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http://dx.doi.org/10.5370/KIEE.2011.60.2.352

Study on the Crystal Growth Behavior and Opto-Electrical Properties of Transparent Conducting Oxide Films with Au-Interlayer Fabricated by Using a Low-temperature Process  

Ji, Young-Seok (선문대 공대 금속재료공학과)
Choi, Yong (선문대 공대 전자재료공학과)
Lee, Sang-Heon (선문대 공대 전자공학과)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.60, no.2, 2011 , pp. 352-356 More about this Journal
Abstract
Transparent conducting oxide films like ITO/Au/ITO and AZO/Au/AZO were fabricated with a sputter at a low-temperature of less then $70^{\circ}C$ and their crystallization and opto-electrical properties were studied. X-ray diffractiometry showed that single-ITO layer was amorphous, whereas, ITO of ITO/Au/ITO multi-layer was crystal. The ITO crystallization and its orientation depended on Au crystallization. Surface roughness of the ITO-multi-layers were in the range of 29-88% of that of ITO-single layer. ITO on amorphous gold layer had more rough surface than ITO on crystal gold. The gold layer between ITO improved electrical conductivity. Carrier density, mobility, resistivity and sheet resistance of ITO-single layer were $2.3{\times}10^{19}/cm^3$, $85{\times}cm^2$/Vs, $31{\times}10^{-4}{\Omega}cm$, and $310{\times}{\Omega}/cm^2$, respectively. Those of ITO/Au/ITO-multi-layers depended on Au-interlayer-thickness, which were in the range of $3.6{\times}10^{19}{\sim}4.2{\times}10^{21}/cm^3$, $43{\sim}85cm^2$/Vs, $0.17{\times}10^{-4}{\sim}25{\times}10^{-4}{\Omega}cm$, and $1.7{\sim}20{\times}{\Omega}/cm^2$, respectively. The sheet resistances of the single-layer ITO and the multi-layer ITO were 310 and $2.7{\sim}21{\Omega}/cm^2$, respectively. That of AZO/Au/AZO was $8.6{\Omega}/cm^2$, which was better than the single-layer ITO.
Keywords
Transparent conducting oxide films; ITO/Au/ITO; AZO/Au/AZO; Sheet resistance;
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