• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.9A
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• pp.755-761
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• 2005

In this paper, we proposed a channel estimation method by impulse signal train in OFDM. In order to estimate the channel response, 4 impulse signals are generated and transmitted during one OFDM (Orthogonal Frequency Division Multiplexing) symbol. The intervals between the impulse signals are all equal in time domain. At the receiver, the impulse response signals are summed and averaged. And then, the averaged impulse response signal is zero padded and fast Fourier transformed to obtain the channel estimation. The BER performance of the proposed method is compared with those of conventional estimation method using the long training sequence in fast fading environments. The simulation results show that the proposed method improves by 3 dB in terms of Eb/No, compared with the conventional method.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.5
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• pp.917-922
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• 2018

In the conventional interchannel interference self-cancellation (ICI-SC) schemes, the length of sampling window is the same as the symbol length of orthogonal frequency division multiplexing (OFDM). Thus, the number of complex operations to compute the interference coefficient of each subchannel is significantly increased. To solve this problem, we present an approximated mathematical model for the coefficients of ICI-SC schemes. Based on the proposed approximation, we analyze mean squared error (MSE) and computational complexity of the ICI-SC schemes with the length of sampling window. As a result, the presented approximation has an error of less than 0.01% on the MSE compared to the original equation. When the number of subchannels is 1024, the number of complex computations for the interference coefficients is reduced by 98% or more. Since the computational complexity can be remarkably reduced without sacrificing the self-cancellation capability, it is considered that the proposed approximation is very useful to develop an algorithm for the ICI-SC scheme.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.37 no.3
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• pp.213-219
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• 2013

This study examined the static characteristics of a spool valve with a hybrid lap between the spool land and the sleeve. The static equation for the pressure characteristics was derived from flow equations that depend on the spool displacement, and the final model was derived from $q_a=q_b=0$ because the pressure characteristics test needs to block the control port in the valve. The static equation for the flow characteristics was derived from the pressure characteristics when the control port is open ($q_a=q_b$, $p_a=p_b$). The characteristic equation in the shifted region was assumed from the proportional relationship between the pressure-flow characteristics and the spool displacement.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.5
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• pp.1143-1148
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• 2014

This paper has analyzed the change of subthreshold swing for doping distribution function of asymmetric double gate(DG) MOSFET. The basic factors to determine the characteristics of DGMOSFET are dimensions of channel, i.e. channel length and channel thickness, and doping distribution function. The doping distributions are determined by ion implantation used for channel doping, and follow Gaussian distribution function. Gaussian function has been used as carrier distribution in solving the Poisson's equation. Since the Gaussian function is exactly not symmetric for top and bottome gates, the subthreshold swings are greatly changed for channel length and thickness, and the voltages of top and bottom gates for asymmetric double gate MOSFET. The deviation of subthreshold swings has been investigated for parameters of Gaussian distribution function such as projected range and standard projected deviation in this paper. As a result, we know the subthreshold swing is greatly changed for doping profiles and bias voltage.

• Journal of the Korean Institute of Gas
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• v.10 no.3 s.32
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• pp.7-12
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• 2006

In this paper, a new evaluation scheme is suggested to estimate load-carrying capacities of wall thinned pipes. At first, computational fluid dynamics analyses employing steady-state and incompressible flow are carried out to determine pressure distributions in accordance with conveying fluid. Then, the variational pressures are applied as input condition of structural finite element analyses to calculate local stresses at the deepest point. The efficiency of proposed scheme was proven from comparison to conventional analyses results and it is recommended to consider the fluid structure interaction effect for exact integrity evaluation.

• Journal of the Korean School Mathematics Society
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• v.18 no.2
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• pp.223-240
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• 2015

This paper deals with how to design and develop white-box based e-learning contents which are equipped with conceptual understanding and step-by-step computational procedures for studying vector calculus for science-engineering majors who might need supplementary mathematics learning. Noting that rewriting rules are often used in school mathematics for students' problem solving, the theoretical aspects of rewriting rules are reviewed for developing supplementary e-learning contents for them. The software design of step-by-step problem solving requires careful arrangement of rewriting rules and pattern matching techniques for white-box procedures using a computer algebra system such as Mathematica. Several modules for step-by-step problem solving as well as producing dynamic display of e-learning contents was coded by Mathematica in order to find the length of a curve in vector calculus after implementing several rules for differentiation and integration. The developed contents are equipped with diagnostic modules and immediate feedback for supplementary learning in terms of a tutorial. At the end, this paper indicates the strengths and features of the developed contents for college students who need to increase math learning capabilities, and suggests future research directions.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.12
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• pp.2939-2945
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• 2014

This paper has analyzed the change of threshold voltage for oxide structure of symmetric and asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET can be fabricated with different top and bottom gate oxide thickness, while the symmetric DGMOSFET has the same top and bottom gate oxide thickness. Therefore optimum threshold voltage is considered for top and bottom gate oxide thickness of asymmetric DGMOSFET, compared with the threshold voltage of symmetric DGMOSFET. To obtain the threshold voltage, the analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. We investigate for bottom gate voltage, channel length and thickness, and doping concentration how top and bottom gate oxide thickness influences on threshold voltage using this threshold voltage model. As a result, threshold voltage is greatly changed for oxide thickness, and we know the changing trend greatly differs with bottom gate voltage, channel length and thickness, and doping concentration.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.9
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• pp.2183-2188
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• 2014

This paper has analyzed threshold voltage movement for channel doping concentration of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is generally fabricated with low doping channel and fully depleted under operation. Since impurity scattering is lessened, asymmetric DGMOSFET has the adventage that high speed operation is possible. The threshold voltage movement, one of short channel effects necessarily occurred in fine devices, is investigated for the change of channel doping concentration in asymmetric DGMOSFET. The analytical potential distribution of series form is derived from Possion's equation to obtain threshold voltage. The movement of threshold voltage is investigated for channel doping concentration with parameters of channel length, channel thickness, oxide thickness, and doping profiles. As a result, threshold voltage increases with increase of doping concentration, and that decreases with decrease of channel length. Threshold voltage increases with decrease of channel thickness and bottom gate voltage. Lastly threshold voltage increases with decrease of oxide thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.222-222
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• 2007

RF circuit을 구현하는데 있어서 기판의 전기적 특성을 정확하게 아는 것은 원하는 결과를 추출하기 위해 매우 중요하다. 본 연구에서는 현재 사용되고 있는 PI 기판의 전기적인 특성인 유효 유전율과 loss tangent 값을 T-resonator률 이용해 정확하게 측정하고자 했다. T-resonator는 microstrip 구조로 구현 되었으며 conductor material은 Cu를 사용하였다. PI 기판의 두께는 25um, Cu의 두께는 PI 기판의 종류에 따라 12um 와 18um, T-resonator line width는 50um로 구현하였다. 또한 공진 주파수에 따라 stub 길이가 다른 10개의 T-resonator를 제작하였다. PI 기판의 유효 유전율을 구하기 위해 stub 길이의 open-end effect와 T-junction effect를 고려하였으며 수식을 통해 정확한 유효 유전률을 추출하였다. 또한 PI 기판의 loss tangent 추출에 필요한 dielectric loss를 추출하기 위해 unload quality factor를 분석하였다. Unload quality factor는 dielectric loss, conductor loss, radiation loss를 구성되며 conductor loss와 radiation loss를 수식에 의해 구하고 dielectric loss를 추출 하였다. 추출 된 dielectric loss를 통해 각각의 T-resonator의 loss tangent 값을 구하였다. T-resonator를 이용한 PI 기판의 측정은 비교적 복잡한 수식에 의해 이루어지지만 정확한 data를 얻을 수 있고 다른 재료의 전기적 특성을 추출하는데 응용이 가능하다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.748-751
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• 2014

This paper has analyzed threshold voltage movement for channel doping concentration of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is generally fabricated with low doping channel and fully depleted under operation. Since impurity scattering is lessened, asymmetric DGMOSFET has the adventage that high speed operation is possible. The threshold voltage movement, one of short channel effects necessarily occurred in fine devices, is investigated for the change of channel doping concentration in asymmetric DGMOSFET. The analytical potential distribution of series form is derived from Possion's equation to obtain threshold voltage. The movement of threshold voltage is investigated for channel doping concentration with parameters of channel length, channel thickness, oxide thickness, and doping profiles. As a result, threshold voltage increases with increase of doping concentration, and that decreases with decrease of channel length. Threshold voltage increases with decrease of channel thickness and bottom gate voltage. Lastly threshold voltage increases with decrease of oxide thickness.