• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.151-151
• /
• 2008

바이폴러 트랜지스터(이하 BJT)의 고온 콜렉터-베이스 역전압 수명시험을 실시하였고, 수영시험 전후의 특성평가를 통해 BJT의 고장모드를 분석하였다. 시험조건은 주위온도 $150^{\circ}C$에서 콜렉터-베이스 정격 역전압의 80%를 인가한 상태에서 실시하였으며, 시료수는 57개이고 최종 목표 시험시간은 2,000시간이다. 중간측정을 통해 BJT의 특성열화를 관찰하였으며, 1,500시간 경과 후 1개 시료에서 제품규격을 벗어나는 데이터가 측정되었다. 해당 시료를 분석한 결과 콜렉터-베이스 누설전류 및 전류이득($\beta$)이 증가하였고, 저주파에서의 junction capacitance 가 정상품 대비 크게 관찰되었다. 측정결과를 통해 누설전류 증가 및 이득이 증가한 원인을 추정하였다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2002.11a
• /
• pp.481-485
• /
• 2002

In this study, we fabricated the PBH-LD by meltback method using the LPE. The PBH-LDs are analyzed the leakage current that flows through leakage current path like the p-n diode and p-n-p-n current blocking layer. We observed the variation of threshold current with the leakage width $W_{ι}$. As a consequence, we confirmed that the threshold current became low in the decrease of the leakage width and in the increase of the ratio of specific resistivity of leakage region to active region. We also compared between the calculated threshold current in the absence of leakage region and the measured threshold current in the device. As a result, the ratio of specific resistivity was about 0.5 in the measured LDs, which have the width of a active layer of 1.4${\mu}{\textrm}{m}$ and leakage width of 0.6${\mu}{\textrm}{m}$.

• The Journal of Information Technology
• /
• v.7 no.2
• /
• pp.69-76
• /
• 2004

This paper presents the results of spectral analysis about waveforms and leakage current waveforms on contaminated silicon insulators under various environment conditions.(salt fog, clean fog, rain). The larger the leakage current during 200ms, the higher the power spectrum at 60Hz. If contaminated insulators suffers from high salt density fog, the leakage current occurs with high crest value intermittently, results in the low spectrum. Analysis of leakage current data showed that this electrical activity was characterized by transient arcing behavior contaminants are deposited on the insulator surface during salt fog tests. This provides a path for the leakage current to flow along the surface of the insulator. It is important to have an indication of the pollution accumulation in order to evaluate the test performance of a particular insulator. If the drop in surface resistivity is severe enough, then the leakage current may escalate into service interrupting flashover that degrade power quality.

• Proceedings of the KIEE Conference
• /
• 2005.07d
• /
• pp.3061-3062
• /
• 2005

고정밀급 저항 및 센서류를 사용할 때 정확한 전기저항의 측정이 요구되므로 누설전류 혹은 누설저항 효과는 중요한 측정오차로 나타난다. 그 누설효과를 측정하는 두 가지 방법들에 의한 측정결과와 여기서 제안하는 방법의 결과를 서로 비교하였다. 세 가비 방법 모두 비슷한 결과를 나타내었으나 제시한 방법의 결과가 조금 더 크게 나타났다. 그 원인은 누설경로가 생기는 부분들에 대한 해석의 차이와 수 pA 정도의 적은 누설전류로 인하여 시간적으로 보다 안정된 상태에서 측정이 되어야 한다는 점에서 비롯된다고 생각된다.

• Journal of the Korean Institute of Gas
• /
• v.13 no.2
• /
• pp.1-6
• /
• 2009

With respect to a given structure, a stray current is to be defined as a current flowing on a structure that is not part of the intended electrical circuit. Most often DC-powered traction systems like railroads and tramlines are responsible for large dynamic stray currents. This type of stray current is generally results from the leakage of return currents from large DC traction systems that are grounded or have a bad earth-insulated return path. At the place where the current leaves the rail and metallic structures, electrolytic corrosion may take place. This paper investigates the domestic conditions on the electrolytic corrosion protection of buried metallic structures adjacent to DC traction systems by survey.

• Electric Engineers Magazine
• /
• s.378
• /
• pp.36-37
• /
• 2014

2013. 6. 16(일) 06:15경, 경기도 남양주시 소재 ${\bigcirc}{\bigcirc}$식품 두부제조 공장에서 공장장인 재해자(남, 48세)가 혼자서 콩 분쇄기를 점검 조정 하던 중, 누설전류가 양손 간으로 흐르면서 감전 사망한 것으로 추정되는 재해임.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.10 no.4
• /
• pp.718-723
• /
• 2006

Optical module plays an important role in the construction of high speed communication network. Laser diode is a component of optical module, and its characteristics are dependent of temperature, so many researches are reported. In this paper, we proposed the electrical equivalent circuit of PBH-LD based on the rate equations. And, the two leakage paths exit outside the active region. One path is converted pn-diode and the other path is converted two transistors using npn-Tr and pnp-Tr. In order to reduce the leakage currents, we observed the dependence of carrier concentrations of current blocking layers using PSPICE simulator.

• Journal of the Korean Vacuum Society
• /
• v.21 no.4
• /
• pp.193-198
• /
• 2012

In this study, we have fabricated the polymer insulator and diamond-like carbon (DLC) thin films by using plasma enhanced chemical vapor deposition methods. we fabricated the DLC films with various thicknesses as the passivation layer on plasma polymer and investigated the structural, physical, and electrical properties of DLC/plasma polymer films. The plasma polymer synthesized in this work had the low leakage current and low dielectric constant. The values of hardness and elastic modulus in DLC/plasma polymer films are increased, and the value of rms surface roughness is decreased, and contact angle value is increased with increasing DLC film thickness. In the electrical properties of DLC/plasma polymer, the value of the dielectric constant is increased, however the leakage current property of the DLC/plasma polymer is improved than that of plasma polymer film with increasing DLC film thickness.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.22 no.4
• /
• pp.150-159
• /
• 2021

This study aimed to prevent inconvenience to electric vehicle users caused by an interruption of charging by the earth leakage breaker trip that occurs during charging. As a field case study, it was confirmed that during the battery charger failure type, leakage current measurement experiment by vehicle type, and leakage current breaker operation experiment, the internal temperature of the charger rose to more than 60 ℃ in summer, and the earth leakage circuit breaker stopped charging by tripping at 80% of the rated sensitivity current. Through Joule heating modeling, 32A is energized at the reference temperature of 30 ℃ at the initial time t=0 (s). After t=3000 (s), the heat generated around the charging part of the earth leakage breaker increased to 32.4 ℃. The temperature and time factors correlated with the amount of heat generated according to the statistical verification tool with a correlation coefficient of 0.97. Overall, it is possible to prevent the leakage breaker sensitivity current trip due to an increase in temperature inside the charger in summer by performing a Joule heating simulation according to the material of the charging case, the arrangement of the internal wiring, and the dielectric medium when developing the charger device.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.20 no.10
• /
• pp.1927-1934
• /
• 2016

In this paper, we proposed a I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistor) structure in order to mitigate a radiation-induced leakage current path in an isolation oxide interface of a silicon-based standard n-MOSFET. The proposed I-gate n-MOSFET structure was designed by using a layout modification technology in the standard 0.18um CMOS (Complementary Metal Oxide Semiconductor) process, this structure supplements the structural drawbacks of conventional radiation-tolerant electronic device using layout modification technology such as an ELT (Enclosed Layout Transistor) and a DGA (Dummy Gate-Assisted) n-MOSFET. Thus, in comparison with the conventional structures, it can ensure expandability of a circuit design in a semiconductor-chip fabrication. Also for verification of a radiation-tolerant characteristic, we carried out M&S (Modeling and Simulation) using TCAD 3D (Technology Computer Aided Design 3-dimension) tool. As a results, we had confirmed the radiation-tolerant characteristic of the I-gate n-MOSFET structure.