• Journal of the Korean Society of Propulsion Engineers
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• v.20 no.1
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• pp.1-7
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• 2016

Most of the work has been done till now focused on flows over wall mounted cavities in a straight wall where the incoming flow is uniform. However, the investigation on such kind of flow over a cavity mounted on the curved walls has been seldom reported in the existing literatures. In the present study, the numerical analysis was performed to investigate the cavity flow mounted on the curved walls. The effects of wall shape, the curvature radius and the flow Mach number, were investigated for high-subsonic flows. The results show that the static pressure of cavity floor increases as the L/R increases. This effect is found to be more significant when the flow Mach number is higher. The cavity drag for the curved walls are higher as compared with that of straight wall.

• Polymer(Korea)
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• v.28 no.2
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• pp.185-193
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• 2004

Elastomeric nanocomposites were prepared by employing zinc dimethacrylate into an acrylonitrile-butadiene rubber, and their network structures, mechanical properties, and fracture morphologies were investigated according to the adding methods and contents of zinc dimethacrylate. The total crosslink density increased with increasing the zinc dimethacrylate level, due to increased ionic bonds. Both the tensile strength and tear strength increased with increasing zinc dimethacrylate loadings, and then decreased after reaching a maximum value. It was found that the tear strength and crack resistance were greatly affected by the mixing method of zinc dimethacrylate. The in-situ nanocomposites, where zinc dimethacrylate particles were formed by the reaction of zinc oxide and methacrylic acid, showed much improved tear strength and crack resistance compared to those of the nanocomposites based on the direct mixing of zinc dimetacrylate powders. This was because of the finer zinc dimethacrylate particles and improved dispersion of the in-situ nanocomposites.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.186-186
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• 2013

종래의 흑연 위주 연료전지 분리판 개발되어 최근 고분자 전해질 막 연료전지가 높은 전력, 낮은 배기 가스 배출, 낮은 작동 온도로 자동차 산업에서 상당한 주목을 받고 있다. 요구사항은 높은 전기 전도도, 높은 내식성, 낮은 가스 투과성, 낮은 무게, 쉬운 가공, 낮은 제조비용이다. Thin film Cr 장비로 저항가열 furnace, sputter 등이 사용된다. 연료전지 분리판의 고전도도, 내부식성 보호막의 고속 증착을 위한 새로운 증착원으로 스퍼터 - 승화형 소스의 가능성을 유도 결합 플라즈마에 금속 봉을 직류 바이어스 함으로써 시도하였다. 유도 결합 플라즈마를 이용하여 승화증착 시스템을 사용하여 OES (SQ-2000)와 QMS (CPM-300)를 사용하여 $N_2$ flow에 따른 유도 결합 플라즈마를 이용한 스퍼터-승화증착 시스템을 사용 하여도 균일한 공정을 하는 것을 확인 하였다. 5 mTorr의 Ar 유도 결합 플라즈마를 2.4 MHz, 500 W로 유지하면서 직류 바이어스 전력을 30 W (900 V, 0.02 A) 인가하고, $N_2$의 유량을 0.5, 1.0, 1.5 SCCM로 변화를 주어 특성을 분석하였다. MID (Multiple Ion Detection) mode에서 유도결합 플라즈마를 이용한 스퍼터-승화 증착 장비를 사용하여 CrN thin flim 성장시켰고, deposition rate은 44.8 nm/min으로 얻을 수 있었다. 또한 $N_2$의 유량이 증가할 수록 bias voltage가 증가하는 것을 확인 할 수 있었다. OES time acquisition을 이용한 공정 분석에서는 $N_2$ 유량을 off 하였을 때 Ar, Cr의 중성 intensity peak이 상승하였고, 시간 경과에 따라 sublimation에 의한 영향이 없는 것을 확인 할 수가 있었다. XRD data에서는 질소 유량이 증가함에 따라 $Cr_2N$이 감소하고, CrN이 증가하는 것을 확인할 수가 있었다. 결정배향성과 Morphology는 다결정 재료의 경도에 영향을 주는 인자이다. CrN 결정 구조의 경우는 (200)면이 경도가 제일 높은데 (200)면에서 성장한 것을 확인 할 수 있었다. 잔류가스 분석 결과로는 일정한 Ar의 유량을 흘렸을 때 $N_2$의 변화량이 비례적인 경향이 보이는 것을 확인 할수 있었다. 또한 $N_2$가 흐르면서도 유도 결합 플라즈마를 이용한 스퍼터-승화 증착 시스템을 사용하면 일정한 공정을 하는 것을 확인 할 수 있었다. 질소의 분압이 유량에 따라서 $3.0{\times}10^{-10}$ Torr에서 $1.65{\times}10^{-9} $Torr까지 일정한 비율로 증가한다. 즉, 이 시스템으로 양산장비 설계를 하여도 가능 하다는 것을 말해준다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.351-352
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• 2011

그래핀(Graphene)은 2차원 평면구조의 $sp^2$ 탄소 결합으로 이루어진 물질이다. 일반적으로 그래핀은 탄소 원자 한층 정도의 얇은 두께를 가지면서 강철의 100배 이상 높은 강도, 다이아몬드보다 2배 이상 뛰어난 열 전도성, 그리고 규소보다 100배 이상 빠른 전자이동도 등의 매우 우수한 특성을 지닌다. 그래핀을 합성하거나 얻는 방법에는, 기계적 박리법(Micro mechanical exfoliation), 산화흑연(graphite oxide)을 이용한 reduced graphene oxide(RGO)방법과 탄화 규소(SiC)를 이용한 epitaxial growth 방법 등이 있지만, 대 면적화가 어렵거나 구조적 결함이 큰 문제점이 있다. 반면, 탄화수소(hydrocarbon)를 탄소 공급원으로 하는 열화학 기상 증착법(Thermal chemical vapor deposition, TCVD)은 구조적 결함이 상대적으로 적으면서 대 면적화가 가능하다는 이점 때문에 최근 가장 많이 이용되고 있는 방법이다. TCVD를 이용, 니켈, 몰리브덴, 금, 코발트 등의 금속에서 그래핀 합성연구가 보고되었지만, 대부분 수 층(fewlayer)의 그래핀이 합성되었다. 하지만, 구리 촉매를 이용하는 것이 단층 그래핀 합성에 매우 효율적이라는 연구결과가 보고되었다. 구리의 경우, 낮은 탄소융해도(solubility of carbon) 때문에 표면에서 self limiting 과정을 통하여 단층 그래핀이 합성된다. 그러나 단층 그래핀 일지라도 면저항(sheet resistance)이 매우 높고, 이론적 계산값에 비해 전자이동도(electron mobility)가 낮게 측정된다. 이러한 원인은 구조적 결함에서 기인된 것으로써 산업으로의 응용을 어렵게 만들기 때문에 양질의 단층 그래핀 합성연구는 필수적이다[1,2]. 본 연구에서는 TCVD를 이용하여 구리 포일(25 ${\mu}m$, Alfa Aeser) 위에 메탄가스를 탄소공급원으로 하여 수소를 함께 주입하고, 메탄가스의 양과 합성시간, 열처리 시간을 조절하면서 균일한 단층 그래핀을 합성하였다. 합성된 그래핀을 $SiO_2$ (300 nm)기판위에 전사(transfer)후 라만 분광법(raman spectroscopy)과 광학 현미경(optical microscope)을 통하여 분석하였다. 그 결과, 열처리 시간이 증가할수록 촉매로 사용된 구리 포일의 grain size가 커짐을 확인하였으며, 구리 포일 위에 합성된 그래핀의 grain size는, 구리 포일의 grain size에 의존하여 커짐을 확인하였다. 또한 동일한 grain 내의 그래핀은 균일한 층으로 합성되었다. 이는 기계적 박리법, RGO 방법, epitaxial growth 방법으로 얻은 그래핀과 비교하여 매우 뛰어난 결정성을 지님이 확인되었다. 본 연구를 통하여 면적이 넓으면서도 결정성이 매우 뛰어난 양질의 단층 그래핀 합성 방법을 확립하였다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.2
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• pp.195-200
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• 2007

We fabricated thermally-evaporated 10 nm-Ni/70 w-Poly-Si/200 $nm-SiO_2/Si$ and $10nm-Ni_{0.5}Co_{0.5}/70$ nm-Poly-Si/200 $nm-SiO_2/Si$ structures to investigate the microstructure of nickel monosilicide at the elevated temperatures required fur annealing. Silicides underwent rapid anneal at the temperatures of $600{\sim}1100^{\circ}C$ for 40 seconds. Silicides suitable for the salicide process formed on top of the polycrystalline silicon substrate mimicking the gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope and an Auger depth profile scope were employed for the determination of cross sectional microstructure and thickness. 20nm thick nickel cobalt composite silicides on polycrystalline silicon showed low resistance up to $900^{\circ}C$, while the conventional nickle silicide showed low resistance below $900^{\circ}C$. Through TEM analysis, we confirmed that the 70nm-thick nickel cobalt composite silicide showed a unique silicon-silicide mixing at the high silicidation temperature of $1000^{\circ}C$. We identified $Ni_3Si_2,\;CoSi_2$ phase at $700^{\circ}C$ using an X-ray diffractometer. Auger depth profile analysis also supports the presence of this mixed microstructure. Our result implies that our newly proposed NiCo composite silicide from NiCo alloy films process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.36 no.3
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• pp.463-470
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• 2016

A vane shear test (VST) is a simple testing method for determining an undrained shear strength of cohesive soils by minimizing soil disturbance. In this study, the VST was used to determine a shear strength of sand. Dry Nakdong River sand was prepared for loose and dense conditions in a cell and then pressurized with 25, 50, 75 or 100 kPa from the surface of sand. A vane (5 cm in diameter and 10 cm in height) was rotated and a torque was measured within sand. When a torque moment by vane and friction resistance moment by sand is assumed to be equalized, a friction angle can be obtained. When a vane rotates within clay, a uniform undrained shear strength is assumed to be acting on cylindrical failure surface. On the other hand, when it is applied for sand, the failure shape can be assumed to be an octagonal or square column. The relationship between measured torque and resistant force along assumed failure shapes due to friction of sand was derived and the internal friction angle of sand was determined for loose and dense conditions. For the same soil condition, a series of direct shear test was carried out and compared with VST result. The friction angle from VST was between 24-42 degrees for loose sand and 33-53 degrees for dense sand. This is similar to those of direct shear tests.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.528-537
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• 2008

60 nm and 20 nm thick hydrogenated amorphous silicon(a-Si:H) layers were deposited on 200 nm $SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by an e-beam evaporator. Finally, 30 nm-Ni/(60 nm and 20 nm) a-Si:H/200 nm-$SiO_2$/single-Si structures were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 40 sec. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy(FE-SEM), transmission electron microscopy(TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide from the 60 nm a-Si:H substrate showed low sheet resistance from $400^{\circ}C$ which is compatible for low temperature processing. The nickel silicide from 20 nm a-Si:H substrate showed low resistance from $300^{\circ}C$. Through HRXRD analysis, the phase transformation occurred with silicidation temperature without a-Si:H layer thickness dependence. With the result of FE-SEM and TEM, the nickel silicides from 60 nm a-Si:H substrate showed the microstructure of 60 nm-thick silicide layers with the residual silicon regime, while the ones from 20 nm a-Si:H formed 20 nm-thick uniform silicide layers. In case of SPM, the RMS value of nickel silicide layers increased as the silicidation temperature increased. Especially, the nickel silicide from 20 nm a-Si:H substrate showed the lowest RMS value of 0.75 at $300^{\circ}C$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.1
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• pp.16-22
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• 2008

We fabricated thermally-evaporated 10 nm-Ni/30 nm and 70 nm Poly-Si/200 nm-$SiO_2/Si$ structures to investigate the thermal stability of nickel silicides formed by rapid thermal annealing(RTA) of the temperature of $300{\sim}1100^{\circ}C$ for 40 seconds. We employed for a four-point tester, field emission scanning electron microscope(FE-SEM), transmission electron microscope(TEM), high resolution X-ray diffraction(HRIXRD), and scanning probe microscope(SPM) in order to examine the sheet resistance, in-plane microstructure, cross-sectional microstructure evolution, phase transformation, and surface roughness, respectively. The silicide on 30 nm polysilicon substrate was stable at temperature up to $900^{\circ}C$, while the one on 70 nm substrate showed the conventional $NiSi_2$ transformation temperature of $700^{\circ}C$. The HRXRD result also supported the existence of NiSi-phase up to $900^{\circ}C$ for the Ni silicide on the 30 nm polysilicon substrate. FE-SEM and TEM confirmed that 40 nm thick uniform silicide layer and island-like agglomerated silicide phase of $1{\mu}m$ pitch without residual polysilicon were formed on 30 nm polysilicon substrate at $700^{\circ}C\;and\;1000^{\circ}C$, respectively. All silicides were nonuniform and formed on top of the residual polysilicon for 70 nm polysilicon substrates. Through SPM analysis, we confirmed the surface roughness was below 17 nm, which implied the advantage on FUSI gate of CMOS process. Our results imply that we may tune the thermal stability of nickel monosilicide by reducing the height of polysilicon gate.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.2
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• pp.303-310
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• 2008

We fabricated hydrogenated amorphous silicon(a-Si:H) 140 nm thick film on a $180\;nm-SiO_2/Si$ substrate with an inductively-coupled plasma chemical vapor deposition(ICP-CVD) equipment at $250^{\circ}C$. Moreover, 30 nm-Ni film was deposited with a thermal-evaporator sequently. Then the film stack was annealed to induce silicides by a rapid thermal annealer(RTA) at $200{\sim}500^{\circ}C$ in every $50^{\circ}C$ for 30 minuets. We employed a four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscope(FE-SEM), transmission electron microscope(TEM), and scanning probe microscope(SPM) in order to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure evolution, and surface roughness, respectively. We confirmed that nano-thick high resistive $Ni_3Si$, mid-resistive $Ni_2Si$, and low resistive NiSi phases were stable at the temperature of <300, $350{\sim}450^{\circ}C$, and >$450^{\circ}C$, respectively. Through SPM analysis, we confirmed the surface roughness of nickel silicide was below 12 nm, which implied that it was superior over employing the glass and polymer substrates.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.25-37
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• 2020

In this study, hybridization of graphene oxide and metal was carried out by the functional groups containing oxygen and thermal treatment for reduction in order to enhance the electrical conductivity and magnetic properties of graphene materials. Graphene-metal hybrid materials were synthesized using the oxygen-containing functional groups (-OH, -COOH and so on) on the surface of graphene oxide by replacing them with metal ions via ion exchange method as well as thermal reduction. The metals used in this study were Fe, Ag, Ni, Zn, and Fe/Ag, and it was confirmed that metal particles of uniform size were well dispersed on the graphene surface through SEM, TEM, and EDS. All of the metal particles on the graphene surface had an oxide-crystalline structure. To check the electrical properties, sheet resistance of the rGO-metal hybrid sample was measured on the PET film made by the dip-coating, and the specific resistance was calculated by measuring the thickness of the specimen through SEM. As a result, the specific resistance was in the range of 2.14×10-5 and 3.5×10-3 ohm/cm.