• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.255-255
• /
• 2016

Resistive random access memory (ReRAM)는 낮은 동작 전압, 빠른 동작 속도, 고집적화 등의 장점으로 인해 차세대 비휘발성 메모리 소자로써 많은 관심을 받고 있다. 최근에 ReRAM 절연막으로 NiOx, TiOx, AlOx TaOx, HfOx와 같은 binary metal oxide 물질들을 적용하는 연구가 활발히 진행되고 있다. 특히, HfOx는 안정적인 동작 특성을 나타낸다는 점에서 ReRAM 절연막 물질로 적합하다고 보고되고 있다. ReRAM 절연막을 형성할 때, 물리 기상 증착 방법 (PVD)이나 화학 기상 증착법 (CVD)과 같은 방법이 많이 이용된다. 이러한 증착 방법들은 고품질의 박막을 형성시킬 수 있는 장점이 있다. 하지만, 높은 온도에서의 공정과 고가의 진공 장비가 이용되기 때문에 경제적인 문제가 있으며, 기판 또는 금속에 플라즈마 손상으로 인한 문제가 발생할 수 있다. 따라서 이러한 문제점들을 개선하기 위해 용액 공정이 많은 관심을 받고 있다. 용액 공정은 공정과정이 간단할 뿐만 아니라 소자의 대면적화가 가능하고 공정온도가 낮으며 고가의 진공장비가 필요하지 않은 장점을 가진다. 따라서 본 연구에서는, 용액공정을 이용하여 HfOx 기반의 ReRAM 제작하였고 $25^{\circ}C$와 $85^{\circ}C$에서 ReRAM의 동작특성에 미치는 compliance current의 영향을 평가하였다. 실험 방법으로는, hafnium chloride (0.1 M)를 2-methoxyethanol에 충분히 용해시켜서 precursor를 제작하였다. 이후, p-type Si 기판 위에 습식산화를 통하여 300 nm 두께의 SiO2 절연층을 성장시킨 후, 하부전극을 형성하기 위해 electron beam evaporation을 이용하여 10/100 nm 두께의 Ti/Pt 전극을 증착하였다. 순차적으로, 제작된 산화물 precursor를 이용하여 Pt 위에 spin coating 방법으로 1000 rpm 10 초, 6000 rpm 30초의 조건으로 두께 35 nm의 HfOx 막을 증착하였다. 최종적으로, solvent 및 불순물을 제거하기 위해 $180^{\circ}C$의 온도에서 10 분 동안 열처리를 진행하였으며, 상부 전극을 형성하기 위해 electron beam evaporation을 이용하여 Ti와 Al을 각각 50 nm, 100 nm의 두께로 증착하였다. ReRAM 동작에서 compliance current가 미치는 영향을 평가하기 위하여 compliance current를 10mA에서 1mA까지 변화시키면서 측정한 결과, $25^{\circ}C$에서는 compliance current의 크기와 상관없이 일정한 메모리 윈도우와 우수한 endurance 특성을 얻는 것을 확인하였다. 한편, $85^{\circ}C$의 고온에서 측정한 경우에는 1mA의 compliance current를 적용하였을 때, $25^{\circ}C$에서 측정된 메모리 윈도우 크기를 비슷하게 유지하면서 더 우수한 endurance 특성을 얻는 것을 확인하였다. 결과적으로, 용액공정 방법으로 제작된 ReRAM을 측정하는데 있어서 compliance current를 줄이면 보다 우수한 endurance 특성을 얻을 수 있으며, ReRAM 소자의 전력소비감소에 효과적이라고 기대된다.

• Applied Chemistry for Engineering
• /
• v.20 no.6
• /
• pp.653-657
• /
• 2009

Nitrous oxide is a typical greenhouse gas which is produced from various organic or fossil fuel combustion processes as well as chemicals producing plants. $N_2O$ has a global worming potential of 310 times that of $CO_2$ on per molecule basis, and also acts as an ozone depleting material in the stratosphere. However, its removal is not easy for its chemical stability characteristics. Most SCR processes with several effective reducing agents generally require the operation temperature higher than $450^{\circ}C$, and the catalytic conversion becomes decreased significantly when NOx is present in the stream. Present experiments have been performed to obtain basic design data of actual application concerning the effects of $SO_2$ and $NH_3$ on the interim and long term activities of $N_2O$ reduction with CO over the mixed metal oxide (MMO) catalyst derived from a hydrotalcite-like compound precursor. The MMO catalysts used in the experiments, have shown prominent activities displaying full conversions of $N_2O$ near $200^{\circ}C$ when CO is introduced. The presence of $SO_2$ is considered to show no critical behavior as can be met in the $NH_3$ SCR DeNOx systems and the effect of $NH_3$ is considered to play as mere an impurity to share the active sites of the catalysts.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.234-234
• /
• 2010

최근 CMOS 소자 크기가 축소됨에 따라 소스와 드레인 영역에서의 접촉저항을 줄이기 위하여, 실리사이드 공정이 많이 연구되고 있다. 실리사이드 물질로서 NiSi는 낮은 저항률과 낮은 실리콘 소모, 낮은 공정온도, 등의 장점을 가지고 있다. 그러나, 실리사이드 형성으로 인한 나노소자의 소오스/드레인에서정션(junction) 누설전류의 증가는 큰 문제가 되므로 실리콘과 실리사이드 계면의 특성이 중요하다. 본 연구에서는 니켈을 이용한 실리사이드 형성시 계면 활성제인 에틸 요오드를 이용하여 실험을 진행하였다. 금속 유기 전구체인 MABONi을 사용하여 ALD 방식으로 증착 한 니켈 박막과 니켈 핵 형성시 계면활성제인 에틸요오드의 처리 방법에 따른 Ni-silicide 박막의 특성을 비교, 분석하였다. 먼저 자연산화막을 건식식각으로 제거한 뒤, 첫 번째 샘플에서는 10회의 주기로 초기 니켈을 증착한 뒤, 에틸요오드로 니켈의 표면 위를 처리하고, 다시 200회의 주기로 니켈을 증착하였으며, 두 번째는 첫 번째 방식에서 에틸요오드 주입 시 동시에 수소도 함께 주입하였다. 세 번째는 비교를 위해 에틸요오드 처리를 하지 않고 니켈 박막만을 증착 하였다. 이어서, 각 샘플을 급속 열처리 장비에서 $400^{\circ}C$부터 $900^{\circ}C$까지 각각 30sec간 열처리를 진행후, 반응하지 않은 잔여 니켈을 제거한 후, XRD(x-ray diffraction), AES(auger), 그리고 4-point probe 등을 이용하여 형성된 실리사이드의 특성을 분석하였다. 에틸요오드와 함께 수소를 주입한 경우 계면에서의 산소 불순물과 카본 성분이 효과적으로 제거되어 $400^{\circ}C$에서 $2.9{\Omega}/{\Box}$ 의 낮은 면저항을 가지는 NiSi가 형성되었고 모든 온도구간에서 다른 샘플에 비하여 가장 낮은 면저항 분포를 보였다. 이는 분해 흡착된 요오드에 의한 계면 특성 향상과 카본 성분이 포함된 잔여물들이 수소처리에 의해 효율적으로 제거되어 실리사이드의 특성이 향상되었기 때문이다. 계면활성제를 사용하지 않은 경우에는 $500^{\circ}C$에서 NiSi가 형성되었다. 반면에 에틸요오드로만 표면을 처리한 경우에는 니켈과 실리콘 계면에서의 카본 성분에 의하여 silicidation 이 충분히 일어나지 않았다. 이러한 결과는 향후 45nm 이하의 CMOS 공정상에서 소스와 드레인의 낮은 누설전류를 가지고, 접촉저항을 줄이기 위한 니켈 실리사이드 형성에 큰 도움을 줄 것으로 기대된다.

• Journal of the Korea Organic Resources Recycling Association
• /
• v.31 no.3
• /
• pp.35-41
• /
• 2023

In this study, silicon sludge generated in semiconductor manufacturing process is recycled and applied as materials for pigments and paints. In detail, metallic impurities are removed from silicon sludge to obtain plate-like silicon sludge powder (SW-sludge), which is then coated with titanium dioxide via sol-gel method (TCS-sludge). SW-sludge and TCS-sludge are dispersed in hydrophilic transparent varnish and sprayed onto glass substrates to observe the possibility for the application as materials for pigments and paints. Notably, the applicability of TCS-sludge-based paint is improved compared to SW-sludge-based paint after the titanium dioxide coating. Moreover, the color of TCS-sludge-based paint turns into white. Accordingly, it is confirmed that the applicability and hydrophilicity are improved by the presence of outer titanium dioxide layer. In this regard, it is expected that the recycled TCS-sludge may be a future material for the application as pigments and paints.

• Journal of the Korean Electrochemical Society
• /
• v.17 no.2
• /
• pp.111-118
• /
• 2014

The electrochemical properties using the cells assembled with the synthesized $LiCoO_2$(LCO) were evaluated in this study. The LCO was synthesized from high-purity cobalt sulfate($CoSO_4$) which is recovered from the cathode scrap in the wastes lithium ion secondary battery(LIB). The leaching process for dissolving the metallic elements from the LCO scrap was controlled by the quantities of the sulfuric acid and hydrogen peroxide. The metal precipitation to remove the impurities was controlled by the pH value using the caustic soda. And also, D2EHPA and $CYANEX^{(R)}272$ were used in the solvent extraction process in order to remove the impurities again. The high-purity $CoSO_4$ solution was recovered by the processes mentioned above. We made the 6 wt.% $CoSO_4$ solution mixed with distilled water. And the 6 wt.% $CoSO_4$ solution was mixed with oxalic acid by the stirring method and dried in oven. $LiCoO_2$ as a cathode material for LIB was formed by the calcination after the drying and synthesis with the $Li_2CO_3$ powder. We assembled the cells using the $LiCoO_2$ powders and evaluated the electrochemical properties. And then, we confirmed possibility of the recyclability about the cathode materials for LIBs.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.2
• /
• pp.193-204
• /
• 1998

The single crystal of the $LiTaO_3$has large electro-optic effects, so it is applied to optical switch, acousto-optic deflector, and optical memory device as hologram using photorefractive effect. In this study, optic-grade undoped $LiTaO_3$and Fe:LiTaO$LiTaO_3$single crystals were grown by the Czochralski method and optical transmission and absorption spectrums were measured in the wavelength of UV-VIS range. The curie temperature was determined with DSC and by measuring capacitance for the grown undoped crystal and ceramic powder samples of various Li/Ta ratio. In case of having a 48.6 mol% $Li_2O$ as a starting Li/Ta ratio, the results of concentration variations were below 0.01 mol% $Li_2O$ all over the crystal, so it was confirmed that $LiTaO_3$single crystals were grown under congruent melting composition having optical homogeneity. The curie temperature of the Fe:$LiTaO_3$crystal was increased with increased with increased doped Fe concentrations;by the ratio of $7.5^{\circ}C$ increase per Fe 0.1 wt%. Also, the optical transmittance was about 78 %, which was sufficient for optical device.

• Journal of Dental Rehabilitation and Applied Science
• /
• v.33 no.2
• /
• pp.71-79
• /
• 2017

Purpose: Ni-Cr alloy does not contain Beryllium, causing the metal compound to form oxides in the furnace but by using Titanium as a chemical catalyst the forming of the oxides can be controlled, and by controlling the impurities formed on the metal surface, the possibility of the Ni-Cr alloy bond strength being increased can be analysed. Materials and Methods: Titanium was used as a chemical catalyst in the porcelain for the oxidation of beryllium-free metal (Ni-Cr) alloy. The T1 group, which does not use Titanium power as a chemical catalyst is a reference model for comparison. The T2 group and T3 group used 10 g and 20 g of Titanium power, respectively. They are fabricated to observe the shear bond strength and surface properties. There was no significance when One-way ANOVA analysis/Tukey Honestly Significant Difference Test was conducted for statistical analysis among groups (P > 0.05). Results: Results of measuring the three-point flexural bond strength of the Ni-Cr alloy and thickness of the oxide film. Experiment T3 using 20 g Titanium chemical catalyst: $39.22{\pm}3.41MPa$ and $6.66{\mu}m$, having the highest bond strength and thinness of oxide film. Experiment T2 using 10 g Titanium chemical catalyst: $34.65{\pm}1.39MPa$ and $13.22{\mu}m$. Experiment T1 using no Titanium chemical catalyst: $32.37{\pm}1.91MPa$ and $22.22{\mu}m$. Conclusion: The T2 and T3 experiments using Titanium chemical catalyst showed higher bond strength for the Ni-Cr alloy and lower thickness of oxide film than experiment T1, and the titanium catalyst being able to increase bond strength was observed.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.10 no.7
• /
• pp.1281-1286
• /
• 2006

We have used the silicon-carbide(4H-SiC) instead of conventional silicon materials to develope of the planar junction barrier schottky rectifier for ultra high breakdown voltage(1,200 V grade). The substrate size is 2 inch wafer, Its concentration is $3*10^{18}/cm^{3}$ of $n^{+}-$type, thickness of epitaxial layer $12{\mu}m$ conentration is $5*10^{15}cm^{-3}$ of n-type. The fabticated devices are junction barrier schottky rectifier, The guard ring for improvement of breakdown voltage is designed by the box-like impurity of boron, the width and space of guard ring was designed by variation. The contact metals to rectify were used by the $Ni(3,000\:{\AA})/Au(2,000\:{\AA})$. As a results, the on-state voltage is 1.26 V, on-state resistance is $45m{\Omega}/cm^{3}$, maximum value of improved reverse breakdown voltage is 1180V, reverse leakage current density is $2.26*10^{-5}A/CM^{3}$. We had improved the measureme nt results of the electrical parameters.

• Resources Recycling
• /
• v.19 no.4
• /
• pp.41-50
• /
• 2010

A fundamental study was carried out to develop a process for recycling tungsten and cobalt from WC-Co hardmetal sludge generated in the manufacturing process of hardmetal tools. The complete extraction of cobalt and simultaneous formation of tungstic was achieved by treating the sludge using aqua regia. The effect of aqua regia concentration, reaction temperature and time, pulp density on cobalt leaching and tungstic acid formation was investigated. The complete leaching of cobalt was attained at the optimum conditions: 100 vol.% aqua regia concentration, $100^{\circ}C$ temperature, 60 min. reaction time and 400 g/L pulp density. A complete conversion of tungsten carbide of the sludge to tungstic acid was however, obtained at the pulp densities lower than 150 g/L under the above condition. The progress of reaction during the aqua regia treatment of the sludge was monitored through the XRD phase identification of the residue. The metallic impurities in the tungstic acid so produced could be further removed as insoluble residues by dissolving the tungsten values in ammonia solution. The ammonium paratungstate($(NH_4)_{10}{\cdot}H_2W_{12}O_{42}{\cdot}4H_2O$) of 99.85% purity was prepared from the ammonium polytungstate solution by the evaporation crystallization method.

• Resources Recycling
• /
• v.18 no.5
• /
• pp.26-36
• /
• 2009

A recovery process of Ruthenium from waste electronic scrap has been investigated by means of nitric acid leaching as a part of development for scrap pretreatment process to obtaining an optimum conditions for removal of removing various impurities such as Pb, Bi, Zn, Al, Bi, Ag Fe, Co, Zr, Si. From the experiments, 90% of Pb leached with 250 g/l pulp density in 10-15% nitric acid. Leaching behavior of Ba was also similar to that of the Pb, but those of other metal impurities, such as Zn, Al, Bi, Ag, Fe, Co, Zr, showed different behavior, in which the dissolution rate increased as the concentration of nitric acid in solution is increased up to the 10% $HNO_3$ in solution and then it was constant above 10% $HNO_3$ concentrations. Meanwhile, the dissolution of Ru in $HNO_3$ solution was less then 100ppm, and that the total content of Ru in undissolved residue scrap was resulted in an increment of 50%.