• Journal of the Microelectronics and Packaging Society
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• v.17 no.1
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• pp.55-61
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• 2010

An impact bending test method was used to evaluate the reliability for the solder joint of lead-free solder ball. In order to standardize the test method, the four point impact bending test was applied under the conditions of various frequencies and amounts of +/-amplitude respectively. Effects on the results were analysed. The optimum condition for impact bending test achieved in this study was the frequency of 10 Hz, and the amplitude of (+12/-1)~(+15/-1). 3 kinds of surface finishes Cu-OSP (Organic Solderability Preservative), ENIG (Electroless Nickel Immersion Gold), and ENEPIG (Electroless Nickel, Electroless Palladium, Immersion Gold) were used. Fracture surface showed that cracks were initiated and fractured along the intermetallic layer in the case of surface finishes of Cu-OSP and ENIG, while in the case of ENEPIG the cracks were initiated and propagated in the solder region.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.35-40
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• 2010

In this study, the reliability of thermal shock, thermal cycle, and complex vibration test at high temperature were examined for 3 types of lead-free solder alloys, Sn-3.5Ag, Sn-0.7Cu and Sn-5.0Sb. For the reliability test, daisychained BGA chips with ENIG-finished Cu pad was assembled with the three lead-free solders on OSP-finished PCBs. Among the 3 types solder alloys, Sn-3.5Ag solder alloy showed the highest degradation rate of electrical resistance and joint strength. On the other hand, Sn-0.7Cu solder alloy had high stability after the reliability tests.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.27-36
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• 2007

In this study, we investigated the interfacial reactions between various Sn-Ag-Cu(SAC) solder alloys and ENIG(Electroless Ni Immersion Gold) and Cu-OSP(Organic Solderability Preservative) pad finish. In the case of the interfacial reaction between Sb added SAC solder and ENlf thinner P-rich Ni layer was formed at the interface. In the case of the interfacial reaction between Ni added SAC solder and Cu-OSP, the uniform $Cu_6Sn_5$, intermetallic compounds(IMCs) were formed and $Cu_6Sn_5$ grain did not grow after multiple reflows. Thinner $Cu_3Sn$ IMCs were farmed at the interface between $Cu_6Sn_5$ and Cu-OSP after $150^{\circ}C$ thermal aging.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.1
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• pp.1-7
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• 2010

Interfacial reaction characteristics of a Bi-10Cu-20Sb-0.3Ni Pb-free alloy on Cu pad was investigated by reflow soldering at $430^{\circ}C$. The thickness of interfacial reaction layers with respect to the soldering time was also measured. After the reflow soldering, it was observed that a $(Cu,Ni)_2Sb$, a $Cu_4Sb$ intermetallic layer, and a haze layer, which is consisted of Bi and $Cu_4Sb$ phases, were successively formed at the Bi-10Cu-20Sb-0.3Ni/Cu interface. The total thickness of the reaction layers was found to be linearly increased with increasing of the reflow soldering time up to 120 s. As the added Ni element did not participate in the formation of the thickest $Cu_4Sb$ interfacial layer, suppression of the interfacial growth was not observed.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.1
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• pp.45-50
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• 2017

We investigated effect of Zn content on shear strengh of Sn-0.7Cu-xZn and OSP surface finished solder joints. Five pastes of Sn-0.7Cu-xZn (x=0, 0.5, 1.0, 1.5, 2.0 wt.%) solders were fabricated by mixing of solder powder and flux using planatary mixer. $180{\mu}m$ diameter solder balls were formed on OSP surface finished Cu electrodes by screen print method, and the reflow process was performed. The shear strength was evaluated with two high shear speeds; 0.01 and 0.1 m/s. The thickness of the intermetallic compound(IMC) layer was decreased with increasing Zn content in Sn-0.7Cu-xZn solder. The highest shear strength was 3.47 N at the Zn content of 0.5 wt.%. As a whole, the shear strength at condition of 0.1 m/s was higher than that of 0.01 m/s because of impact stress. Fracture energies were calculated by F-x (Force-displacement) curve during high speed shear test and the tendency of fracture energy and that of shear strength were good agreement each other. Fracture took place within solder matrix at lower Zn content, and fracture occured near the interface of OSP surface finished Cu electrode and solder at higher Zn content.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.123-123
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• 2012

최근 연구되고 있는 TSV(Through Silicon Via) 기술은 Si 웨이퍼 상에 직접 전기적 연결 통로인 관통홀을 형성하는 방법으로 칩간 연결거리를 최소화 할 수 있으며, 부피의 감소, 연결부 단축에 따른 빠른 신호 전달을 가능하게 한다. 이러한 TSV 기술은 최근의 초경량화와 고집적화로 대표되는 전자제품의 요구를 만족시킬 수 있는 차세대 실장법으로 기대를 모으고 있다. 한편, 납땜 재료의 주 원료인 주석은 주로 반도체 소자의 제조, 반도체 칩과 기판의 접합 및 플립 칩 (Flip Chip) 제조시의 범프 형성 등 반도체용 배선재료에 널리 사용되고 있다. 최근에는 납의 유해성 때문에 대부분의 전자제품은 무연솔더를 이용하여 제조되고 있지만, 주석을 이용한 반도체 소자가 고밀도화, 고 용량화 및 미세피치(Fine Pitch)화 되고 있기 때문에, 반도체 칩의 근방에 배치된 주석으로부터 많은 알파 방사선이 방출되어 메모리 셀의 정보를 유실시키는 소프트 에러 (Soft Error)가 발생되는 위험이 많아지고 있다. 이로 인해, 반도체 소자 및 납땜 재료의 주 원료인 주석의 고순도화가 요구되고 있으며, 특히 알파 방사선의 방출이 낮은 로우알파솔더 (Low Alpha Solder)가 요구되고 있다. 이에 따라 본 연구는 4인치 실리콘 웨이퍼상에 직경 $60{\mu}m$, 깊이 $120{\mu}m$의 비아홀을 형성하고, 비아 홀 내에 기능 박막증착 및 전해도금을 이용하여 전도성 물질인 Cu를 충전한 후 직경 $80{\mu}m$의 로우알파 Sn-1.0Ag-0.5Cu 솔더를 접합 한 후, 접합부 신뢰성 평가를 수행을 위해 고속 전단시험을 실시하였다. 비아 홀 내 미세구조와 범프의 형상 및 전단시험 후 파괴모드의 분석은 FE-SEM (Field Emission Scanning Electron Microscope)을 이용하여 관찰하였다. 연구 결과 비아의 입구 막힘이나 보이드(Void)와 같은 결함 없이 Cu를 충전하였으며, 고속전단의 경우는 전단 속도가 증가할수록 취성파괴가 증가하는 경향을 보였다. 본 연구를 통하여 전해도금을 이용한 비아 홀 내 Cu의 고속 충전 및 로우알파 솔더 볼의 범프 형성이 가능하였으며, 이로 인한 전자제품의 소프트에러의 감소가 기대된다.

• Journal of Welding and Joining
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• v.20 no.2
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• pp.77-81
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• 2002

Many kinds of Pb-free solder have been investigated because of the environmental concerns. Sn-Ag-Cu system is well blown as most competitive Pb-free solder. However, since Sn-Ag-Cu system has relatively high melting point compared to Sn-Pb eutectic, it may a limitation, the some application. In this study, Bi and In contained solder of $Sn_3Ag_8Bi_5In$ which has relatively lower melting point, $188~204^{\circ}C$, was investigated. $Sn_3Ag_8Bi_5In$ solder ball of $500\mu\textrm{m}$ diameter was set on the Ni/Cu/Cr-UBM and reflow soldered in the range of $220~240^{\circ}C$ for 5~15s. The maximum shear strength of the solder ball was around 170mN by reflowing at $240^{\circ}C$ for 10s. Intermetallic compound formed on the UBM of Si-wafer was analysed by SEM(scanning electron microscope) and XRD(X-ray diffractometer).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.549-554
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• 2003

The purpose of this paper is to investigate the solder properties by the change of P mass percentage. Tension test, wetting balance test, spread test, and analysis of intermetallic compound after isothermal aging of Sn-2.5Ag-0.7Cu-0.005P, Sn-2.5Ag-0.7Cu-0.01P, Sn-2.5Ag-0.7Cu-0.02P, Sn-0.7Cu-0.005P were performed. Adding P in the solder alloys resulted in improvement of tensile strength, reduction of intermetallic compound growth, reduction of oxidization in fusible solders under wave soldering. After comparing solder alloy containing P with tin-lead eutectic solder alloy, P contained solders alloys showed much better solder properties than eutectic solder alloy. Furthermore, this solder alloy presented remarkable properties than any other lead-free solder alloy.

• Proceedings of the KWS Conference
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• 2007.11a
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• pp.218-221
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• 2007

The surface mounting technology of 0402 electric chip part is necessary to fabricate a high density and multi-functional module, but there is a limitation of the technology, like as a bridge and self-alignement. This work estimated SMT processing factors of 0402 chip. To obtain optimum SMT process, we evaluated effects of stencil thickness, shape of hole on printability and mountability. Printability shows best results under the thickness of $80{mu}m$ with circle hole shape and 90% square hole shape. In case of chip mounting process, chip mis-alignment and bridge was occurred rarely in same conditions. In more thin stencil thickness, $50{mu}m$, strength of 1005 chip parts was poor, because of amount of printed solder was insufficient.

• Journal of the Korean Society of Industry Convergence
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• v.12 no.4
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• pp.215-219
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• 2009

A packaging technology based on flip-chip bonding and Pb-free solder for silicon pressure sensors on printed circuit board (PCB) is presented. First, the bump formation process was conducted by Pb-free solder. Ag-Sn-Cu solder and the pressed-screen printing method were used to fabricate solder bumps. The fabricated solder bumps had $189-223{\mu}m$ width, $120-160{\mu}m$ thickness, and 5.4-6.9 standard deviation. Also, shear tests was conducted to measure the bump shear strength by a Dage 2400 PC shear tester; the average shear strength was 74 g at 0.125 mm/s of test speed and $5{\mu}m$ shear height. Then, silicon pressure sensor packaging was implemented using the Pb-free solder and bump formation process. The characteristics of the pressure sensor were analogous to the results obtained when the pressure sensor dice are assembled and packaged using the standard wire-bonding technique.