• 한국분말재료학회지
• /
• 제16권1호
• /
• pp.28-32
• /
• 2009

The activation temperatures and hydrogen sorption rates of $Ti_{80-X}Zr_{20}V_X$ alloys were evaluated at room temperature. The alloy powders were prepared by arc melting and then hydride-dehydride(HDH) process. The alloy powders were apt to activate by increase of vanadium in Ti-Zr-V alloys. The easy activation was explained in terms of surface oxygen content which decreased with increase of vanadium on Ti-Zr-V alloys.

• 한국분말재료학회지
• /
• 제12권6호
• /
• pp.433-440
• /
• 2005

The hydrogen sorption speed of $Zr_{57}V_{36}Fe_7$ nanocrystalline and amorphous alloys was evaluated at room temperature. Nanocrystalline alloys of $Zr_{57}V_{36}Fe_7$ were prepared by planetary ball milling. The hydrogen sorption speed of nanocrystalline alloys was higher than that of the amorphous alloy. The enhanced sorption speed of nanocrystalline alloys was explained in terms of surface oxygen stability which has been known to retard the activation of amorphous alloys. The retardation can be reduced by formation of nanocrystals, which results in the observed increase in sorption properties.

• 한국재료학회지
• /
• 제15권2호
• /
• pp.79-84
• /
• 2005

The lowest activation temperature of a commercial vacuum getter reported so far in literature was about $400^{\circ}C$. Recently, $Ti_{0.3}Zr_{0.2}V_{0.5}$ alloy has been reported to exhibit the activation temperature lower than $200^{\circ}C$ when they are prepared as thin film. In this study, the alloy was prepared as bulk form and its activation temperature and hydrogen sorption properties were investigated in compliance with a standard method. The alloy powder was prepared by arc melting and subsequent HDH(Hydride-DeHydride) process. The activation temperature of the alloy was estimated from the ultimate pressure-temperature curve and located between $150^{\circ}C\;and\;200^{\circ}C$. The hydrogen sorption speed measured by an orifice method was 0.895 liter/sec which is comparable to thin film of same composition.

• 한국수소및신에너지학회논문집
• /
• 제15권3호
• /
• pp.220-227
• /
• 2004

The purpose of this paper is, based on the theoretical background of the principle of gas purification and absorption, and the absorbing ability of metals, to syudy the efficiency of gas purification of inorganic gases using Zr alloys, so as to contribute to the IT industry. To produce and distribute gas with high purity and ultra-high purity, different types of gas purifier are currently being used: distillation type, getter type, catalyst type, absorption at low-temperature type, and membrane separation equipment. From the different purification methods mentioned above, the getter type gas purifier is capable of not only high performance and capacity but also P.O.U(Point Of Use) method. The key of the getter type gas purifier is its efficiency of gas purification, which is the subject chosen for this study.

• 한국재료학회지
• /
• 제15권6호
• /
• pp.388-392
• /
• 2005

The $Zr_{57}V_{36}M_7$ getter alloy was prepared by Fe substituting Ga or Y for Fe on $Zr_{57}V_{36}M_7$ getter alloy(St707), and the activation temperatures and the hydrogen a sorption speeds of these alloys were investigated. The activation temperatures of these alloys were estimated from the ultimate pressure-temperature curve and lowered about $100\~200\;K$ compared to $Zr_{57}V_{36}M_7$, fetter alloy(St707). However, final pressures at fully activated temperature were increased with substitution of Fe by Ga and Y on $Zr_{57}V_{36}M_7$ getter alloy. The hydrogen sorption speeds of these alloys measured by an orifice method were decreased about $0.460\~0.586liter/sec$ g compared to $Zr_{57}V_{36}M_7$ getter alloy.

• 한국분말재료학회지
• /
• 제14권1호
• /
• pp.56-62
• /
• 2007

Getter property of nano-sized metallic powders was evaluated as a possible candidate for the future getter material. For the purpose, Ti powders of about 50 nm were prepared by electrical wire explosion. Commercial Ti powders of about 22 micrometer were tested as well for comparison. The room-temperature hydrogen-sorption speed of nano-sized Ti powders was $1.34\;L/sec{\cdot}cm^{2}$ which was more than 4 times higher than that of micron-sized ones. The value is comparable to or even higher than those of commercial products. Its sorption speed increases with activation temperature up to $500^{\circ}C$ above which it deteriorates due to low-temperature sintering effect of nano-sized particles.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2009년도 추계학술대회 논문집
• /
• pp.366-366
• /
• 2009

후면접합 태양전지는 상용 태양전지의 수평전류 손실(lateral current loss) 이 없으며, 전면전극에 의해 발생하는 그림자 손실(shading loss) 줄인 고효율 태양전지의 하나이다. 생성된 반송자가 후면에 위치한 전극에서 수집되기 때문에 효율향상을 위해서는 불순물에 의한 재결합을 줄이는 것이 중요하다. 따라서 Gettering 은 높은 소수반송자 수명(life-time)을 가지는 고품위 실리콘 기판은 고효율 실리콘태양전지 제작을 위한 중요 요소 기술이다. 본 연구에서는 n-type c-Si 기판을 이용한 고효율 실리콘 이종접합 태양전지제작을 위해 external gettering 공정을 이용하여 고품위 실리콘 기판을 제작하였다. POC13 doping process 의 온도, 시간을 변화시킴으로써 이에 따른 변화를 관찰하였다. 주사전자현미경(SEM)를 통해 etch pit 을 확인 했으며,Four point probe 를 통해 면저항을 측정, 인(P)의 농도를 계산 하였다. 계산된 면저항을 통해 인(P)의 확산 깊이를 계산하였다. Iodine passivation 된 시편을 Qusi-steady state photoconductance (QSSPC)를 이용하여 소수반송자 수명을 측정함으로써 gettering 에 의한 bulk lifetime 향상 효과를 관찰하였다.

• 한국재료학회지
• /
• 제16권2호
• /
• pp.116-122
• /
• 2006

The effects of milling time in argon and hydrogen atmospheres on the hydrogen sorption speed of a getter alloy, $Zr_{57}V_{36}Fe_{7}$, was studied. The hydrogen sorption speed of milled alloys was evaluated at room temperature. In argon, as the oxygen content increased with milling time, the hydrogen sorption speed decreased accordingly. In hydrogen, on the other hand, the oxygen content decreased at first with milling time but started increasing after 5 hrs of milling time. Similar to the case of argon, however, the hydrogen sorption speed changed exactly in the opposite direction with the oxygen content, exhibiting the maximum rate at 5 hrs. These results suggest that in both atmospheres the hydrogen sorption speeds are inversely related with the oxygen contents.

• 한국표면공학회지
• /
• 제49권5호
• /
• pp.467-471
• /
• 2016

In order to investigate the Na gettering, PSG/$SiO_2$/Al-1%Si multilevel thin films were fabricated. DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and PSG/$SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling and XPS (X-ray Photoelectron Spectroscopy) analysis were used to determine the distribution and binding energies of Na, Al, Si, O, P and other elements throughout the PSG/$SiO_2$/Al-1%Si multilevel thin films. Na peaks were mainly observed at the the PSG/$SiO_2$ interface and at the $SiO_2$/Al-1%Si interfaces. Na impurity gettering in PSG/$SiO_2$/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and O elements in PSG passivation appears to be $SiO_2$.

• 한국재료학회지
• /
• 제15권12호
• /
• pp.802-808
• /
• 2005

The hydrogen sorption speeds of $Zr_{57}V_{36}Fe_7$ amorphous alloy and its crystallized alloys were evaluated at room temperature $Zr_{57}V_{36}Fe_7$ amorphous alloy was prepared by ball milling. The amorphous alloy was crystallized through two stages. Initially, $\alpha-Zr$ solid solution was appeared from the amorphous phase. Two cubic Laves compounds were precipitated afterwards from the remained amorphous and from excessively saturated solid solution at higher temperature. The hydrogen sorption speed of the partially crystallized alloy was higher than that of amorphous. The enhanced sorption speed of partially crystallized alloy was explained in terms of surface oxygen stability which has been known to retard the activation of amorphous alloys. The retardation could be reduce by crystallization process resulting in the observed increase in sorption property.