• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.299-307
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• 2002

In this proposed study, a new emerging shape forming technique Direct Coagulation Casting(DCC) which enables to fabricate complex-shaped ceramic parts has been investigated using colloid surface chemistry. Various process variables affected by dispersant, coagulation agent and sintering additives, have been evaluated in order to achieve highly concentrated stabilized silicon nitride suspensions. A high solid loading of 51 vol% in the dispersed silicon nitride suspension was prepared with 1.0wt% Tetraethylammonium Hydroxide (TEAH), which obtained a stable silicon nitride suspension with sintering additives $(Al_2O_3\;and\;Y_2O_3)$ in alkaline regions. The addition of hydroxyaluminium diacetate into the suspension, which decomposed at elevated temperatures, led to coagulate of a silicon nitride suspension. In a basic medium, aluminum ions precipitated to aluminum hydroxide $(Al(OH)_3)$, leading to decreased $OH^-$ concentration and, thus, coagulated suspension.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.8
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• pp.1169-1175
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• 1993

Plasma spraying method was used to fabricated the microwave absorbing ferrite-silicon carbide on the aluminum-alloy of the fuselage of an aircraft to protect it from RADAR detection. In this paper 15[rm] instead of 34[rm], the mean size of SIC-powder for ferrite-silicon carbide surface films(I) was used. 50(Kg/h) Instead of 70(Kg/h), the powder feed and 100[mm] Instead of 80(mm), spray distance of spray parameters was used. This M/W absorbers were designed experimentally and fabricated trially, as a result of which the relative frequency bandwidth of 2.8% were obtained under the tolerance limits of the reflection coefficients lower than-10[dB], and the maximum absorption thickness becomes 0.5[mm], which is much thinner than that of the conventional ones.

• Journal of the Korean Society of Hazard Mitigation
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• v.1 no.1 s.1
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• pp.127-138
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• 2001

Although Carbon/Carbon Composites(CFRCs) have excellent mechanical properties at high temperature, the disadvantage of combustion in air restricts their applications. Thus a lot of investments have been studied to improve the drawback of CFRCs. In this study, SiC used as a thermal protective coating material possesses almost the same expansion coefficient compared to that of carbon, so SiC was coated on 4D (directional) CFRCs by Pack-Cementation process. For the 4D CFRCs coated with SiC, optical microscopy observations were performed to estimate the coating mechanism involved and TGA tests were also performed to evaluate the improvement of combustion resistance. And their high temperature combustion properties were investigated by the arc torch plasma test. From the results, it is found that the mechanical properties and high temperature combustion properties of the 4D(directional) CFRCs coated with SiC were much better than bare 4D CFRCs.

• The Korean Journal of Quaternary Research
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• v.25 no.2
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• pp.39-48
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• 2011

Phytolith analysis of sediments at the river mouth of valley bottom plains in Myosa-ri, Haman is performed. By the phytolith results, Phragmites and Oryza sativa are dominated in the lower horizon. An abundance of Paniceae and Andropogoneae indicates the active agricultural activities under wet conditions. Moreover, the results of archeological studies suggest the paddy fields in the Three States Age. The phytolith assemblages are dominated in the middle horizon and they gradually increase in the upper horizon. The rice cultivation layer is not proportional to total phytolith yield due to the dominance of Oryza sativa in the lower horizon. However, because the Oryza sativa are continuously observed over the entire sediments, it is suggested that there had been the agricultural activities for the entire periods.

• Journal of Integrative Natural Science
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• v.2 no.3
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• pp.177-184
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• 2009

신소재(고분자, 금속, 세라믹)는 기존의 재료와는 다른 우수한 특성과 새로운 기능이 있어 우리 인류 복지에 매우 중요하며 우리는 무한대 생존 경쟁에 몰리고 있다. 이 중 무기고분자는 유기고분자의 단점을 보완하는 동시에 새로운 기능성을 가지므로 산업발전에 매우 중요하다. 다양한 무기고분자의 응용분야 중 세라믹 전구체로의 사용은 첨단 산업 분야에 막대한 발전을 초래하였다. 특히 규소를 함유하는 비산화성 세라믹인 탄화규소 (SiC) 및 질화규소 ($Si_3N_4$) 세라믹은 그 산업적 용도가 다양하다. 규소 고분자는 원료 물질이 값싸고 중합 수율이 높아서 경제적이고, 분자 내 Si와 C 또는 N의 비율을 자유자제로 조정할 수가 있고, 용융성 또는 용해성이 있으므로 성형가공이 가능하며, 세라믹 잔여 수율을 증대시키기 위해서 여러 화학반응에 의해 가교도 시킬 수가 있다. 열분해 조건에 따라서 SiC와 $Si_3N_4$ 등 선택의 조절이 쉬우며, 금속과 섞어서 열분해 함으로서 세멧도 제조할 수가 있다. 이런 종류의 연구는 신소재의 총아인 금속, 고분자, 세라믹 연구들이 함께 어우러진 종합 작품이라 할 수 있겠다. 여러 유형의 유기규소 고분자들을 다양하게 합성해서 그 열분해 과정을 좀 더 면밀히 연구한다면 산업적 응용 가능성은 매우 크리라 기대된다.

• Journal of the Korean Ceramic Society
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• v.36 no.1
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• pp.21-29
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• 1999

The effects of density and pore size distribution of substrate in preparing SiC conversiton layer on graphite substrate were investigated. The chemical reaction for formation of SiC conversion layer was occurred at substrate surface or below surface through SiC gas infiltration. It was supposed that the pore size distribution required for the sufficient SiO gas infiltration and the continuous chemical reaction during conversion process was in the range of 1.0∼10.0$\mu\textrm{m}$. In the stress analysis of SiC layer with finite element method (FEM), the residual stress distribution due to thermal mismatch was shown. However, the compressive stress was measured in SiC layer by X-ray diffraction, it was presumed that the residual stress distribution of SiC layer was mainly influenced by the constraining effect of interlayer between SiC layer and graphite substrate, and the densification behaviro and the grain growth in SiC conversion layer.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.89-93
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• 2018

Ceramic substrates applied to power modules of electric vehicles are required to have properties of high thermal conductivity, high electrical insulation, low thermal expansion coefficient and resistance to abrupt temperature change due to high power applied by driving power. Aluminum nitride and silicon nitride, which are applied to heat dissipation, are considered as materials meeting their needs. Therefore, in this paper, the properties of aluminum nitride and silicon nitride as radiator plate materials were compared through a commercial analysis program. As a result, when the process of applying heat of the same condition to aluminum nitride was implemented by simulation, the silicon nitride exhibited superior impact resistance and stress resistance due to less stress and warping. In terms of thermal conductivity, aluminum nitride has superior properties as a heat dissipation material, but silicon nitride is more dominant in terms of reliability.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.4
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• pp.370-377
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• 1994

DC plasma torch which is a non-transferred type was constructed and silicon nitride powders were produced. Ar gas is used as a plasma gas and gas reactants with the carrier gas are introduced beneath the plasma ignition part. Two slits are attached and a reactive quenching gas is introduced through them. Using $SiCl_4 and NH_3$ as starting materials, silicon nitride powders were produced. As-produced powders were amorphous and crystalline silicon nitrides were obtained by heating at $1420^{\circ}C$ for two hours under nitrogen atmosphere. Silicon nitride phase was identified in the XRD patterns and IR spectrum, and the image of the powders before and after heating was observed from the TEM analysis.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.62 no.4
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• pp.293-303
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• 2017

To elucidate the physiological responses of rice plants to the essential mineral silicon (Si), we assessed the effects of treatments with Si, nitrogen ($NH_4NO_3$; ammonium nitrate), and calcium ($CaCl_2$; calcium chloride), independently or in combination on mineral uptake rates and levels of the hormones abscisic acid (ABA), gibberellin ($GA_1$) and jasmonic acid (JA). We found that nitrogen and calcium uptake was inhibited by Si application. However, solo application of nitrogen or calcium did not affect Si uptake. Compared to the untreated plants, the application of Si, $NH_4NO_3$ or $CaCl_2$ increased the endogenous hormone levels in treated plants. In particular, the concentrations of $GA_1$ and JA increased significantly after the application of Si or $NH_4NO_3$. The level of $GA_1$ observed after a treatment (solo or combine) with Si, and $NH_4NO_3$ was higher than that of the control. By contrast, independent application of $CaCl_2$ or a combined treatment with Si and $CaCl_2$ did not alter $GA_1$ levels. The highest level of $GA_1$ was present in plants given a combination treatment of Si and $NH_4NO_3$. This effect was observed at all time points (6 h, 12 h and 24 h). Endogenous JA contents were higher in all treatments than the control. In particular, a combination treatment with Si and $NH_4NO_3$ significantly increased the JA levels in plants compared to other treatments at all time points. A small increase in JA levels was observed after 6 h in plants given the $CaCl_2$ treatment. However, JA levels did not differ between plants given a $CaCl_2$ treatment and controls after 12 h or 24 h of exposure. We conclude that treatment with $CaCl_2$ alone does not affect endogenous JA levels in the short term. Endogenous ABA contents did not show any differences among the various treatments.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.145-146
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• 1997

수소화된 비정질 규소(a-Si:H)는 전자소자에서 광범위하게 사용되고 있다. 하지만 a-Si:H는 반송자 이동도가 느리고 불안정하기 때문에 그 특성개선이 요구되어진다. 본 논문은 금속기판 Mo위에 a-Si:H를 성장하고 후속 결정화 연구를 수행하였다. a-Si:H 박막은 DC 글로우 방전으로 Mo 기판위에 증착되었다. 실험에 사용되어진 열처리로는 질소분위기, 진공상태, 급속가열 및 엑시머레이저 열처리를 행하였다. 열처리 온도는 10$0^{\circ}C$에서 120$0^{\circ}C$까지 행하였다. 엑시머레이저의 에너지는 단위 펄스당 90에서 340mJ이였다. 결정화에 영향을 주는 요소로는 불순물 주입, 온도, 박막의 두께 및 열처리 시간등을 조사하였다. 불순물이 주입된 비정질규소는 진성규소보다 더 좋은 결정화를 보였다. 불순물 주입은 낮은 온도에서의 결정화에 도움을 주었다. 열처리 시간은 결정화에 큰 영향을 미치지 못하였다. 반면에 열처리 온도는 결정화에 큰 영향을 주었다.