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A Study on the Co-firing Compatibility with Ag-thick film and Dielectric Characteristics of Low Temperature Sinterable SiO$_2$-TiO$_2$-Bi$_2$O$_3$-RO system (RO :BaO-CaO-SrO) Glass/Ceramic Dielectric Material with the Addition of B$_2$O$_3$ (저온 소성용 SiO$_2$-TiO$_2$-Bi$_2$O$_3$-RO계(RO :BaO-CaO-SrO) Glass/ceramic 유전체 재료의 B$_2$O$_3$첨가에 따른 Ag 후막과의 동시 소결시 정합성 밀 유전 특성에 관한 연구)

  • 윤장석;이인규;유찬세;이우성;강남기
    • Journal of the Microelectronics and Packaging Society
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    • v.6 no.3
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    • pp.37-43
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    • 1999
  • Co-firing incompatibility between the low temperature sinterable Glass/ceramic and Ag-thick film was studied. The dielectric material, which has been developed for microwave frequency applications, consists of $SiO_2-TiO_2-Bi_2O_3$-$Bi_2O_3$-RO system(RO:BaO -CaO-SrO) crystallizable glass and $Al_2O_3$as a ceramic filler. The large camber in the sintered specimen and cracks at the Ag-film under the influence of the camber occurred due to the difference of densification rate between the ceramic sheet and the Ag-film $B_2O_3$addition to the Glass/ceramic mixture reduced the severe camber. The cambers decreased with increasing the $B_2O_3$ content, and completely disappeared with 14 vol% $B_2O_3$addition. With additions of $B_2O_3$, $\varepsilon_{r}$ decreased abruptly, Q$\times$f value increased largely and the $\tau_f$ value of the material quickly shifted to positive one.

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Thermoelectric Characteristics of the Electroplated Bi-Te Films and Photoresist Process for Fabrication of Micro Thermoelectric Devices (전기도금 공정으로 제조한 Bi-Te 박막의 열전특성 및 미세열전소자 형성용 포토레지스트 공정)

  • Lee, Kwang-Yong;Oh, Tae-Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.14 no.2 s.43
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    • pp.9-15
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    • 2007
  • Thermoelectric properties of the electrodeposited Bi-Te films and photoresist process have been investigated to apply for thermoelectric thin film devices. After plating in Bi-Te solutions of 20 mM concentration, which were prepared by dissolving $Bi_2O_3$ and $TeO_2$ into 1M $HNO_3$, thermoelectric properties of the films were characterized with variation of the Te/(Bi+Te) ratio in a plating solution. With increasing the Te/(Bi+Te) ratio in the plating solution from 0.5 to 0.65, Seebeck coefficient of Bi-Te films changed from $-59{\mu}V/K$ to $-48{\mu}V/K$ and electrical resistivity was lowered from $1m{\Omega}-cm$ to $0.8m{\Omega}-cm$ due to the increase in the electron concentration. Maximum power factor of $3.5{\times}10^{-4}W/K^2-m$ was obtained for the Bi-Te film with the $Bi_2Te_3$ stoichiometric composition. Using multilayer overhang process, the photoresist pattern to form thermoelectric legs of 30 m depth and 100m diameter was successfully fabricated fur micro thermoelectric device applications.

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A Study on the Self-annealing Characteristics of Electroplated Copper Thin Film for DRAM Integrated Process (DRAM 집적공정 응용을 위한 전기도금법 증착 구리 박막의 자기 열처리 특성 연구)

  • Choi, Deuk-Sung;Jeong, Seung-Hyun
    • Journal of the Microelectronics and Packaging Society
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    • v.25 no.3
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    • pp.61-66
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    • 2018
  • This research scrutinizes the self-annealing characteristics of copper used to metal interconnection for application of DRAM fabrication process. As the time goes after the copper deposited, the grain of copper is growing. It is called self-annealing. We use the electroplating method for copper deposition and estimate two kinds of electroplating chemicals having different organic additives. As the time of self-annealing is elapsed, sheet resistance decreases with logarithmic dependence of time and is finally saturated. The improvement of sheet resistance is approximately 20%. The saturation time of experimental sample is shorter than that of reference sample. We can find that self-annealing is highly efficient in grain growth of copper through the measurement of TEM analysis. The structure of copper grain is similar to the bamboo type useful for current flow. The results of thermal excursion characteristics show that the reliability of self-annealed sample is better than that of sample annealed at higher temperature. The self-annealed sample is not contained in hillock. The self-annealed samples grow until $2{\mu}m$ and develop in [100] direction more favorable for reliability.

Review on the LTCC Technology (LTCC 기술의 현황과 전망)

  • 손용배
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2000.11a
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    • pp.11-11
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    • 2000
  • 이동통신기술의 급격한 발달로 고주파회로의 packaging과 interconnect 기술의 고성능화 와 저가격화에 대한 새로운 도전이 요구되고 있다‘ 대부분 기존의 무선통신 부품은 P PCB(Printed Wiring Board)기술을 활용하고 있으나 이러한 기술이 점차로 고주파화되는 경 향을 만족시킬수 없어 새로운 고주파 부품기술이 요구되고 있는 실정이다 .. RF 회로를 구성 하기 위하여 PCB소재의 환경적, 치수안정성 문제를 극복하기 위하여 L TCC(Low T Temperature Cofired Ceramics)기술이 최근 주목을 받고 있다. 차세대 이동통신 기술은 수십 GHz 이상의 고주파특성이 우수하고, 고성능의 초소형의 부품을 저가격으로 제조할수 있으며, 시장의 변화에 기민하게 대처할수 있는 기술이 요구되 고 있으며, 이러한 기술적 필요성에 부합할수 있도록 LTCC 기술이 제안되었다. 이러한 C Ceramic Interconnect 기술은 높은 신뢰성을 바탕으로 fine patterning 기술과 저가의 m metallizing 기술로 가능하게 되었다. 초고주파 통신부품기술은 미국과 유럽 등을 중심으로 G GHz 대역또는 mm wave 대역의 기술에 대하여 치열한 기술개발 경쟁을 벌이고 있으며, 이 러한 고주파 패키징 기술을 바탕으로 미래의 군사, 항공, 우주 및 이동통신 기술에 지대한 영향을 미칠수 있는 기반기술로 자리잡을 전망이다. L LTCC 기술은 기존의 후막혼성기술에 비하여 공정이 단순하고 대량생산이 가능하고 가 격이 비교적 저렴하다. 또한 다층구조로 제작할수 있고, 수동소자를 내장할수 있어 회로의 소형화와 고밀도화가 가능하다. 특히 무선으로 초고속 정보를 처리하기 위하여 이동통신기 기의 고주파화가 빠르게 진행됨에 따라서 고분자재료에 비하여 고주파특성이 우수할뿐아니 라 환경적, 치수안정성이 우수한 세라믹소재플 사용함으로써 고주파 손실율을 저감할 수 있 다 .. LTCC 기술은 후막회로 기술과 tape dielectric 기술이 결합된 기술이다. 표준화된 소재 와 공정기술을 활용하여 저가격으로 고성능소자플 제작할 수 있으며, 전극재료로서 높은 전 도도를 갖고 있는 Ag, Cu, Au 및 Pd! Ag릎 사용함으로써 고주파 손실을 저감시킬 수 있다. L LTCC 기술이 최종적으로 소형화, 고기능 고주파 부품기술로 지속적으로 발전하기 위하여 무수축(Zero shrinkage) 소성기술, 광식각 후막기술 등이 원천기술로서 확립될 수 있어야 하 며, 특히 국내의 이동통신 기술에 대한 막대한 투자에도 불구하고 차세대 이동통신 부품기 술에 대한 개발은 상대적으로 미흡한 실정이므로 국내에 LTCC 관련 소재공정 및 부품소자 기술에 대한 개발투자가 시급히 이루워져야 할 것으로 판단된다. 본 발표에서는 지금까지 국내외 LTCC 기술의 발전과정을 정리하였고, 현재 이 기술의 응용과 소재와 공정을 중심으로한 개발현황에 대하여 조사하였으며, 앞으로 LTCC가 발전 해야할 방향을 제시하고자 한다.

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Thermoelectric Characteristics of the p-type $(Bi,Sb)_2Te_3$ Nano-Bulk Hot-Pressed with Addition of $ZrO_2$ as Nano Inclusions ($ZrO_2$를 나노개재물로 첨가한 p형 $(Bi,Sb)_2Te_3$ 나노벌크 가압소결체의 열전특성)

  • Yeo, Y.H.;Kim, M.Y.;Oh, T.S.
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.3
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    • pp.51-57
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    • 2010
  • Thermoelectric properties of the p-type $(Bi,Sb)_2Te_3$, hot-pressed with the $(Bi,Sb)_2Te_3$ powders fabricated by melting/grinding method, were characterized with variation of the hot-pressing conditions. Thermoelectric characteristics of the hot-pressed $(Bi,Sb)_2Te_3$ were also analyzed with addition of $ZrO_2$ as nano inclusions. With increasing the hotpressing temperature from $350^{\circ}C$ to $550^{\circ}C$, Seebeck coefficient and electrical resistivity decreased from 275 ${\mu}V$/K to 230 ${\mu}V$/K and 6.68 $m{\Omega}$-cm to 1.86 $m{\Omega}$-cm, respectively. The power factor decreased with addition of $ZrO_2$ nano powders more than 1 vol%, implying that the optimum amount of $ZrO_2$ nano inclusions to get a maximum power factor would be less than 1 vol%.

Copper Filling to TSV (Through-Si-Via) and Simplification of Bumping Process (비아 홀(TSV)의 Cu 충전 및 범핑 공정 단순화)

  • Hong, Sung-Jun;Hong, Sung-Chul;Kim, Won-Joong;Jung, Jae-Pil
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.3
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    • pp.79-84
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    • 2010
  • Formation of TSV (Through-Si-Via) with an Au seed layer and Cu filling to the via, simplification of bumping process for three dimensional stacking of Si dice were investigated. In order to produce the via holes, the Si wafer was etched by a DRIE (Deep Reactive Ion Etching) process using $SF_6$ and $C_4F_8$ plasmas alternately. The vias were 40 ${\mu}m$ in diameter, 80 ${\mu}m$ in depth, and were produced by etching for 1.92 ks. On the via side wall, a dielectric layer of $SiO_2$ was formed by thermal oxidation, and an adhesion layer of Ti, and a seed layer of Au were applied by sputtering. Electroplating with pulsed DC was applied to fill the via holes with Cu. The plating condition was at a forward pulse current density of 1000 mA/$dm^2$ for 5 s and a reverse pulse current density of 190 mA/$dm^2$ for 25 s. By using these parameters, sound Cu filling was obtained in the vias with a total plating time of 57.6 ks. Sn bumping was performed on the Cu plugs without lithography process. The bumps were produced on the Si die successfully by the simplified process without serious defect.

Light Efficiency of LED Package with TiO2-nanoparticle-dispersed Encapsulant (TiO2 나노입자가 혼합된 봉지재를 적용한 LED 패키지의 광효율 특성 평가)

  • Lee, Tae-Young;Kim, Kyoung-Ho;Kim, Mi-Song;Ko, Eun-Soo;Chio, Jong-Hyun;Moon, Kyoung-Sik;Kim, Mok-Soon;Yoo, Sehoon
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.3
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    • pp.31-35
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    • 2014
  • $TiO_2$-nanoparticle-dispersed silicone was applied to a LED package and the light efficiency of the LED package was evaluated in this study. The addition of $TiO_2$ nanoparticles in silicone increased refractive index, which improved the light efficiency of the LED package. The $TiO_2$ nanoparticles were fabricated by hydrothermal synthesis and were dispsersed by a vinyl silane coating treatment. After the silane treatment, the $TiO_2$ nanoparticles dispersed with diameters of 10~40 nm but rod-shape $TiO_2$ nanoparticles with lengths of 100 nm were also observed. The refractive index increased with the $TiO_2$ concentration in silicone, while the transmittance decreased with the $TiO_2$ concentration. The light efficient of the LED package with $TiO_2$+silicone encapsulant was higher than that of the LED package with no $TiO_2$ in silicone encapsulant.

Electrospraying of Micro/Nano Particles for Protein Drug Delivery (단백질 약물 전달을 위한 마이크로/나노 입자의 전기분무 제조법)

  • Yoo, Ji-Youn;Kim, Min-Young;Lee, Jong-Hwi
    • Polymer(Korea)
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    • v.31 no.3
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    • pp.215-220
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    • 2007
  • The control of the surface energy by electrohydrodynamic force provides electrospraying with various potential advantages such as simple particle size control, mono-dispersity, high recovery, and mild processing conditions. The advantages are quite helpful to improve the stability of protein drug and control its release. Herein, the nano-encapsulation of protein drugs using electrospraying was investigated. Albumin as a model protein was processed using uniaxial and co-axial electrospraying, and chitosan, polycaporlactone (PCL), and poly (ethylene glycol) (PEG) were used as encapsulation materials. The major processing parameters such as the conductivity of spraying liquids, flow rate, the distance of electrical potential gradient, etc were measured to obtain the maximum efficiency. In the chitosan systems, mean particles size decreases as flow rate and the distance between nozzle and the collecting part decreases. In the uniaxial technique of the PCL systems, mean particles size decreases as flow rate decreases. In the coaxial technique of the PCL systems, it was found that the particles size gets larger under the application of the higher ratio of inner-to-outer liquid flow rates. The primary particles formed out of an electrospraying nozzle showed narrow particle size distribution, but once they arrived to the collecting part, aggregation behavior was observed obviously. Efficient nano-encapsulation of albumin with PCL, PEG, and chitosan was conveniently achieved using electrospraying at above 12 kV.

Microencapsulation of SrAl2O4 : Eu2+,Dy3+ Phosphorescent Phosphor for Enhanced Visibility of Road Lanes (차선의 시인성 향상을 위한 SrAl2O4 : Eu2+,Dy3+ 축광 마이크로 캡슐화에 관한 연구)

  • Park, Jae Il;Jeong, Soo Hwan;Cheong, In Woo
    • Journal of Adhesion and Interface
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    • v.17 no.3
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    • pp.110-116
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    • 2016
  • A decrease in the retro-reflectivity of glass-bead-covered road paint because of a rainwater film significantly reduces the visibility of drivers at night, and has been considered as a critical cause of traffic accidents. For enhanced visibility, the microencapsulation of hydrophobically modified $SrAl_2O_4:Eu^{2+}$,$Dy^{3+}$ phosphorescent phosphor was carried out via suspension polymerization of methyl methacrylate (MMA). The effects of surface modification agent and radical initiator types, loading amount of phosphorescent phosphor, and microcapsule size on the phosphor content ($W_{TGA}$) in the luminous poly(methyl methacrylate) (PMMA) microcapsules were investigated by thermogravimetric analyses (TGA). It was found that the $W_{TGA}$ value was ranged from 7 wt% to 81 wt%, which suggests suspension polymerization is suitable for the preparation of luminous microcapsules with a wide range of phosphor content. At a lower loading amount of phosphor, the $W_{TGA}$ value obviously increased as the microcapsule size decreased; however, the $W_{TGA}$ values with a higher loading amount of phosphor were less affected by the microcapsule size. The luminous microcapsules with the size range of $425{\sim}710{\mu}m$ were collected and tested as a luminous road lanes. It was found that luminance intensities of the microcapsule-coated plates remained higher than $300mcd/m^2$ for up to 100 s in darkness after 20 min of light emitting diode lamp irradiation. The results suggest that the luminous microcapsules can be a candidate for the replacement of glass beads for enhanced visibility of drivers.

Preparation and Crystallization Kinetics of Glasses with Ferroelectric Fresnoite Crystal (강유전체 Fresnoite 결정을 갖는 유리의 제조 및 결정화 거동)

  • Lee, Hoi-Kwan;Chae, Su-Jin;Kang, Won-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.2 s.35
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    • pp.161-166
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    • 2005
  • Glass formation, thermal property and crystallization behavior were investigated in $xK_2O-(33.3-x)BaO-16.7TiO_2-50SiO_2(mole\%)$ with fresnoite($Ba_2TiSi_2O_8$) crystal by replacement BaO for $K_2O$. As x(0$\le$x$\le$20) contents increased, glass formation became easy, and crystallization temperature moved on to the low temperature. Crystal phase of the $Ba_2TiSi_2O_8$ was confirmed by XRD, and the replaced x was not effected on the formation of new crystals. The kinetics of crystallization of fresnoite were studied by applying the DTA measurements carried out at different heating rates. The average avrami exponent(n) and activation energy were changed $2.26 {\pm}0.1,\;2.03 {\pm}0.1,\;1.93{\pm}0.15$, $279 {\pm}12kJ/mole,\;302{\pm}7kJ/ mole,\;319{\pm}1kJ/mole$ according to x contents, respectively. The replaced x improved the orientation of crystal growth.

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