• Title/Summary/Keyword: 경화 공정

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Low-voltage Pentacene Field-Effect Transistors Based on P(S-r-BCB-r-MMA) Gate Dielectrics (P(S-r-BCB-r-MMA) 게이트 절연체를 이용한 저전압 구동용 펜타센 유기박막트랜지스터)

  • Koo, Song Hee;Russell, Thomas P.;Hawker, Craig J.;Ryu, Du Yeol;Lee, Hwa Sung;Cho, Jeong Ho
    • Applied Chemistry for Engineering
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    • v.22 no.5
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    • pp.551-554
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    • 2011
  • One of the key issues in the research of organic field-effect transistors (OFETs) is the low-voltage operation. To address this issue, we synthesized poly(styrene-r-benzocyclobutene-r-methyl methacrylate) (P(S-r-BCB-r-MMA)) as a thermally cross-linkable gate dielectrics. The P(S-r-BCB-r-MMA) showed high quality dielectric properties due to the negligible volume change during the cross-linking. The pentacene FETs based on the 34 nm-thick P(S-r-BCB-r-MMA) gate dielectrics operate below 5 V. The P(S-r-BCB-r-MMA) gate dielectrics yielded high device performance, i.e. a field-effect mobility of $0.25cm^2/Vs$, a threshold voltage of -2 V, an sub-threshold slope of 400 mV/decade, and an on/off current ratio of ${\sim}10^5$. The thermally cross-linkable P(S-r-BCB-r-MMA) will provide an attractive candidate for solution-processable gate dielectrics for low-voltage OFETs.

Preparation and Application of Rehmannia Glutinosa Extract Incorporated Functional Chitosan Based Biomaterials (지황 추출물 첨가 chitosan 기반 기능성 바이오 소재 제조 및 응용)

  • Lee, Si-Yeon;Kim, Kyeong-Jung;Kim, Youn-Sop;Yoon, Soon-Do
    • Applied Chemistry for Engineering
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    • v.33 no.2
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    • pp.195-201
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    • 2022
  • The main objective of this work is to prepare Rehmannia glutinosa extract (RE) incorporated functional chitosan (CH) based biomaterials and evaluate their physical properties, RE release properties, inhibitory effect of melanogenesis, and antioxidant and elastase inhibitory activities. RE incorporated CH based biomaterials were synthesized by a casting method and UV curing process. The surface and cross sections of prepared biomaterials were characterized by a field emission scanning electron microscope (FE-SEM). The physical properties such as tensile strength and elongation at break were also investigated. To apply the transdermal drug delivery system, RE release properties were examined with pH 4.5, 5.5, and 6.5 buffer solutions and artificial skin test at 36.5 ℃. Results indicated that RE release of RE incorporated biomaterials with/without the addition of plasticizers [glycerol (GL) and citric acid (CA)] at pH 6.5 was about 1.10 times higher than that of at pH 4.5. In addition, results of the artificial skin test verified that RE was released constantly for 6 h. To verify the applicability of the prepared biomaterials, tyrosinase, 2,2-diphenyl-1-picrylhydrazyl (DPPH), and elastase assays were investigated. Results indicated that RE incorporated biomaterials added CA exhibited tyrosinase activation, DPPH radical scavenging activity rate, and elastase activation of 45.12, 89.40, and 59.94%, respectively.

Low temperature growth of Ga2O3 thin films on Si substrates by MOCVD and their electrical characteristics (MOCVD에 의한 Si 기판 위의 Ga2O3 박막 저온 결정 성장과 전기적 특성)

  • Lee, Jung Bok;Ahn, Nam Jun;Ahn, Hyung Soo;Kim, Kyung Hwa;Yang, Min
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.32 no.2
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    • pp.45-50
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    • 2022
  • Ga2O3 thin films were grown on n-type Si substrates at various growth temperatures of 500, 550, 600, 650 and 700℃. The Ga2O3 thin films grown at 500℃ and 550℃ were characterized as featureless flat surface. Grown at higher temperatures (600, 650, and 700℃) showed very rough surface morphology. To figure out the annealing effect on the thin films grown at relatively low temperatures (500, 550, 600, 650 and 700℃), the Ga2O3 films were thermally treated at 900℃ for 10 minutes. Crystal structure of the Ga2O3 films grown at 500 and 550℃ were changed from amorphous to polycrystalline structure with flat surface. Ga2O3 film grown at 550℃ was chosen for the fabrication of a Schottky barrier diode (SBD). Electrical properties of the SBDs depend on the thermal treatment were evaluated. A MSM type photodetector was made on the low temperature grown Ga2O3 thin film. The photocurrent for the illumination of 266 nm wavelength showed 5.32 times higher than dark current at the operating voltage of 10 V.

Reviews on Post-synthetic Modification of Metal-Organic Frameworks Membranes (다결정 금속 유기 골격체 분리막의 후처리 성능 제어기술 개발 동향)

  • Hyuk Taek, Kwon;Kiwon, Eum
    • Membrane Journal
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    • v.32 no.6
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    • pp.367-382
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    • 2022
  • Numerous metal-organic frameworks (MOFs) produced by periodic combinations of organic ligands and metal ions or metal-oxo clusters have led the way for the creation of energy-efficient membrane-based separations that may serve as viable replacements for traditional thermal counterparts. Although tremendous progress has been made over the past decade in the synthesis of polycrystalline MOF membranes, only a small number of MOFs have been exploited in the relevant research. Intercrystalline defects, or nonselective diffusion routes in polycrystalline membranes, are likely the reason behind the delay. Postsynthetic modifications (PSMs) are newly emerging strategies for providing polycrystalline MOF membrane diversity by leveraging advanced membranes as a platform and improving their separation capabilities via physical and/or chemical treatments; therefore, neither designing and developing MOFs nor tailoring membrane synthesis techniques for focused MOFs is necessary. In this minireview, seven subclasses of PSM techniques that have recently been adapted to polycrystalline MOF membranes are outlined, along with obstacles and future directions.