• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.130-131
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• 2003

The magnetic and thermal properties of NiFe/IrMn/CoFe with Mn additions have been studied. As grown CoFe pinned-layers with IrMn-Mn have dominantly larger exchange biasing field( $H_{ex}$) and blocking temperature( $T_{b}$) than when pure I $r_{22}$M $n_{78}$ is used. The magnetic properties improve, $H_{ex}$ and $T_{b}$ improve with 77-78 vol% Mn, but drop considerably with more Mn additions, losing magnetic properties of theb NiFe/IrMn/CoFe with addition 0.6 vol % Mn. The average x-ray diffraction peak ratios fcc (111)CoFe of (111)IrM $n_3$ textures for the Mn inserted total vol of 75, 77, and 79 vol% were about 1.4, 0.8, and 0.6, respectively. For the sample without Mn inserted layer, the $H_{ex}$ between I $r_{22}$M $n_{78}$ and CoFe layers is almost nothing. For two multilayer as-grown samples with ultra-thin Mn layers of 77 vol % and 79 vol %, the $H_{ex}$s are 250 Oe and 150 Oe, respectively. In case of IrMn with 77.5 vol% Mn, the $H_{ex}$ was 444 Oe up to 30$0^{\circ}C$ endured of 363 Oe at 40$0^{\circ}C$, respectively. Mn additions improve the magnetic properties and thermal stabilities of NiFe/IrMn/CoFe. Those increase the $H_{ex}$ and $T_{b}$. In applications where higher $H_{ex}$ and $T_{b}$ are accept, proper concentrations of Mn can be used.n can be used.be used.

• Journal of the Korean Magnetics Society
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• v.13 no.4
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• pp.176-181
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• 2003

The magnetic domain walls at the edges of a large patterned and exchanged-biased NiO(10-60 nm)/NiFe(10 nm) bilayers and their motions with applied field were investigated by magnetic force microscopy. Three kinds of domain walls, namely, head-to-head zig-zag and tail-to-tail zig-zag Bloch walls and straight Neel walls were found at specific edges of the unidirectional biased NiO(30 nm)/NiFe(10 nm) bilayer having the exchange biasing field (H$\sub$ex/) of 21 Oe. No walls were observed for the strong exchange-biased bilayer (60 nm NiO, H$\sub$ex/ = 75 Oe), while the amplitude of the zig-zag domain increased with decreasing exchange biasing. This may be explained by mutual restraint between H$\sub$ex/ and the demagnetization field of edge. We similarly investigated the magnetization reversal process, the subsequent motion of the walls and identified the pinning and nucleation sites during reversal.

• Journal of the Korean Magnetics Society
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• v.13 no.2
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• pp.53-58
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• 2003

Annealing effects of exchange bias fields ($H_{2ex}$(top), $H_{lex}$ (bottom)) on composite type NiFe/[FeMn/Mn]$_{80}$/NiFe multilayers have been studied. Three samples with ultra-thin Mn inserted layers on glass/Ta(50 $\AA$)/NiFe(150 $\AA$)/[F $e_{53}$M $n_{47}$(1.25 $\AA$)/Mn(0 $\AA$, 0.11 $\AA$, 0.3 $\AA$)]$_{80}$/NiFe(90 $\AA$)/Ta(50 $\AA$) were prepared by ion beam sputtering. The average x-ray diffraction peak ratios NiFe(111) of FeMn (111) fcc textures for the Mn inserted total thicknesses of 0 $\AA$, 9 $\AA$, and 24 $\AA$ were about 0.65, 0.90, and 1.5, respectively. For the sample without Mn inserted layer, the $H_{2ex}$ of 260 Oe up to 300 $^{\circ}C$ disappeared at 350 $^{\circ}C$. For two multilayer samples with ultra-thin Mn layers of 0.11 $\AA$ and 0.3 $\AA$, the $H_{2exs}$ of 310 Oe and 180 Oe up to 300 $^{\circ}C$ endured of 215 Oe and 180 Oe at 350 $^{\circ}C$, respectively. The $H_{ex}$ (bottom)s of three samples decreased from 100 Oe to 70 Oe up to 250 $^{\circ}C$, while these values increased beyond 300 $^{\circ}C$. This observation can be attributed to less diffusive path of Mn atoms in bottom NiFe than top NiFe layer. The top and bottom coercive fields slightly varied about 5 Oe∼10 Oe. From these results, we could obtain the enhancement of exchange coupling intensity and thermal stability by an ultra-thin Mn inserted layer on NiFe/[FeMn/Mn]$_{80}$/NiFe Multilayers.

• Proceedings of the Korean Magnestics Society Conference
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• 1998.05a
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• pp.44-45
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• 1998

• Journal of the Korean Magnetics Society
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• v.12 no.4
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• pp.132-136
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• 2002

Enhancement of crystallinity and exchange bias characteristics for NiFe/FeMn/NiFe trilayer with Si buffer layer fabricated by ion-beam deposition were examined. A Si buffer layer promoted (111) texture of fcc crystallities in the initial growth region of NiFe layer deposited on it. FeMn layers deposited on Si/NiFe bilayer exhibited excellent (111) crystal texture. The antiferromagnetic FeMn layer between top and bottom NiFe films with the buffer Si 50 ${\AA}$-thick induced a large exchange coupling field Hex with a different dependence. It was found that H$\sub$ex/ of the bottom and top NiFe films with Si buffer layer revealed large value of about 110 Oe and 300 Oe, respectively. In the comparison of two Ta and Si buffer layers, the NiFe/FeMn/NiFe trilayer with Si could possess larger exchange coupling field and higher crystallinity.

• Journal of the Korean Magnetics Society
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• v.25 no.4
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• pp.117-122
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• 2015

The holes with a diameter of $35{\mu}m$ inside the GMR-SV (giant magnetoresistance-spin valve) film were patterned by using the photolithography process and ECR (electron cyclotron resonance) Ar-ion milling. From the magnetoresistance curves of the GMR-SV film with holes measuring by 4-electrode method, the MR (magnetoresistance ratio) and MS (magnetic sensitivity) are almost same as the values of initial states. On other side hand, the $H_{ex}$ (exchange bias coupling field) and $H_c$ (coercivity) dominantly increased from 120 Oe and 10 Oe to 190 Oe and 41 Oe as increment of the number of holes inside GMR-SV film respectively. These results were shown to be attributed to major effect of EMD (easy magnetic domian) having a region positioned between two holes perpendicular to the sensing current. On the basis of this study, the fabrication of GMR-SV applying to the hole formation improved the magnetoresistance properties having the thermal stability and durability of bio-device.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.203-209
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• 2000

Top synthetic spin valves with structure Ta/NiFe/CoFe/Cu/CoFe(P 1)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with natural oxide were prepared by dc magnetron sputtering system. We have changed only the thickness in free layers and the thickness difference (Pl-P2) in two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on interlayer coupling field in spin valve with synthetic antiferromagnet. According to the decrease of free layer thickness, interlayer coupling field was increased due to the magnetostatic coupling(orange peel coupling). In case of t$\_$P1/>t$\^$P2/, interlayer coupling field agreed well with the modified Neel model suggested in conventional spin valve structures by Kools et al. However, in case of t$\_$P1/>t$\^$P2/, it was found that the interlayer coupling field was not explained by the Modified Neel Model and was confirmed the necessity of further remodeling. The dependence of Cu thickness on the interlayer coupling field was investigated and 10 Oe of interlayer coupling field was obtained when the Cu thickness is 32 $\AA$.

• Journal of the Korean Magnetics Society
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• v.27 no.3
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• pp.82-86
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• 2017

The IrMn based GMR-SV films with three different buffer layers were prepared on Corning glass by using ion beam deposition and DC magnetron sputtering method. The major and minor magnetoresistance curves for three different buffer layers beneath the structure of NiFe(15 nm)/CoFe(5 nm)/Cu(2.5 nm)/CoFe(5 nm)/NiFe(7 nm)/IrMn(10 nm)/Ta(5 nm) at room temperature have shown different magnetoresistance properties. When the samples were annealed at $250^{\circ}C$ in vacuum, the magnetoresistance ratio, the coercivity of pinned ferromagnetic layer, and the interlayer coupling field of free ferromagnetic layer were enhanced while the exchange bias coupling field did not show noticeable changes.

• Journal of the Korean Magnetics Society
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• v.12 no.1
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• pp.24-29
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• 2002

It was observed that exchange bias field was increased with smooth surface and better ${\gamma}$-FeMn formation. Sputtering conditions were varied for the control of the surface roughness and ${\gamma}$-FeMn formation. From the results of Cu deposition as underlayer, it was found that ${\gamma}$-FeMn formation was closely related with the thickness of underlayer. After heat treatment, exchange bias field was increased over three times. This improvement was likely that the crystallites of ${\gamma}$-FeMn were well formed. In Co/Cu/Co/FeMn spin valve structure, magnetoresistance was increased over 1.4 times through the heat treatment. This was due to the disappearance of Co/Cu intermixed dead layer and removal of defect, and this was examined by AES analysis.

• Journal of the Korean Magnetics Society
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• v.27 no.3
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• pp.77-81
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• 2017

The rotatable anisotropy effect was observed in the ferromagnetic resonance measurement in exchange coupled ferromagnetic/antiferromagnetic thin films and it was due to rotation of antiferromagnetic layer by the exchange coupling energy. We analyzed the CoFe thickness dependence of rotatable anisotropy field and ferromagnetic resonance linewidth in exchange coupled $CoFe(t_F)/MnIr(2.5nm)$ thin films. The rotatable anisotropy field was inversely propositional to the CoFe thickness and it was well fitted by the rotatable anisotropy energy of $0.96erg/cm^2$. The ferromagnetic resonance linewidth were linearly propositional to the rotatable anisotropy field in $t_F$ < 50 nm, while it was more dominated by the eddy current effect in $t_F$ > 50 nm.