta diffusion barrier applied, all Gc values measured by the DCB and 4-PB tests were higher than 5 J/㎡, which is the minimum criterion for Cu/low-k integration without delamination. However, in the case of the Ta/Cu sample, measured Gc value of the DCB test was lower than 5 J/㎡. All Gc values measured by the 4-PB test were higher than those of the DCB test. Measured Gc values increase with increasing phase angle, that is, 4-PB test higher than DCB test due to increasing plastic energy dissipation and roughness-related shielding effects, which matches well interfacial fracture mechanics theory. As a result of the 4-PB test, Ta/Cu and Cu/Ta interfaces measured Gc values were higher than 5 J/㎡, suggesting that Ta is considered to be applicable as a diffusion barrier and a capping layer for Cu interconnects. The 4-PB test method is recommended for quantitative adhesion energy measurement of the Cu interconnect interface because the thermal stress due to the difference in coefficient of thermal expansion and the delamination due to chemical mechanical polishing have a large effect of the mixing mode including shear stress.