• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.18 no.7
• /
• pp.710-716
• /
• 2007

In this paper, I study on the realization of 900 MHz 1 W power amplifier using a harmonic rejection circuit. The proposed harmonic rejection circuit has improved the harmonic rejection characteristic and overcoming the problems related with frequency reproducibility on the microstrip line. The proposed power amplifier, fabricated by the type of hybrid with the epoxy PCB, was composed of driver stage and power amplifier stage with harmonic rejection circuit. The fabricated power amplifier shows -24 dBc and -30 dBc of harmonic rejection characteristic at 2nd and 3rd harmonic compared with that is not used, respectively and it could be replace the filter located between an output stage and an antenna.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.20 no.1
• /
• pp.1-11
• /
• 2009

In this paper, a new 1 kW power amplifier with high efficiency and high stability in a RF generator is designed and fabricated for plasma applications. The efficiency of power amplifier is improved by using class-E amplifier that consists of one push-pull MOSFET and high current drive IC instead of class-C amplifier composed of several single ended MOSFET. Switchable damper that allows selecting three different modes of amplifiers for considering efficiency and stability is added into the amplifier for plasma applications. Stable region of an early electronic discharge section is extended to VSWR of 4.5:1 compared to conventional VSWR of 3.8:1 through using switchable damper. The dimension of the amplifier is also reduced to 30 % of conventional amplifier. The 80 % efficiency of power amplifier with switchable damper is obtained the output power of 1 kW in operating frequency of 13.56 MHz. In comparison of conventional power amplifier for plasma applications, 13 % efficiency is improved.

• Journal of Korea Multimedia Society
• /
• v.20 no.9
• /
• pp.1551-1558
• /
• 2017

Audio power amplifiers have been designed based on the premise that the impedance of loudspeakers is fixed at nominal 4 ohms or 8 ohms. However, it is known that the impedance varies with frequency and takes on the nominal value at some limited frequencies. The principle of the loudspeaker operation reveals that the sound pressure produced by the loudspeaker is proportional to the current flowing in the voice coil, not the voltage between the two terminals. We take the characteristics of the loudspeaker into account and compare the frequency responses of the loudspeaker in voltage-drive mode and current-drive mode via computer simulations, to conclude that the audio amplifier drive mode should be re-considered in an effort to improve the sound quality.

• Proceedings of the KIPE Conference
• /
• 2010.07a
• /
• pp.256-258
• /
• 2010

MPM(Microwave Power Module)은 진공 전력증폭기인 진행파관(TWT,Traveling Wave Tube)과 반도체 전력증폭기(SSA, Solid State Amplifier)를 결합한 구조로서, 미세한 RF신호를 입력 받아 고출력의 RF 신호로 증폭하는 장치이다. 본 논문은 MPM을 구동하기 위해, 필요한 수 kV이상의 높은 전압을 TWT에 공급해주는 고전압 전원공급기(HVPS, High Voltage Power Supply)에 관한 것이다. Main Topology는 Resonant Phase Shift Full Bridge Converter이며, 승압의 효과를 높이기 위해 2차 측에는 Voltage Multiplier를 사용하였다. MPM을 구동하는데 필요한 전압인Cathode(-4kV), FE_Bias(-5.25kV), Collector(-2kV)를 생성하며, FE_ON, OFF신호에 따라 고전압 스위칭 동작을 하여, RF 증폭을 제어 할 수 있다. 최종적으로 Prototype을 제작하고, 고찰된 실험결과를 제시하여 개발된 HVPS의 우수성을 검증한다.

• Journal of Navigation and Port Research
• /
• v.27 no.1
• /
• pp.81-86
• /
• 2003

In the paper, the power amplifier using active biasing for LDMOS MRF-21060 is designed and fabricated. Driving amplifier using AH1 and parallel power amplifier AH11 is made to drive the LDMOS MRF 21060 power amplifier. The variation of current consumption in the fabricated 5 Watt power amplifier has an excellent characteristics of less than 0.1A, whereas passive biasing circuit dissipate more than 0.5A. The implemented power amplifier has the gain over 12 dB, the gain flatness of less than $\pm$0.09dB and input and output return loss of less than -19dB over the frequency range 2.11~2.17GHz. The DC operation point of this power amplifier at temperature variation from $0^{\circ}C$ to $60^{\circ}C$ is fixed by active circuit.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.11
• /
• pp.89-94
• /
• 2007

For successful implementation of multi-standard transmitter, reconfigurable architecture and component design are essential. This paper presents a reconfigurable CMOS power amplifier designed CMOS 0.25 um process. Designed power amplifier can be operated at 0.9, 1.2, 1.75, and 1.85 GHz. Also, it can be used at 2.4 GHz by using bonding wire inductor. The interstage matching network is composed of two inductors and four switches, and operation frequency can be varied by controlling switches. Proposed power amplifier can be used as a power amplifier in low power applications such as ZigBee or Bluetooth application and used as a driver amplifier in high power application such as CDMA application. Designed power amplifier has 18.2 dB gain and 10.3 dBm output power at 0.9 GHz. Also, it represented 10.3 (18.1) dB gain and 5.2 (10) dBm output power at 1.75 (2.4) GHz.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.24 no.8B
• /
• pp.1464-1471
• /
• 1999

A wide-band high power amplifier to use for radiated electromagnetic field immunity testing of EMS(Electromagnetic Susceptibility) standards has to meet IEC1000-4-3 specification in the frequency bandwidth of 80MHz to 1000MHz. The power amplifier to be described in this paper consists of driving and power stages with wide-band matched circuits by estimated impedances. The mismatching protection circuit is inserted in it to prevent from damage of power device when the output port of power amplifier is opened or shorted by user's mistake. The characteristics of the power amplifier are obtained output power over 100watts, gain over 40dB and flatness of $\pm$0.3dB in the frequency range of 80 ~300MHz. The harmonics suppression characteristics is measured over 20dBc. This wide-band high power amplifier can be useful fur radiated electromagnetic field immunity testing of IEC 1000-4-3 standard.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.17 no.11
• /
• pp.2479-2485
• /
• 2013

In this paper, we present a design for solid-state radar SSPA with sequential bias. We apply to variable extension pulse generator to eliminate signal distortion which is caused by bias rising/falling delay of power amplifier. There is an optimum impedance matching circuit to have high efficiency of GaN-power device by measuring microwave characteristics through load-pull method. The designed SSPA is consisted of pre-amplifier, drive-amplifier and main-amplifier as a three stages to apply for X-Band solid-state radar. Thereby we made a 200W SSPA which has output pulse maximum power shows 53.67dBm and its average power is 52.85dBm. The optimum design of transceiver module for solid-state pulse compression radar which is presented in this dissertation, it can be available to miniaturize and to improve the radar performances through additional research for digital radar from now on.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.7 no.1
• /
• pp.53-60
• /
• 1996

The 8W hybrid MIC SSPA has been developed in the frequency range from 14.0 GHz to 14.5 GHz for uplink of KOREASAT's earth station. The whole system was designed of two parts with driving amplifier and high power amplifier to simplify the fabrication process. we reduced weight and volum of power amplifier through arranging the bias circuits in the same housing. The realized SSPA has a small signal gain of $26\pm1dB$within 500 MHz bandwidith, and the input and output return losses are over 7dB and 12dB respectively. The output power of 39.0 ~ 39.2dBm is achieved at the 1dB gain compression point of 14 GHz, 14.25 GHz, and 14.5 GHz. That reveals higher power than 8W of design target. The proposed SSPA manufacture techni- ques in this paper can be applied to the implementation of power amplifiers for some radars and SCPC.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.7 no.1
• /
• pp.1-7
• /
• 2012

In this paper, An X-band solid state power amplifier(SSPA) for pulse compressed microwave signal with 60Watt power and power added efficiency(PAE) above 30% is described. Designed 60Watt high power amplifier(HPA) was implemented by cascade coupled amplifiers, and it is consisted on three stage drive amplifiers with internally matched GaAs FET and one stage main power amplifier with an internally matched GaN HEMT. The designed SSPA has performance with more than total power gain 37dB and output power 48dBm(60-W) in condition of frequency range $9.41{\pm}0.03GHz$, pulse period width under 1ms and duty cycle under 10%. The implemented SSPA can apply to high quality digital marine radar applications with pulse compression technique.