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http://dx.doi.org/10.5515/KJKIEES.2009.20.1.001

High Stability and High Efficiency Power Amplifier with Switchable Damper for Plasma Applications  

Kim, Ji-Yeon (Department of Wireless Communications Engineering, Kwangwoon University)
Lee, Dong-Heon (Department of Wireless Communications Engineering, Kwangwoon University)
Chun, Sang-Hyun (Department of Wireless Communications Engineering, Kwangwoon University)
Yoo, Ho-Joon (Department of Wireless Communications Engineering, Kwangwoon University)
Kim, Jong-Heon (Department of Wireless Communications Engineering, Kwangwoon University)
Publication Information
Abstract
In this paper, a new 1 kW power amplifier with high efficiency and high stability in a RF generator is designed and fabricated for plasma applications. The efficiency of power amplifier is improved by using class-E amplifier that consists of one push-pull MOSFET and high current drive IC instead of class-C amplifier composed of several single ended MOSFET. Switchable damper that allows selecting three different modes of amplifiers for considering efficiency and stability is added into the amplifier for plasma applications. Stable region of an early electronic discharge section is extended to VSWR of 4.5:1 compared to conventional VSWR of 3.8:1 through using switchable damper. The dimension of the amplifier is also reduced to 30 % of conventional amplifier. The 80 % efficiency of power amplifier with switchable damper is obtained the output power of 1 kW in operating frequency of 13.56 MHz. In comparison of conventional power amplifier for plasma applications, 13 % efficiency is improved.
Keywords
High Efficiency; Class E; High Stability; Switchable Damper; Plasma Application;
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