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http://dx.doi.org/10.5695/JKISE.2016.49.5.467

Analysis of the Na Gettering in PSG/SiO2/Al-1%Si Multilevel Thin Films using XPS and SIMS  

Kim, Jin Young (Department of Electronic Materials Engineering, Kwangwoon University)
Publication Information
Journal of the Korean institute of surface engineering / v.49, no.5, 2016 , pp. 467-471 More about this Journal
Abstract
In order to investigate the Na gettering, PSG/$SiO_2$/Al-1%Si multilevel thin films were fabricated. DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and PSG/$SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling and XPS (X-ray Photoelectron Spectroscopy) analysis were used to determine the distribution and binding energies of Na, Al, Si, O, P and other elements throughout the PSG/$SiO_2$/Al-1%Si multilevel thin films. Na peaks were mainly observed at the the PSG/$SiO_2$ interface and at the $SiO_2$/Al-1%Si interfaces. Na impurity gettering in PSG/$SiO_2$/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and O elements in PSG passivation appears to be $SiO_2$.
Keywords
Na; Segregation gettering; PSG; SIMS; XPS;
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Times Cited By KSCI : 2  (Citation Analysis)
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