• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.281-287
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• 2005

in-situ electromigration test was carried out for edge drift lines of eutectic SnPb solder using Scanning Electron Microscopy (SEM). The electromigration test for the eutectic SnPb solder sample was conducted at temperature of $90^{\circ}C$ and the current density of $6{\times}10^4A/cm^2$. Edge drift at cathode and hillock growth at anode were observed in-situ in a SEM chamber during electromigration test. It was clearly revealed that eutectic SnPb solder lines has an incubation stage before void formation during electromigration test, which seemed to be related to the void nucleation stage of flip chip solder electromigration behaviors.

• Journal of the Korea Society of Computer and Information
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• v.14 no.5
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• pp.183-193
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• 2009

Both On-Line Analytical Processing (OLAF) data cubes and Statistical Databases (SDBs) deal with multidimensional data sets. and both are concerned with statistical summarizations over the dimensions of the data sets. However, there is a distinction between the two that can be made. While SDBs are usually derived from other base data, OLAF data cubes often represent directly the base data. In other word, the base data of SDBs are the macro-data, whereas the core cubiod data in OLAF data cubes are the micro-data. The base table in OLAF is used to populate the data cube with values of the measure attribute, and each record in the base tables is used to populate a cell of the core cuboid. The fact that OLAF data cubes mostly represent the micro-data may make some records be absent in the base table. Some cells of the core cuboid remain empty, if corresponding records are absent in the base table. Wang and others proposed a method for securing OLAF data cubes against privacy breaches. They assert that the proposed method does not depend on specific types of aggregation functions. In this paper, however, it is found that their assertion on aggregate functions is wrong whenever any cell of the core cuboid remains empty. The objective of this study is to design an inference control process in OLAF data cubes which rectifying Wang's error.

• Composites Research
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• v.16 no.6
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• pp.10-15
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• 2003

In RTM process, the content of microvoids can be critical due to the fact that the presence of microvoids degrades mechanical properties on the fabricated composite parts. The present paper proposes an experimental method of observation in void formation and transport. VARTM processes are performed under observation with a digital video camera and then the microvoid formation in the flow front and transport are videotaped and observed both in channels and tows. The obtained data are used in the mathematical model in order to determine the model constants. Experimental results and expected results from the mathematical model show a good agreement with each other.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.83-88
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• 2018

The electromigration (EM) tests were performed at $150^{\circ}C$ with $1.5{\times}10^5A/cm^2$ conditions in order to investigate the effect of non-conductive film (NCF) trap on the electrical reliability of Cu/Ni/Sn-Ag microbumps. The EM failure time of Cu/Ni/Sn-Ag microbump with NCF trap was around 8 times shorter than Cu/Ni/Sn-Ag microbump without NCF trap. From systematic analysis on the electrical resistance and failed interfaces, the trapped NCF-induced voids at the Sn-Ag/Ni-Sn intermetallic compound interface lead to faster EM void growth and earlier open failure.

• Proceedings of the Korean Geotechical Society Conference
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• 1999.03a
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• pp.177-184
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• 1999

In soft ground tunneling, shield method is very good for safety of neighboring structures. Although shield tunnel method has the merits to minimize the deformation of ground around tunnel, ground deformations occurred until the material grouted in tail void hardens are inevitable. In this study, the effects of micropile used as one method to restrain the settlement of neighboring structures by the tail void are studied by laboratory model tests. As a basic test result, the effective direction of micropile and the restraint rate of settlement by micropile reinforcement are known.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.11-17
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• 2010

The electromigration phenomenon in lead-free flip-chip solder joint has been one of the serious problems. To understand the mechanism of this phenomenon, the crystallographic orientation of Sn grain in the Sn-Ag-Cu solder bump has been analyzed. Different time to failure and different microstructural changes were observed in the all test vehicle and bumps, respectively. Fast failure and serious dissolution of Cu electrode was observed when the c-axis of Sn grain parallel to electron flow. On the contrary of this, slight microstructural changes were observed when the c-axis of Sn perpendicular to electron flow. In addition, underfill could enhance the electromigration reliability to prevent the deformation of solder bump during EM test.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.2
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• pp.47-53
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• 2015

The effects of electroless nickel immersion gold (ENIG) and organic solderability preservative (OSP) surface finishes on the in-situ intermetallics reaction and the electromigration (EM) reliability of Sn-3.0Ag-0.5Cu (SAC305) solder bump were systematically investigated. After as-bonded, $(Cu,Ni)_6Sn_5$ intermetallic compound (IMC) was formed at the interface of the ENIG surface finish at solder top side, while at the OSP surface finish at solder bottom side,$ Cu_6Sn_5$ and $Cu_3Sn$ IMCs were formed. Mean time to failure on SAC305 solder bump at $130^{\circ}C$ with a current density of $5.0{\times}10^3A/cm^2$ was 78.7 hrs. EM open failure was observed at bottom OSP surface finish by fast consumption of Cu atoms when electrons flow from bottom Cu substrate to solder. In-situ scanning electron microscope analysis showed that IMC growth rate of ENIG surface finish was much lower than that of the OSP surface finish. Therefore, EM reliability of ENIG surface finish was higher than that of OSP surface finish due to its superior barrier stability to IMC reaction.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.65-70
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• 2021

In this study, interfacial properties and mechanical properties of joints were reported after Cu pads finished with organic solderability preservative (OSP) on flame retardant-4 (FR-4) printed circuit board (PCB) and electronic components were joined with a Sn-57Bi-1Ag solder paste by using a laser bonding process. The laser bonding process was performed under various bonding conditions with changing a laser power and a bonding time and effects of bonding conditions on interfacial and mechanical properties of joints were analyzed. In order to apply for industry, properties of bonding joints using a reflow bonding process which are widely used were compared. When the laser bonding process were performed, we observed that Cu₆Sn₅ intermetallic compounds (IMCs) were fully formed at the interface although the bonding times were very short about 2 and 3 s. Furthermore, void formations of the joints by using the laser bonding process were suppressed at the joints with comparing to the reflow bonding process and shear strengths of bonding joints were higher than that by using the reflow bonding process. Therefore, in spite of a very short bonding time, it is expected that joints will be stably formed and have a high mechanical strength by using the laser bonding process.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.307-313
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• 2005

Electromigration behavior in the Sn96.5Ag3.0Cu0.5 solder lines was investigated and compared Sn96.5Ag3.0Cu0.5 with eutectic SnPb. Measurements were made for relevant parameters for electromigration of the solder, such as drift velocity, threshold current density, activation energy, as well as the product of diffusivity and effective charge number (DZ$\ast$). The threshold current density were measured to be $2.38{\times}10^4A/cm^2$ at $140^{\circ}C$ and the value represented the maximum current density which the SnAgCu solder can carry without electromigration damage at the stressing temperatures. The electromigration energy was measured to 0.56 eV in the temperature range of $110-160^{\circ}C$. The measured products of diffusivity and the effective charge number, DZ$\ast$ were $3.12{\times}10^{-10} cm^2/s$ at $110^{\circ}C$, $4.66{\times}10^{-10} cm^2/s$ at $125^{\circ}C$, $8.76{\times}10^{-10} cm^2/s$ at $140^{\circ}C$, $2.14{\times}10^{-9}cm^2/s$ at $160^{\circ}C$ SnPb solder existed incubation stage, while SnAgCu did not have incubation stage. It was thought that the diffusion mechanism of SnAgCu was different from that of SnPb.