Electrical Characteristics of 808 nm InAlAs Quantum Dot Laser Diode Structure (808 nm InAlAs 양자점 레이저 다이오드 구조의 전기적 특성)
-
- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
- /
- 2010.06a
- /
- pp.338-338
- /
- 2010