Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Vapor phase synthesis of silicon nitride powder using DC plasma torch

DC 플라즈마 토치를 이용한 질화규소 분말의 기상합성

  • Hwang, Y. (Korea Institute of Geology, Mining and Materials, Division of Mineral Utilization) ;
  • Sohn, Y.U. (Korea Institute of Geology, Mining and Materials, Division of Mineral Utilization) ;
  • Chung, H.S. (Korea Institute of Geology, Mining and Materials, Division of Mineral Utilization) ;
  • Choi, S.K. (Korea Institute of Geology, Mining and Materials, Division of Mineral Utilization)
  • 황연 (한국자원연구소 광물활용연구부) ;
  • 손용운 (한국자원연구소 광물활용연구부) ;
  • 정헌생 (한국자원연구소 광물활용연구부) ;
  • 최상근 (한국자원연구소 광물활용연구부)
  • Published : 1994.12.01
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Abstract

DC plasma torch which is a non-transferred type was constructed and silicon nitride powders were produced. Ar gas is used as a plasma gas and gas reactants with the carrier gas are introduced beneath the plasma ignition part. Two slits are attached and a reactive quenching gas is introduced through them. Using $SiCl_4 and NH_3$ as starting materials, silicon nitride powders were produced. As-produced powders were amorphous and crystalline silicon nitrides were obtained by heating at $1420^{\circ}C$ for two hours under nitrogen atmosphere. Silicon nitride phase was identified in the XRD patterns and IR spectrum, and the image of the powders before and after heating was observed from the TEM analysis.

비이송식DC 플라즈마 토치를 제작하고 이를 이용하여 질화규소 분말을 제조하였다. Ar 가스를 사용하여 플라즈마를 발생시켯으며, 발생된 플라즈마 flame으로 반응가스 및 reactive quenching 가스를 도입하였다. 토치의 하단부에 2개의 slit를 장착하여 가스의 도입 위치를 변화시킬 수 있게 하였다. $SiCl_4와 NH_3$를 출발원료로 하여 질화규소 분말을 제조하였다. 얻어진 분말은 무정형이었으며, 반응부산물을 제거하고 $1420^{\circ}C$에서 질소 분위기하에서 가열함으로써 결정화된 질화규소 분말을 얻었다. XPD pattern 및 IR 스펙트럼으로부터 질화규소 분말을 확인하였고, TEM을 사용하여 전후의 형상을 관찰하였다.

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